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公开(公告)号:US4905265A
公开(公告)日:1990-02-27
申请号:US151235
申请日:1988-02-01
申请人: John D. Cox , Alan M. Jacobs , Stephen A. Scott , Yi-Shung Juang
发明人: John D. Cox , Alan M. Jacobs , Stephen A. Scott , Yi-Shung Juang
IPC分类号: G01T1/29 , H01L27/146 , H04N5/32
CPC分类号: H01L27/14661 , G01T1/2928 , H04N5/32
摘要: The x-ray imaging system comprises an x-ray source for producing an x-ray beam and an x-ray detector. The x-ray detector comprises a solid state integrated circuit having a silicon substrate and a plurality of charge storage devices. A circuit is provided for placing a charge on the charge storage devices and the integrated circuit is disposed in an x-ray permeable material. The detector is positioned in an x-ray beam such that the charge is dissipated by secondary radiation produced by interaction between the x-ray beam and the silicon substrate of the integrated circuit.
摘要翻译: x射线成像系统包括用于产生x射线束的x射线源和x射线检测器。 x射线检测器包括具有硅衬底和多个电荷存储装置的固态集成电路。 提供了一种用于将电荷放置在电荷存储装置上的电路,并且该集成电路设置在x射线可渗透材料中。 检测器被定位在x射线束中,使得电荷通过由x射线束和集成电路的硅衬底之间的相互作用产生的二次辐射消散。
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公开(公告)号:US5043582A
公开(公告)日:1991-08-27
申请号:US462042
申请日:1990-01-08
申请人: John D. Cox , Alan M. Jacobs , Stephen A. Scott , Yi-Shung Juang
发明人: John D. Cox , Alan M. Jacobs , Stephen A. Scott , Yi-Shung Juang
CPC分类号: G01T1/2928 , G01T1/2018 , G01T1/245 , H01L27/14609 , H01L27/14618 , H01L27/14663 , H04N5/32 , H01L2924/0002
摘要: The x-ray detector comprises a plurality of closely adjacent radiation sensing arrays facing a plurality of preprocessing circuits. Bump bonds are connected directly from said sensing arrays to said preprocessing circuits. Added absorber material may be included next to the sensing arrays for converting impinging x-rays to free electrons for affecting a charge on the sensing arrays. Alternately, a scintillator may be positioned between the sensing arrays and the preprocessing circuits and sensing cells in the sensing arrays may be exposed to the scintillator.
摘要翻译: x射线检测器包括面向多个预处理电路的多个紧密相邻的辐射感测阵列。 凸起键直接从所述感测阵列连接到所述预处理电路。 添加的吸收材料可以包括在用于将入射的X射线转换成自由电子以用于影响感测阵列上的电荷的感测阵列旁边。 或者,闪烁体可以位于感测阵列和预处理电路之间,并且感测阵列中的感测单元可能暴露于闪烁体。
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