PHOTOLITHOGRAPHY METHOD AND DEVICE
    1.
    发明申请
    PHOTOLITHOGRAPHY METHOD AND DEVICE 审中-公开
    光刻方法和装置

    公开(公告)号:US20110255064A1

    公开(公告)日:2011-10-20

    申请号:US13085857

    申请日:2011-04-13

    IPC分类号: G03B27/42

    CPC分类号: G03F7/70291

    摘要: A photolithography method includes projecting a light beam through a mask onto a photosensitive layer to form on the photosensitive layer an image of a mask pattern formed by the mask, and controlling a layer of active elements of the mask so that the light beam after having traversed the layer of active elements, reproduces the mask pattern onto the photosensitive layer. The active elements are distributed throughout the layer of active elements in conformance with a matrical organization of lines and columns, each active element being individually controllable to take a state transparent to the light of the light beam, or else a state opaque to or reflecting of the light of the light beam, as a function of a command signal supplied to the active element.

    摘要翻译: 光刻方法包括将光束通过掩模投影到感光层上以在感光层上形成由掩模形成的掩模图案的图像,并且控制掩模的有源元件层,使得光线穿过之后 有源元件层将掩模图案再现到感光层上。 有源元件分布在整个有源元件层上,符合线和列的矩阵组织,每个有源元件可独立控制,以对光束的光透明,或不透明或反射的状态 作为提供给有源元件的命令信号的函数的光束的光。