公开(公告)号：US11444212B2

公开(公告)日：2022-09-13

申请号：US17055370

申请日：2019-06-21

Applicant: JingAo Solar CO., LTD.

Inventor： Xiaoye Chen ,  Wenjuan Xue ,  Xiulin Jiang ,  Haipeng Yin

IPC: H01L31/0216 ,  H01L31/0224 ,  H01L31/0368 ,  H01L31/068

Abstract: A crystalline silicon solar cell includes a gallium oxide layer in direct contact with a P-type silicon layer in the crystalline silicon solar cell. The gallium oxide layer is arranged on the P-type silicon layer of the crystalline silicon solar cell, negative charges of the gallium oxide layer are used to carry out chemical passivation and field passivation on a surface of the P-type silicon layer, and the number of dangling bonds and minority carriers of silicon atoms on the surface of the P-type silicon layer is reduced, so that a minority carrier recombination rate at the surface of the P-type silicon layer is reduced. In addition, the gallium oxide layer has a relatively wide band gap and an appropriate optical refractive index.