摘要:
An electrochemical energy cell has a galvanic cell including an anode electrode unit, a cathode electrode unit, an electrolyte body between the anode and cathode electrode units and contacting both the anode and cathode electrode units, and a separator layer including the electrolyte body and placed within the cell to contact both the anode and cathode electrode units to bring the anode and cathode electrode units in contact with the electrolyte body. The cathode electrode unit includes a cathode material including a powder mixture of a powder of hydrated ruthenium oxide and one or more additives. The anode electrode unit includes a structure formed of an oxidizable metal, and the separator layer includes a material that is porous to ions in liquid and is electrically non-conductive. A flexible electrochemical cell can be configured for a reduction-oxidation reaction to generate power at a surface of the electrode unit(s).
摘要:
A nanophotolithography mask includes a layer of an electrically conductive optically opaque material deposited on a mask substrate in which regular arrays of sub-wavelength apertures are formed. The plasmonic excitation in the layer perforated with the sub-wavelength apertures arrays under the light incident on the mask produces high resolution far-field radiation patterns of sufficient intensity to expose a photoresist on a wafer when propagated to the same. The fill-factor of the mask, i.e., the ratio of the total apertures area to the total mask area, may lead to a significant increase in mask manufacturing throughput by FIB or electron beam “writing”. The mask demonstrates the defect resiliency and ability to imprint coherent clear features of nano dimensions and shapes on the wafers for integrated circuits design.
摘要:
A thin, rechargeable, flexible electrochemical energy cell includes a battery cell, or a capacitor cell, or a battery/capacitor hybrid cell that can be stackable in any number and order. The cell can be based on a powdery mixture of hydrated ruthenium oxide particles or nanoparticles with activated carbon particles or nanoparticles suspended in an electrolyte. The electrolyte may contain ethylene glycol, boric acid, citric acid, ammonium hydroxide, organic acids, phosphoric acid, and/or sulphuric acid. An anode electrode may be formed with a thin layer of oxidizable metal (Zn, Al, or Pb). The cathode may be formed with a graphite backing foil. The energy cell may have a voltage at or below 1.25V for recharging. The thickness 15 of the cell structure can be in the range of 0.5 mm-1 mm, or lower.
摘要:
High aspect ratio metal microstructures may be prepared by a method involving (i) forming a layer of a photoresist on a substrate; (ii) exposing the layer to actinic radiation in an imagewise manner and developing the exposed layer to obtain a surface which contains regions having no remaining photoresist and regions covered with photoresist; (iii) metallizing the surface to form a layer of metal on the region of the surface having no remaining photoresist and on the sides of the regions of photoresist remaining on the surface; and (iv) optionally, stripping the photoresist remaining on the surface. Such microstructures are useful as electron emitters, anisotropic high dielectric interconnects, masks for x-ray photolithography, carriers for the controlled release of active agents, and ultramicroelectrode arrays.
摘要:
The present invention is a fiducial electron beam detector including an etron beam absorber layer having one or more apertures for transmitting an electron beam, and a conductive or semiconductive structure adapted to produce a current in response to an incident electron beam transmitted through an aperture. When electrons from the electron beam strike this structure, a flow of electrons is created which may be monitored using any of the known methods for detecting current flow. The present invention is also a fiducial electron beam detector including a first semiconductor layer for electron collection, a first responsive layer of essentially parallel lines of conductive material oriented in one direction, where these conductive lines are separated by nonconductive material, and each of the lines is adapted for producing a current responsive to an electron beam, a second semiconductor layer adapted for electron collection, and a second responsive layer of essentially parallel lines of conductive material oriented in another direction, where these conductive lines are separated by nonconductive material, and each of the fines is adapted for producing a current responsive to an electron beam. Diode layers separate each of the semiconductor and responsive layers, to restrict current flow to a single direction. The present invention is also a method for monitoring the position of an electron beam on a film, in an area wherein the beam can create a useful image on the film.
摘要:
Sidewalls in a pattern of a refractory metal on a substrate are passivated during plasma etching by introducing water vapor into the etching chamber. This process obtains nearly vertical sidewalls. In one exemplified embodiment, a pattern of tungsten on a chromium etch step layer was reactive ion etched. In that embodiment, the reactive ion etching was intermittently paused. After each pause, the workpiece was warmed from below about 20.degree. C. to about room temperature. Then, water vapor was introduced into the etching chamber housing the workpiece. After the water vapor was introduced, the workpiece was cooled to below about 20.degree. C. and reactive ion etching was resumed. Alternatively, water vapor can be introduced into the etching chamber continuously during plasma etching.
摘要:
A system which samples and records the locations of opaque particles accumulating on a surface. The system represents graphically the geometrical distributions of the particles through an integral electronic hardware/software subsystem. The key component is a radiant energy sensitive sensor which produces the sampling surface. The sensor is exposed to a constant level of radiant energy. Opaque particles becoming resident upon the sensor surface inhibit sensitization of the surface by the radiant energy and thereby indicates the presence and location of the particle. Embodiments of the sensor include charge coupled devices (CCDs), photodiode arrays, intrinsic or extrinsic "bulk" material, and optically- or UV-erasable memories.
摘要:
A process for producing metal plated paths on a solid substrate of the kind which has polar functional groups at its surface, utilizing a self-assembling film that is chemically absorbed on the substrate's surface. The solid substrate may, for example, be an insulator of the kind used for substrates in printed circuitry or may, as another example, be a semiconductor of the kind used in semiconductor microcircuitry. The chemical reactivity in regions of the ultra-thin film is altered to produce a desired pattern in the film. A catalytic precursor which adheres only to those regions of the film having enough reactivity to bind the catalyst is applied to the film's surface. The catalyst coated structure is then immersed in an electroless plating bath where metal plates onto the regions activated by the catalyst.
摘要:
Disclosed are two modifications of the Tank-Hopfield circuit, each of which enables the deconvolution of a signal in the presence of noise. In each embodiment, the Tank-Hopfield circuit is modified so that the equation for total circuit energy reduces to one term representing convolution and another information theoretic (or Shannon) entropy. Thus, in finding its global minimum energy state, each modified circuit inherently identifies an optimal estimate of a deconvoluted input signal without noise.
摘要:
A stepper system for ultra-high resolution nano-lithography employs a photolithographic mask which includes a layer of an electrically conductive optically opaque material in which periodic arrays of sub-wavelength apertures are formed. The plasmonic excitation in the photolithographic mask exposed to the light of the wavelength in the range of 197 nm-248 nm, produces high resolution far-field radiation patterns of sufficient intensity to expose a photoresist on a wafer. The stepper system demonstrates the resiliency to the mask defects and ability to imprint coherent clear features of nano dimensions (45 nm-500 nm) and various shapes on the wafers for integrated circuits design. The stepper system may be adjusted to image the plane of the highest plasmonic field exiting the mask.