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公开(公告)号:US08865592B2
公开(公告)日:2014-10-21
申请号:US12364804
申请日:2009-02-03
申请人: Jiang Yan , Henning Haffner , Frank Huebinger , SunOo Kim , Richard Lindsay , Klaus Schruefer
发明人: Jiang Yan , Henning Haffner , Frank Huebinger , SunOo Kim , Richard Lindsay , Klaus Schruefer
IPC分类号: H01L21/44 , H01L23/525 , H01L21/28 , H01L29/49
CPC分类号: H01L27/0617 , H01L21/28088 , H01L23/5256 , H01L29/0653 , H01L29/4958 , H01L29/4966 , H01L2924/0002 , H01L2924/00
摘要: A preferred embodiment includes a method of manufacturing a fuse element that includes forming a polysilicon layer over a semiconductor structure, doping the polysilicon layer with carbon or nitrogen, depositing a metal over the polysilicon layer; and annealing the metal and polysilicon layer to form a silicide in an upper portion of the polysilicon layer.
摘要翻译: 优选实施例包括制造熔丝元件的方法,该方法包括在半导体结构上形成多晶硅层,用碳或氮掺杂多晶硅层,在多晶硅层上沉积金属; 以及退火所述金属和多晶硅层以在所述多晶硅层的上部形成硅化物。
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公开(公告)号:US20100193867A1
公开(公告)日:2010-08-05
申请号:US12364804
申请日:2009-02-03
申请人: Jiang Yan , Henning Haffiner , Frank Huebinger , SunOo Kim , Richard Lindsay , Klaus Schruefer
发明人: Jiang Yan , Henning Haffiner , Frank Huebinger , SunOo Kim , Richard Lindsay , Klaus Schruefer
CPC分类号: H01L27/0617 , H01L21/28088 , H01L23/5256 , H01L29/0653 , H01L29/4958 , H01L29/4966 , H01L2924/0002 , H01L2924/00
摘要: A preferred embodiment includes a method of manufacturing a fuse element that includes forming a polysilicon layer over a semiconductor structure, doping the polysilicon layer with carbon or nitrogen, depositing a metal over the polysilicon layer; and annealing the metal and polysilicon layer to form a silicide in an upper portion of the polysilicon layer.
摘要翻译: 优选实施例包括制造熔丝元件的方法,该方法包括在半导体结构上形成多晶硅层,用碳或氮掺杂多晶硅层,在多晶硅层上沉积金属; 以及退火所述金属和多晶硅层以在所述多晶硅层的上部形成硅化物。
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