公开(公告)号：US20100084687A1

公开(公告)日：2010-04-08

申请号：US12558242

申请日：2009-09-11

申请人： Jing Chen ,  Maojun Wang

发明人： Jing Chen ,  Maojun Wang

IPC分类号： H01L29/778 ,  H01L21/335

CPC分类号： H01L29/207 ,  H01L29/2003 ,  H01L29/66462 ,  H01L29/7783 ,  H01L29/7788

摘要： Structures, devices and methods are provided for creating enhanced back barriers that improve the off-state breakdown and blocking characteristics in aluminum gallium nitride AlGaN/GaN high electron mobility transistors (HEMTs). In one aspect, selective fluorine ion implantation is employed when developing HEMTs to create the enhanced back barrier structures. By creating higher energy barriers at the back of the two-dimensional electron gas channel in the unintentionally doped GaN buffer, higher off-state breakdown voltage is advantageously provided and blocking capability is enhanced, while allowing for convenient and cost-effective post-epitaxial growth fabrication. Further non-limiting embodiments are provided that illustrate the advantages and flexibility of the disclosed structures.

摘要翻译： 提供了结构，装置和方法，用于产生改进的氮化镓铝AlGaN / GaN高电子迁移率晶体管（HEMT）中的截止状态击穿和阻挡特性的增强后阻挡层。 在一个方面，当开发HEMT以产生增强的背景屏障结构时，采用选择性氟离子注入。 通过在无意掺杂的GaN缓冲器中在二维电子气体通道的背面产生更高的能量势垒，有利地提供更高的截止击穿电压，并且提高了阻挡能力，同时允许方便且具有成本效益的外延生长 制造。 提供了另外的非限制性实施例，其示出了所公开的结构的优点和灵活性。