Optoelectronic devices with control of light propagation
    1.
    发明授权
    Optoelectronic devices with control of light propagation 失效
    具有光传播控制的光电器件

    公开(公告)号:US4080617A

    公开(公告)日:1978-03-21

    申请号:US694333

    申请日:1976-06-09

    IPC分类号: G02B6/12 H01L27/15 H01L33/00

    摘要: In an optoelectronic device, light is restrained from propagating in one or both confining layers on either side of an active layer by forming one or more photon absorbing barriers in one, or both, confining layers. A photon absorbing barrier can be formed by proton bombardment of a confining layer, by producing a protrusion from the substrate into the adjacent confining layer, or by producing a protrusion from a capping layer into the other confining layer, or by combinations of these. Spaced apart barriers can define a device, or sections of a multi-sectioned device, for example a monolithic light emitting diode and modulator.

    摘要翻译: 在光电子器件中,通过在一个或两个约束层中形成一个或多个光子吸收屏障,光被抑制在有源层的任一侧上的一个或两个约束层中传播。 光子吸收屏障可以通过限制层的质子轰击,通过从衬底产生到相邻限制层中的突起,或通过从封盖层产生到另一封闭层中的突起,或通过这些的组合形成。 间隔开的障碍物可以限定一个设备,或多分段设备的部分,例如单片发光二极管和调制器。

    Method of producing optoelectronic devices with control of light
propagation
    2.
    发明授权
    Method of producing optoelectronic devices with control of light propagation 失效
    制造光传输器件控制方法

    公开(公告)号:US4115150A

    公开(公告)日:1978-09-19

    申请号:US765900

    申请日:1977-02-07

    IPC分类号: G02B6/12 H01L27/15 H01L33/00

    摘要: In an optoelectronic device, light is restrained from propagating in one or both confining layers on either side of an active layer by forming one or more photonabsorbing barriers in one, or both, confining layers. A photon absorbing barrier can be formed by proton bombardment of a confining layer, by producing a protrusion from the substrate into the adjacent confining layer, or by producing a protrusion from a capping layer into the other confining layer, or by combinations of these. Spaced apart barriers can define a device, or sections of a multi-sectioned device, for example a monolithic light emitting diode and modulator.

    摘要翻译: 在光电子器件中,通过在一个或两个限制层中形成一个或多个光子吸收屏障,光被抑制在有源层的任一侧上的一个或两个约束层中传播。 光子吸收屏障可以通过限制层的质子轰击,通过从衬底产生到相邻限制层中的突起,或通过从封盖层产生到另一封闭层中的突起,或通过这些的组合形成。 间隔开的障碍物可以限定一个设备,或多分段设备的部分,例如单片发光二极管和调制器。

    Photodiode detector with selective frequency response
    3.
    发明授权
    Photodiode detector with selective frequency response 失效
    具有选择性频率响应的光电二极管检测器

    公开(公告)号:US3955082A

    公开(公告)日:1976-05-04

    申请号:US507455

    申请日:1974-09-19

    摘要: A photodiode detector comprises a substrate on which a plurality of detector sections are formed, in series. Reverse bias is applied to the separate sections, the bias more negative for each section from the input end. The absorption bandwidth for each section can vary and the bandwidth of a section can be variable.

    摘要翻译: 光电二极管检测器包括串联形成有多个检测器部分的基板。 反向偏置被施加到单独的部分,每个部分的输入端的偏置更负。 每个部分的吸收带宽可以变化,并且部分的带宽可以是可变的。