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    Method For The Production Of Group III Nitride Bulk Crystals Or Crystal Layers From Fused Metals
    1.
    发明申请
    Method For The Production Of Group III Nitride Bulk Crystals Or Crystal Layers From Fused Metals 有权
    用于生产熔融金属的III族氮化物体晶体或晶体层的方法

    公开(公告)号：US20080118648A1

    公开(公告)日：2008-05-22

    申请号：US11664369

    申请日：2005-10-04

    申请人： Jochen Friedrich ,  Georg Muller ,  Rainer Apelt ,  Elke Meissner ,  Bernhard Birkmann ,  Stephan Hussy

    发明人： Jochen Friedrich ,  Georg Muller ,  Rainer Apelt ,  Elke Meissner ,  Bernhard Birkmann ,  Stephan Hussy

    IPC分类号： B05D3/02 ,  B05D3/04

    CPC分类号： C30B29/403 ,  C30B17/00 ,  C30B19/02

    摘要： The present invention relates to a method for the production of crystal layers or bulk crystals of group III nitride or of mixtures of different group III nitrides by means of precipitation, at a first temperature T1 in a first temperature range, from a group-III containing fused metal on a group-III-nitride crystal seed placed in the fused metal or on a foreign substrate placed in the fused metal, with the admixture of nitrogen in the fused metal at a pressure P.With the method a solvent additive is added to the fused metal which increases the conversion rate of group III metal to group III nitride in the fused metal. The fused metal runs through at least one temperature cycle with a first and a second process phase in which cycle the fused metal cools after the first process phase from the first temperature to a second temperature T2 below the first temperature range and at the end of the second process phase is heated from the second temperature back to a temperature within the first temperature range. The described method permits producing group III nitride crystal layers with a thickness of >10 μm, respectively massive crystals with a diameter of >10 mm at dislocation densities of

    摘要翻译： 本发明涉及在第一温度T 1中通过沉淀生产III族氮化物或不同III族氮化物的混合物的晶体层或本体晶体的方法 范围，从放置在熔融金属中的III族氮化物晶体晶种上的第III族熔融金属或放置在熔融金属中的异质衬底上，在熔融金属中以氮气的混合压力P。 该方法将熔融金属中添加溶剂添加剂，这增加了熔融金属中III族金属与III族氮化物的转化率。 熔融金属在第一和第二工艺阶段中延伸至少一个温度循环，其中熔融金属在第一工艺阶段之后从第一温度冷却至低于第一工艺阶段的第二温度T <2> 温度范围和第二工艺阶段结束时从第二温度加热到第一温度范围内的温度。 所描述的方法允许生产厚度>10μm的III族氮化物晶体层，分别为<10 -8 cm -2的位错密度，直径> 10mm的大块晶体， SUP>在低于1100℃的温度下，处理压力低于5×10 5 Pa。

    Method for the production of group III nitride bulk crystals or crystal layers from fused metals
    2.
    发明授权
    Method for the production of group III nitride bulk crystals or crystal layers from fused metals 有权
    从熔融金属生产III族氮化物本体晶体或晶体层的方法

    公开(公告)号：US08728233B2

    公开(公告)日：2014-05-20

    申请号：US11664369

    申请日：2005-10-04

    申请人： Jochen Friedrich ,  Georg Müller ,  Rainer Apelt ,  Elke Meissner ,  Bernhard Birkmann ,  Stephan Hussy

    发明人： Jochen Friedrich ,  Georg Müller ,  Rainer Apelt ,  Elke Meissner ,  Bernhard Birkmann ,  Stephan Hussy

    IPC分类号： C30B11/00

    CPC分类号： C30B29/403 ,  C30B17/00 ,  C30B19/02

    摘要： The present invention relates to a method for the production of crystal layers or bulk crystals of group III nitride or of mixtures of different group III nitrides by means of precipitation, at a first temperature T1 in a first temperature range, from a group-III containing fused metal on a group-III-nitride crystal seed placed in the fused metal or on a foreign substrate placed in the fused metal, with the admixture of nitrogen in the fused metal at a pressure P.With the method a solvent additive is added to the fused metal which increases the conversion rate of group III metal to group III nitride in the fused metal. The fused metal runs through at least one temperature cycle with a first and a second process phase in which cycle the fused metal cools after the first process phase from the first temperature to a second temperature T2 below the first temperature range and at the end of the second process phase is heated from the second temperature back to a temperature within the first temperature range. The described method permits producing group III nitride crystal layers with a thickness of >10 μm, respectively massive crystals with a diameter of >10 mm at dislocation densities of

    摘要翻译： 本发明涉及通过在第一温度范围内的第一温度T1，从含III族氮化物的第III族氮化物的III族氮化物 将熔融金属放置在置于熔融金属中的第III族氮化物晶体种子上或置于熔融金属中的异质基底上，在熔融金属中以氮气的混合压力P。用该方法将溶剂添加剂 熔融金属，其增加熔融金属中III族金属与III族氮化物的转化率。 熔融金属穿过至少一个具有第一和第二工艺阶段的温度循环，其中熔融金属在第一工艺阶段之后从第一温度冷却到低于第一温度范围的第二温度T2， 第二工艺阶段从第二温度加热到第一温度范围内的温度。 所述方法允许在低于1100℃的温度下在≤108cm-2的位错密度下生产厚度>10μm的III族氮化物晶体层，分别为直径> 10mm的大块晶体，工艺压力低于5× 105 Pa

    PROCESS AND APPARATUS FOR MANUFACTURING POLYCRYSTALLINE SILICON INGOTS
    5.
    发明申请
    PROCESS AND APPARATUS FOR MANUFACTURING POLYCRYSTALLINE SILICON INGOTS 审中-公开
    制造多晶硅硅素体的工艺和装置

    公开(公告)号：US20130255318A1

    公开(公告)日：2013-10-03

    申请号：US13703654

    申请日：2011-06-10

    申请人： Stephan Hussy ,  Oleksandr Prokopenko ,  Ralf Kloos ,  Christian Hoess

    发明人： Stephan Hussy ,  Oleksandr Prokopenko ,  Ralf Kloos ,  Christian Hoess

    IPC分类号： C01B33/021 ,  F27B14/20 ,  F27B14/06

    CPC分类号： C01B33/021 ,  C30B11/003 ,  C30B29/06 ,  F27B14/04 ,  F27B14/06 ,  F27B14/20 ,  F27D99/0006

    摘要： A process and apparatus for producing polycrystalline silicon ingots. A crucible is arranged in a process chamber and filled with solid silicon material. At least one diagonal heater is located laterally offset to and generally above the silicon ingot to be produced. The silicon material is heated to form molten silicon in the crucible, and thereafter cooled down below the solidification temperature of the molten silicon. A temperature profile in the silicon material during the cooling phase is controlled at least partially via the at least one diagonal heater. The apparatus includes a process chamber, a crucible holder, and at least one diagonal heater. The diagonal heater is located laterally with respect to the crucible holder and generally above a polycrystalline silicon ingot to be formed in the crucible. The diagonal heater is stationary with respect to the crucible holder when the process chamber is closed.

    摘要翻译： 一种用于生产多晶硅锭的方法和设备。 坩埚布置在处理室中并填充有固体硅材料。 至少一个对角加热器位于横向偏移并且大致位于待生产的硅锭的上方。 加热硅材料以在坩埚中形成熔融硅，然后冷却至低于熔融硅的凝固温度。 至少部分地经由至少一个对角加热器来控制在冷却阶段期间硅材料中的温度分布。 该装置包括处理室，坩埚保持器和至少一个对角加热器。 对角加热器相对于坩埚保持器横向定位，并且通常位于待形成坩埚中的多晶硅锭的上方。 当处理室关闭时，对角加热器相对于坩埚保持器是静止的。

    METHOD AND DEVICE FOR PRODUCING POLYCRYSTALLINE SILICON BLOCKS
    6.
    发明申请
    METHOD AND DEVICE FOR PRODUCING POLYCRYSTALLINE SILICON BLOCKS 审中-公开
    用于生产多晶硅块的方法和装置

    公开(公告)号：US20130219967A1

    公开(公告)日：2013-08-29

    申请号：US13703922

    申请日：2011-06-10

    申请人： Stephan Hussy ,  Christian Hoess

    发明人： Stephan Hussy ,  Christian Hoess

    IPC分类号： F27B14/04 ,  C01B33/021

    CPC分类号： F27B14/04 ,  C01B33/021 ,  C30B11/002 ,  C30B11/003 ,  C30B11/04 ,  C30B29/06

    摘要： A crucible is filled with silicon material and is arranged in a process chamber. The silicon material in the crucible is melted and is subsequently cooled below the solidification temperature. During a time period, a plate element that has at least one passage may be arranged over the molten silicon in the crucible, and a gas flow may be directed onto the surface of the molten silicon at least partially via the at least one passage. Alternatively a crucible arrangement includes a crucible and a holding ring arranged on or above a crucible filled with silicon material. Additional silicon material may be received and held above the crucible by the holding ring. During the heating of the silicon material in the crucible and the holding ring, molten silicon is formed in a crucible, which is subsequently cooled below the solidification temperature of the silicon.

    摘要翻译： 坩埚中填充有硅材料，并布置在处理室中。 将坩埚中的硅材料熔化并随后冷却至凝固温度以下。 在一段时间内，具有至少一个通道的板元件可以布置在坩埚中的熔融硅上方，并且可以至少部分地经由至少一个通道将气流引导到熔融硅的表面上。 或者，坩埚装置包括布置在填充有硅材料的坩埚上或上方的坩埚和保持环。 另外的硅材料可以被保持环容纳并保持在坩埚上方。 在坩埚和保持环中的硅材料加热期间，在坩埚中形成熔融硅，随后冷却至低于硅的凝固温度。