公开(公告)号：US5668047A

公开(公告)日：1997-09-16

申请号：US251259

申请日：1994-05-31

Applicant: Yoshiharu Muroya

Inventor： Yoshiharu Muroya

IPC: H01S5/00 ,  H01S5/12 ,  H01L21/20

CPC classification number: H01S5/12 ,  H01S5/1231 ,  Y10S148/095 ,  Y10S148/099 ,  Y10S438/948

Abstract: A method for fabricating an InP diffraction grating for a distributed feedback semiconductor laser includes the steps of applying an electron beam resist on a semiconductor substrate, giving electron beam exposure to the electron beam resist and controlling heights of resist patterns by using fixed electron beam diameters but by varying incident electron doses. The semiconductor substrate is dry-etched. The electron beam exposure is such that the incident electron doses are made larger at a center portion than at portions towards two sides of the diffraction grating. Due to the proximity effect, the resist patterns after development will have a lower height and a narrower width at portions at which the incident electron doses are increased and, conversely, a higher height and a wider width at portions at which the incident electron doses are decreased. In a method of fabricating a distributed feedback laser using a substrate of the InP diffraction grating fabricated as above, the method includes the step of sequentially growing on the substrate a waveguide layer, an active layer and a cladding layer. The method enables to fabricate a low distortion distributed feedback laser for analog modulation having non-uniform diffraction gratings.

Abstract translation: 制造用于分布式反馈半导体激光器的InP衍射光栅的方法包括以下步骤：在半导体衬底上施加电子束抗蚀剂，使电子束暴露于电子束抗蚀剂并通过使用固定的电子束直径控制抗蚀剂图案的高度，但是 通过改变入射电子剂量。 干式蚀刻半导体衬底。 电子束曝光使得入射电子剂量在中心部分比在衍射光栅两侧的部分处更大。 由于邻近效应，显影后的抗蚀剂图案在入射电子剂量增加的部分处将具有较低的高度和较窄的宽度，相反地，在入射电子剂量的部分处具有较高的高度和较宽的宽度 减少。 在使用如上制造的InP衍射光栅的衬底制造分布反馈激光的方法中，该方法包括在衬底上顺序生长在波导层，有源层和包覆层上的步骤。 该方法能够制造具有不均匀衍射光栅的模拟调制的低失真分布反馈激光器。

公开(公告)号：US5354707A

公开(公告)日：1994-10-11

申请号：US149394

申请日：1993-11-09

Applicant: Jonathan D. Chapple-Sokol ,  Seshadri Subbanna ,  Manu J. Tejwani

Inventor： Jonathan D. Chapple-Sokol ,  Seshadri Subbanna ,  Manu J. Tejwani

IPC: H01L21/20 ,  G02B6/42 ,  H01L29/06 ,  H01L31/0352 ,  H01L31/105 ,  H01L31/12 ,  H01L33/06 ,  H01L33/34 ,  H01L21/203 ,  H01L31/18

CPC classification number: H01L33/06 ,  B82Y10/00 ,  B82Y20/00 ,  G02B6/42 ,  H01L31/0352 ,  H01L31/105 ,  H01L33/34 ,  Y10S148/099 ,  Y10S438/962

Abstract: A semiconductor light emitting/detecting device has a first doped silicon layer, an intrinsic silicon epitaxial layer formed on the first doped silicon layer, at least one quantum dot embedded within the intrinsic silicon epitaxial layer, and a second doped silicon layer formed on the second intrinsic silicon epitaxial layer.

Abstract translation: 半导体发光/​​检测装置具有第一掺杂硅层，形成在第一掺杂硅层上的本征硅外延层，嵌入本征硅外延层内的至少一个量子点，以及形成在第二掺杂硅层上的第二掺杂硅层 本征硅外延层。

公开(公告)号：US5116781A

公开(公告)日：1992-05-26

申请号：US568803

申请日：1990-08-17

Applicant: John A. Agostinelli ,  David J. Lawrence

Inventor： John A. Agostinelli ,  David J. Lawrence

IPC: H01L21/22 ,  H01L21/225 ,  H01L33/00

CPC classification number: H01L21/2258 ,  Y10S148/099

Abstract: A process is disclosed of diffusing a zinc dopant into a III-V compound substrate. To avoid degrading the substrate surface the zinc dopant source is provided by coating an organic composition comprised of a zinc organic compound chosen from the group consisting of zinc alcoholates, .beta.-diketonate chelates and carboxylate salts. The composition inludes at least one organic film-forming moiety containing from 5 to 30 carbon atoms.

Abstract translation: 公开了将锌掺杂剂扩散到III-V复合衬底中的方法。 为了避免降解底物表面，锌掺杂剂源通过涂覆由锌醇盐酸盐，β-二酮螯合物和羧酸盐组成的组中的锌有机化合物组成的有机组合物来提供。 所述组合物包含含有5至30个碳原子的至少一个有机成膜部分。

公开(公告)号：US5003358A

公开(公告)日：1991-03-26

申请号：US227124

申请日：1988-08-02

Applicant: Shogo Takahashi ,  Etsuji Omura

Inventor： Shogo Takahashi ,  Etsuji Omura

IPC: H01L27/15 ,  H01L33/14 ,  H01L33/30 ,  H01L33/36 ,  H01S5/00 ,  H01S5/042

CPC classification number: H01L27/15 ,  H01L33/0025 ,  Y10S148/072 ,  Y10S148/099

Abstract: A semiconductor light emitting device includes a vertical aperture produced at a main surface of a semi-insulating or insulating substrate, a transverse aperture provided in the substrate communicating with the vertical aperture, a conducting semiconductor layer buried in the vertical aperture and the transverse aperture, a groove produced by etching the substrate from the surface thereof until reaching the conducting semiconductor layer at a portion of the transverse aperture, and a light emitting element produced in the groove, and the light emitting region of the element being buried in the groove and connected with the buried conducting semiconductor layer. Accordingly, no pn junction exists at the periphery of the light emitting region, and a semiconductor light emitting element of quite low parasitic capacitance is obtained at high yield. A planar structure in which two electrodes are produced at the same plane is obtained, resulting in ease of integration and enhancement of the integration density.

Abstract translation: 半导体发光器件包括在半绝缘或绝缘衬底的主表面处产生的垂直孔，设置在与垂直孔连通的衬底中的横向孔，埋在垂直孔中的导电半导体层和横向孔， 通过从其表面蚀刻基板直到到达横向孔的一部分处的导电半导体层而产生的凹槽和在凹槽中产生的发光元件，并且元件的发光区域被埋入凹槽中并连接 与埋入的导电半导体层。 因此，在发光区域的周围没有pn结，以高产率获得具有相当低的寄生电容的半导体发光元件。 获得在同一平面上制造两个电极的平面结构，从而易于集成并增强集成密度。

公开(公告)号：US4001056A

公开(公告)日：1977-01-04

申请号：US522380

申请日：1974-11-11

Applicant: Warren O. Groves ,  Arnold S. Epstein

Inventor： Warren O. Groves ,  Arnold S. Epstein

IPC: H01L21/205 ,  H01L29/207 ,  H01L21/20 ,  H01L29/12

CPC classification number: H01L29/207 ,  H01L21/02392 ,  H01L21/02395 ,  H01L21/02461 ,  H01L21/02463 ,  H01L21/02543 ,  H01L21/02573 ,  H01L21/02579 ,  H01L21/02581 ,  H01L21/0262 ,  H01L21/02661 ,  Y10S148/04 ,  Y10S148/099 ,  Y10S148/11

Abstract: The disclosure herein pertains to a vapor phase process for the preparation of electroluminescent materials, particularly GaP, doped with isoelectronic impurities, particularly nitrogen, and to electroluminescent devices fabricated therefrom.

公开(公告)号：US3905037A

公开(公告)日：1975-09-09

申请号：US84326869

申请日：1969-06-11

Applicant: TEXAS INSTRUMENTS INC

Inventor： BEAN KENNETH E ,  CRONIN GEORGE R

IPC: G11C17/08 ,  H01L21/00 ,  H01L21/76 ,  H01L21/8252 ,  H01L21/8258 ,  H01L23/29 ,  H01L27/00 ,  H01L27/082 ,  H01L27/144 ,  H01L29/02 ,  H01L33/00 ,  H03K17/60 ,  H01L21/70 ,  H01L27/02 ,  H01L29/04

CPC classification number: H03K17/60 ,  G11C17/08 ,  H01L21/00 ,  H01L21/76 ,  H01L21/8252 ,  H01L21/8258 ,  H01L23/29 ,  H01L27/00 ,  H01L27/0825 ,  H01L27/1443 ,  H01L29/02 ,  H01L33/00 ,  H01L2924/0002 ,  Y10S148/026 ,  Y10S148/072 ,  Y10S148/085 ,  Y10S148/099 ,  Y10S148/115 ,  H01L2924/00

Abstract: This invention relates to a monolithic integrated circuit in a substrate of a first semiconductor material containing electrically insulated islands of other different semiconductor materials. Preferably each of the islands is isolated from the substrate and from each other by an insulating layer of material. Thus an integrated circuit can be manufactured in a single substrate in accordance with the particular needs of the circuit functions required.

Abstract translation: 本发明涉及包含其他不同半导体材料的电绝缘岛的第一半导体材料的衬底中的单片集成电路。 优选地，每个岛与衬底隔离并且通过材料的绝缘层彼此隔离。 因此，可以根据需要的电路功能的特定需要在单个基板中制造集成电路。

公开(公告)号：US3821777A

公开(公告)日：1974-06-28

申请号：US29145672

申请日：1972-09-22

Applicant: VARIAN ASSOCIATES

Inventor： JAMES L

IPC: H01L31/107 ,  H01L31/11 ,  H01L15/00

CPC classification number: H01L31/107 ,  H01L31/11 ,  Y10S148/065 ,  Y10S148/067 ,  Y10S148/072 ,  Y10S148/099 ,  Y10S148/107

Abstract: AN AVALANCHE PHOTODIODE, PARTICULARLY USEFUL FOR DETECTION OF INFRARED ENERGY IN THE WAVELENGTH REGION FROM 1 TO 2 MICRONS, INCLUDES AN ACTIVE EPITAXIAL LAYER OF A QUATERNARY IIIV ALLOY SUCH AS N-IN-1-YGAYP1-XASX. THE ACTIVE LAYER INTERFACES WITH A SECOND LATTICE MATCHED EPITAXIAL LAYER OF P-TYPE JUNCTION AL TO DEFINE A LATTICE MATCHED P-N JUNCTION THEREBETWEEN WHICH IS REVERSED BIASED, IN USE. THE ACTIVE LAYER HAS A DIRECT BANDGAP ENERGY LESS THAN THE PHOTON ENERGY OF THE INFRARED ENERGY TO BE DECTED FOR ABSORPTION OF THE PHOTONS TO BE DETECTED TO GENERATED ELECTRON-HOLE PAIRS. THE ACTIVE ALYER IS MADE OF A MATERIAL HAVING AN ENERGY DIFFERENCE BETWEEN THE LOWEST CONDUCTION BAND MINIMUM BAND THE NEXT HIGHER CONDUCTION BAND MINIMA EITHER X1 OR L1 WHICH IS GREATER THAN 1.1 TIMER THE DIRECT BANDGAP ENERGY OF THE ACTIVE LAYER, WHEREBY IMPROVED SIGNAL TO NOISE RATIO IS OBTAINED.

公开(公告)号：US5681756A

公开(公告)日：1997-10-28

申请号：US452777

申请日：1995-05-30

Applicant: Michael P. Norman ,  Thomas B. Harvey, III ,  Xiaodong T. Zhu

Inventor： Michael P. Norman ,  Thomas B. Harvey, III ,  Xiaodong T. Zhu

IPC: G09F13/20 ,  G09F9/00 ,  G09F13/22 ,  H01L27/32 ,  H01L51/50 ,  H01L51/56 ,  H05B33/10 ,  H05B33/12 ,  H05B33/14 ,  H05B33/26 ,  H01L21/76

CPC classification number: H01L27/3209 ,  H01L51/5012 ,  G09F13/22 ,  H01L27/3211 ,  H01L27/3281 ,  H01L51/56 ,  Y10S148/099

Abstract: A method of fabricating an integrated multicolor organic LED array including providing a negative layer and patterning a plurality of different color LED organic layers, one at a time, on the negative layer to form a plurality of different color LEDs in a plurality of areas of a selected array. A first color LED organic layer is patterned on the negative layer in first areas and to define additional areas for additional LEDs laterally separated from the first color LEDs and a final color LED organic layer is deposited in final areas and on previously patterned layers to form a plurality of final color LEDs. Transparent positive contacts are then formed on the final color LED layer in the first and final areas so as to form positive contacts to the first and the final color LEDs.

Abstract translation: 一种制造集成多色有机LED阵列的方法，包括在负层上一次一个地提供负层和图案化多个不同颜色的LED有机层，以在多个区域中形成多个不同颜色的LED 选择数组。 第一颜色的LED有机层被图案化在第一区域的负层上并且为从第一颜色LED横向分离的附加LED限定另外的区域，并且最后的彩色LED有机层沉积在最终区域中并且在预先图案化的层上形成 多个最终的彩色LED。 然后在第一和最后区域中的最终的彩色LED层上形成透明的正触点，以便与第一和最终的彩色LED形成正接触。

公开(公告)号：US5675142A

公开(公告)日：1997-10-07

申请号：US521208

申请日：1995-08-30

Applicant: Michael D. Rostoker

Inventor： Michael D. Rostoker

IPC: H01L31/0232 ,  H01J40/14

CPC classification number: H01L27/14618 ,  H01L27/14627 ,  H01L31/0232 ,  H01L2924/0002 ,  Y10S148/099

Abstract: Methods of etching optical elements in association with photosensitive elements are described. In some of the arrangements, the optical elements are formed integrally with a substrate containing the photosensitive elements. In other arrangements, an optical element is mounted to a package, or the like, containing the substrate and photosensitive elements. In other arrangements, two or more optical elements are employed, including conventional refractive elements, refractive focusing elements, and refractive beam splitting elements. Utility as solid state image sensors is discussed. Utility for monochromatic and color imaging is discussed.

Abstract translation: 描述了与感光元件相关联的蚀刻光学元件的方法。 在一些布置中，光学元件与包含感光元件的基板一体地形成。 在其他布置中，将光学元件安装到包含基板和感光元件的封装等上。 在其他布置中，采用两个或多个光学元件，包括常规折射元件，折射聚焦元件和折射光束分离元件。 讨论了作为固态图像传感器的实用性。 讨论了单色和彩色成像的实用性。

公开(公告)号：US5530269A

公开(公告)日：1996-06-25

申请号：US412486

申请日：1995-03-28

Applicant: Ching W. Tang

Inventor： Ching W. Tang

IPC: B41J2/45 ,  H01L27/32 ,  H01L51/50 ,  H01L33/00 ,  H05B33/02

CPC classification number: H01L51/5203 ,  B41J2/45 ,  H01L27/32 ,  H01L51/5012 ,  H01L27/3281 ,  Y10S148/099

Abstract: A light emitting device that comprises an organic LED array containing a plurality of light emitting pixels, the pixels each being located on a common electrically insulative transparent substrate, is characterized in that the transparent support is ultra thin, having a thickness less than the pitch of the pixels. The pixels in the LED array can be arranged in intersecting columns and rows, or they can comprise a line array. A process for forming a light emitting device on an ultra thin transparent substrate comprises the following steps: (a) releasably laminating to an ultra thin electrically insulating transparent substrate a relatively thick rigid temporary support; (b) forming the LED array on the ultra thin substrate; (c) forming on a relatively thick rigid permanent support an electrical conductor patterned in conformity with the first electrode element and the second electrode element on the ultra thin substrate; (d) forming an array of electrically conductive malleable bonding bumps on the patterned electrical conductor located on the permanent support; (e) aligning the first and second electrode elements in correct registration with the patterned electrical conductor; (f) contacting the bonding bumps on the electrical conductor with the first and second electrode elements; (g) forming a physical and electrical connection between the bonding bumps and the first and second electrode elements; and (h) delaminating the temporary support from the ultra thin transparent substrate. Additionally, a transparent and electrically insulative sealant material can be introduced into the space between the ultra thin substrate and the electrical conductor on the permanent support.

Abstract translation: 一种发光器件，其包括含有多个发光像素的有机LED阵列，每个所述像素均位于公共电绝缘透明基板上，其特征在于，所述透明支撑体是超薄的，其厚度小于 像素。 LED阵列中的像素可以以相交的列和行布置，或者它们可以包括线阵列。 一种在超薄透明基板上形成发光器件的方法，包括以下步骤：（a）将超薄电绝缘透明基板可剥离地层压到相对厚的刚性临时支撑件上; （b）在超薄基板上形成LED阵列; （c）在相对较厚的刚性永久支撑件上形成与超薄基板上的第一电极元件和第二电极元件一致地图案化的电导体; （d）在位于永久支架上的图案化电导体上形成导电可延展的接合凸起阵列; （e）使所述第一和第二电极元件与图案化电导体正确对准; （f）使电导体上的接合凸块与第一和第二电极元件接触; （g）在所述接合凸块和所述第一和第二电极元件之间形成物理和电连接; 和（h）从超薄透明基板剥离临时支撑体。 此外，可以将透明和电绝缘的密封剂材料引入到超薄基板和永久支撑件上的电导体之间的空间中。