摘要:
The circuit provides one or several banks of capacitors, the capacitors in each bank being identical in size. A single fuse for each bank of capacitors controls the connection of the capacitors to a pulse-width-determining node on each of the ATD (address-transition-detect) pulse generators of the SRAM device. Depending on the position of the fuse in the circuit, the blowing of a single fuse can either add to the capacitance at the ATD nodes or substract from it. Thus the pulse-width of all ATD pulse generators can be adjusted shorter or longer simultaneously by blowing a single fuse only.
摘要:
One aspect of the present invention concerns a method for controlling the frequency of oscillation of a local clock signal comprising the steps of (A) generating the clock signal in response to a first control signal, (B) generating the first control signal in response to one of a plurality of adjustment signals selected in response to a second control signal and (C) generating the second control signal in response to a comparison between a local timestamp and an external timestamp.
摘要:
An apparatus comprising a buffer circuit, a rotation circuit and a memory. The buffer may be configured to store original image data in one or more sub-matrices. The rotation circuit may be configured to (i) produce rotated data and (ii) store the rotated data in a transposed matrix. The memory may be configured to position the rotated data in the transposed matrix. The transposed matrix comprises final image data rotated by a predetermined angle from the original image data.
摘要:
An apparatus comprising (i) a first circuit configured to generate one or more node signals at one or more internal nodes and (ii) a second circuit configured to present one or more of the node signals and a trigger signal in response to one or more control signals.
摘要:
An apparatus comprising a first circuit and a second circuit. The first circuit may be configured to transfer data between a plurality of first ports and a second port via a single port memory in response to one or more control signals. The second circuit may be configured to generate the one or more control signals, wherein the memory is time shared among the second port and the plurality of first ports.
摘要:
A system and method for effectively implementing a high-speed DRAM device may include memory cells that each have a bitline for transferring storage data, a wordline for enabling an accelerated-write operation in the memory cell, and a data storage node with a corresponding cell voltage. An accelerated-write circuit may then directly provide the storage data to an appropriate bitline in a pre-toggled state in response to one or more accelerated-write enable signals. The corresponding cell voltage may therefore begin a state-change transition towards the pre-toggled state immediately after the wordline is activated to successfully reach a full-state level before the wordline is deactivated during a high-speed memory cycle.
摘要:
An apparatus comprising a buffer circuit, a rotation circuit and a memory. The buffer may be configured to store original image data in one or more sub-matrices. The rotation circuit may be configured to (i) produce rotated data and (ii) store the rotated data in a transposed matrix. The memory may be configured to position the rotated data in the transposed matrix. The transposed matrix comprises final image data rotated by a predetermined angle from the original image data.
摘要:
One aspect of the present invention concerns a method for controlling the frequency of oscillation of a local clock signal comprising the steps of (A) generating the clock signal in response to a first control signal, (B) generating the first control signal in response to one of a plurality of adjustment signals selected in response to a second control signal and (C) generating the second control signal in response to a comparison between a local timestamp and an external timestamp.