公开(公告)号：US5575888A

公开(公告)日：1996-11-19

申请号：US422102

申请日：1995-04-14

申请人： John Kosakowski ,  William Chu ,  Kelly W. Foster ,  Christie R. K. Marrian ,  Martin C. Peckerar

发明人： John Kosakowski ,  William Chu ,  Kelly W. Foster ,  Christie R. K. Marrian ,  Martin C. Peckerar

IPC分类号： C23F4/00 ,  H01L21/3213 ,  H01L21/3205

CPC分类号： H01L21/32136 ,  C23F4/00

摘要： Sidewalls in a pattern of a refractory metal on a substrate are passivated during plasma etching by introducing water vapor into the etching chamber. This process obtains nearly vertical sidewalls. In one exemplified embodiment, a pattern of tungsten on a chromium etch step layer was reactive ion etched. In that embodiment, the reactive ion etching was intermittently paused. After each pause, the workpiece was warmed from below about 20.degree. C. to about room temperature. Then, water vapor was introduced into the etching chamber housing the workpiece. After the water vapor was introduced, the workpiece was cooled to below about 20.degree. C. and reactive ion etching was resumed. Alternatively, water vapor can be introduced into the etching chamber continuously during plasma etching.

摘要翻译： 通过将水蒸汽引入蚀刻室，在等离子体蚀刻期间，将基板上难熔金属图案的侧壁钝化。 该过程获得几乎垂直的侧壁。 在一个示例性实施例中，铬蚀刻步骤层上的钨的图案被反应离子蚀刻。 在该实施例中，反应离子蚀刻被间歇地暂停。 每次暂停后，将工件从低于约20℃升温至约室温。 然后，将水蒸汽引入到容纳工件的蚀刻室中。 引入水蒸气后，将工件冷却至低于约20℃，并恢复反应离子蚀刻。 或者，可以在等离子体蚀刻期间连续地将水蒸汽引入蚀刻室。