公开(公告)号：US08728233B2

公开(公告)日：2014-05-20

申请号：US11664369

申请日：2005-10-04

申请人： Jochen Friedrich ,  Georg Müller ,  Rainer Apelt ,  Elke Meissner ,  Bernhard Birkmann ,  Stephan Hussy

发明人： Jochen Friedrich ,  Georg Müller ,  Rainer Apelt ,  Elke Meissner ,  Bernhard Birkmann ,  Stephan Hussy

IPC分类号： C30B11/00

CPC分类号： C30B29/403 ,  C30B17/00 ,  C30B19/02

摘要： The present invention relates to a method for the production of crystal layers or bulk crystals of group III nitride or of mixtures of different group III nitrides by means of precipitation, at a first temperature T1 in a first temperature range, from a group-III containing fused metal on a group-III-nitride crystal seed placed in the fused metal or on a foreign substrate placed in the fused metal, with the admixture of nitrogen in the fused metal at a pressure P.With the method a solvent additive is added to the fused metal which increases the conversion rate of group III metal to group III nitride in the fused metal. The fused metal runs through at least one temperature cycle with a first and a second process phase in which cycle the fused metal cools after the first process phase from the first temperature to a second temperature T2 below the first temperature range and at the end of the second process phase is heated from the second temperature back to a temperature within the first temperature range. The described method permits producing group III nitride crystal layers with a thickness of >10 μm, respectively massive crystals with a diameter of >10 mm at dislocation densities of

摘要翻译： 本发明涉及通过在第一温度范围内的第一温度T1，从含III族氮化物的第III族氮化物的III族氮化物 将熔融金属放置在置于熔融金属中的第III族氮化物晶体种子上或置于熔融金属中的异质基底上，在熔融金属中以氮气的混合压力P。用该方法将溶剂添加剂 熔融金属，其增加熔融金属中III族金属与III族氮化物的转化率。 熔融金属穿过至少一个具有第一和第二工艺阶段的温度循环，其中熔融金属在第一工艺阶段之后从第一温度冷却到低于第一温度范围的第二温度T2， 第二工艺阶段从第二温度加热到第一温度范围内的温度。 所述方法允许在低于1100℃的温度下在≤108cm-2的位错密度下生产厚度>10μm的III族氮化物晶体层，分别为直径> 10mm的大块晶体，工艺压力低于5× 105 Pa

公开(公告)号：US20080118648A1

公开(公告)日：2008-05-22

申请号：US11664369

申请日：2005-10-04

申请人： Jochen Friedrich ,  Georg Muller ,  Rainer Apelt ,  Elke Meissner ,  Bernhard Birkmann ,  Stephan Hussy

发明人： Jochen Friedrich ,  Georg Muller ,  Rainer Apelt ,  Elke Meissner ,  Bernhard Birkmann ,  Stephan Hussy

IPC分类号： B05D3/02 ,  B05D3/04

CPC分类号： C30B29/403 ,  C30B17/00 ,  C30B19/02

摘要： The present invention relates to a method for the production of crystal layers or bulk crystals of group III nitride or of mixtures of different group III nitrides by means of precipitation, at a first temperature T1 in a first temperature range, from a group-III containing fused metal on a group-III-nitride crystal seed placed in the fused metal or on a foreign substrate placed in the fused metal, with the admixture of nitrogen in the fused metal at a pressure P.With the method a solvent additive is added to the fused metal which increases the conversion rate of group III metal to group III nitride in the fused metal. The fused metal runs through at least one temperature cycle with a first and a second process phase in which cycle the fused metal cools after the first process phase from the first temperature to a second temperature T2 below the first temperature range and at the end of the second process phase is heated from the second temperature back to a temperature within the first temperature range. The described method permits producing group III nitride crystal layers with a thickness of >10 μm, respectively massive crystals with a diameter of >10 mm at dislocation densities of

摘要翻译： 本发明涉及在第一温度T 1中通过沉淀生产III族氮化物或不同III族氮化物的混合物的晶体层或本体晶体的方法 范围，从放置在熔融金属中的III族氮化物晶体晶种上的第III族熔融金属或放置在熔融金属中的异质衬底上，在熔融金属中以氮气的混合压力P。 该方法将熔融金属中添加溶剂添加剂，这增加了熔融金属中III族金属与III族氮化物的转化率。 熔融金属在第一和第二工艺阶段中延伸至少一个温度循环，其中熔融金属在第一工艺阶段之后从第一温度冷却至低于第一工艺阶段的第二温度T <2> 温度范围和第二工艺阶段结束时从第二温度加热到第一温度范围内的温度。 所描述的方法允许生产厚度>10μm的III族氮化物晶体层，分别为<10 -8 cm -2的位错密度，直径> 10mm的大块晶体， SUP>在低于1100℃的温度下，处理压力低于5×10 5 Pa。