公开(公告)号：US20080173902A1

公开(公告)日：2008-07-24

申请号：US12015608

申请日：2008-01-17

申请人： Jiro MATSUDA ,  Masanori Nagase ,  Shu Takahashi

发明人： Jiro MATSUDA ,  Masanori Nagase ,  Shu Takahashi

IPC分类号： H01L31/0216 ,  H01L21/339

CPC分类号： H01L27/14812 ,  H01L29/66954 ,  H01L29/76833

摘要： A solid state imaging apparatus comprises: a semiconductor substrate; a photoelectric converting portion on the semiconductor substrate; a light shielding film in a region excluding a light receiving surface of the photoelectric converting portion; and a P-type impurity layer between a lower surface of the light shielding film and the semiconductor substrate.

摘要翻译： 固态成像装置包括：半导体衬底; 半导体基板上的光电转换部; 在除光电转换部的受光面以外的区域中的遮光膜; 以及在遮光膜的下表面和半导体衬底之间的P型杂质层。

公开(公告)号：US20130120808A1

公开(公告)日：2013-05-16

申请号：US13481175

申请日：2012-05-25

申请人： Hirokazu ICHIKAWA ,  Yoshiro YAMAGUCHI ,  Eigo NAKAGAWA ,  Jiro MATSUDA

发明人： Hirokazu ICHIKAWA ,  Yoshiro YAMAGUCHI ,  Eigo NAKAGAWA ,  Jiro MATSUDA

IPC分类号： H04N1/04

CPC分类号： H04N1/4076 ,  H04N1/02865 ,  H04N1/0312 ,  H04N1/12 ,  H04N1/193

摘要： A reading device includes a first illuminating section that illuminates a reading area with first illumination light of a first direction; a second illuminating section that illuminates the reading area with second illumination light of a second direction; a light-receiving section that receives reflection light of the first illumination light and reflection light of the second illumination light reflected from the reading area, the first illumination light being applied from the first illuminating section and the second illumination light being applied from the second illuminating section; and reflecting members that are disposed side by side in the reading area in a widthwise direction thereof, and that have first and second reflecting surfaces.

摘要翻译： 读取装置包括：第一照明部，其利用第一方向的第一照明光照亮读取区域; 第二照明部，其利用第二方向的第二照明光照亮所述读取区域; 受光部，其接收第一照明光的反射光和从读取区域反射的第二照明光的反射光，第一照明光从第一照明部施加，第二照明光从第二照明 部分; 以及在读取区域中沿其宽度方向并排布置并且具有第一和第二反射表面的反射构件。

公开(公告)号：US20100321552A1

公开(公告)日：2010-12-23

申请号：US12610620

申请日：2009-11-02

申请人： Jiro MATSUDA

发明人： Jiro MATSUDA

IPC分类号： H04N5/335

CPC分类号： H01L27/14825 ,  H01L27/14812

摘要： An image sensor includes: a charge generating unit that generates a charge in response to light, and has a potential well that stores the charge; a first charge storage unit the first charge storage unit having a potential well deeper than the potential well of the charge generating unit and storing a charge transferred from the charge generating unit; a first electrode covering an end of the charge generating unit, to which a voltage is applied, to form a gradient of a potential so that a charge stored in the charge generating unit is transferred to the first charge storage unit; and a second electrode covering a part of the charge generating unit, to which a voltage is applied to make a part of the potential well of the charge generating unit shallow, the shallow part corresponding to the part of the charge generating unit covered by the second electrode.

摘要翻译： 图像传感器包括：电荷产生单元，其响应于光而产生电荷，并且具有存储电荷的势阱; 第一电荷存储单元，所述第一电荷存储单元具有比所述电荷产生单元的势阱更深的电位并存储从所述电荷产生单元传送的电荷; 覆盖电荷产生单元的端部的第一电极，施加电压以形成电位梯度，使得存储在电荷产生单元中的电荷被转移到第一电荷存储单元; 以及覆盖所述电荷产生单元的一部分的第二电极，施加电压以使所述电荷产生单元的所述势阱的一部分较浅的所述浅电极对应于由所述电荷产生单元覆盖的所述电荷产生单元的部分 电极。