THIN FLEXIBLE ELECTROCHEMICAL ENERGY CELL
    1.
    发明申请
    THIN FLEXIBLE ELECTROCHEMICAL ENERGY CELL 审中-公开
    薄柔性电化学能量细胞

    公开(公告)号:US20130089769A1

    公开(公告)日:2013-04-11

    申请号:US13642236

    申请日:2011-04-28

    IPC分类号: H01M4/48 H01M12/00

    摘要: An electrochemical energy cell has a galvanic cell including an anode electrode unit, a cathode electrode unit, an electrolyte body between the anode and cathode electrode units and contacting both the anode and cathode electrode units, and a separator layer including the electrolyte body and placed within the cell to contact both the anode and cathode electrode units to bring the anode and cathode electrode units in contact with the electrolyte body. The cathode electrode unit includes a cathode material including a powder mixture of a powder of hydrated ruthenium oxide and one or more additives. The anode electrode unit includes a structure formed of an oxidizable metal, and the separator layer includes a material that is porous to ions in liquid and is electrically non-conductive. A flexible electrochemical cell can be configured for a reduction-oxidation reaction to generate power at a surface of the electrode unit(s).

    摘要翻译: 电化学能量电池具有包括阳极电极单元,阴极电极单元,在阳极和阴极电极单元之间的电解质体并且接触阳极和阴极电极单元的电池单元和包括电解质体的隔离层, 电池与阳极和阴极电极单元接触以使阳极和阴极电极单元与电解质体接触。 阴极电极单元包括阴极材料,其包括水合氧化钌粉末与一种或多种添加剂的粉末混合物。 阳极电极单元包括由可氧化金属形成的结构,并且隔离层包括对液体中的离子是多孔的并且是非导电的材料。 柔性电化学电池可以被配置用于还原氧化反应以在电极单元的表面处产生电力。

    Photolithographic mask exhibiting enhanced light transmission due to utilizing sub-wavelength aperture arrays for imaging patterns in nano-lithography
    2.
    发明授权
    Photolithographic mask exhibiting enhanced light transmission due to utilizing sub-wavelength aperture arrays for imaging patterns in nano-lithography 有权
    光刻掩模由于利用用于纳米光刻成像图案的亚波长孔径阵列显示增强的光透射

    公开(公告)号:US08052908B2

    公开(公告)日:2011-11-08

    申请号:US12114373

    申请日:2008-05-02

    IPC分类号: B29C33/40

    CPC分类号: G03F7/70433 G03F1/50 G03F1/54

    摘要: A nanophotolithography mask includes a layer of an electrically conductive optically opaque material deposited on a mask substrate in which regular arrays of sub-wavelength apertures are formed. The plasmonic excitation in the layer perforated with the sub-wavelength apertures arrays under the light incident on the mask produces high resolution far-field radiation patterns of sufficient intensity to expose a photoresist on a wafer when propagated to the same. The fill-factor of the mask, i.e., the ratio of the total apertures area to the total mask area, may lead to a significant increase in mask manufacturing throughput by FIB or electron beam “writing”. The mask demonstrates the defect resiliency and ability to imprint coherent clear features of nano dimensions and shapes on the wafers for integrated circuits design.

    摘要翻译: 纳米光刻掩模包括沉积在其上形成有规则的亚波长孔径阵列的掩模基板上的导电光学不透明材料层。 在入射到掩模上的光下,在亚波长孔径阵列穿孔的层中的等离子体激发产生足够强度的高分辨率远场辐射图,以在传播到晶片上时暴露光致抗蚀剂。 掩模的填充因子,即总孔面积与总掩模面积的比率可能导致通过FIB或电子束“写入”的掩模制造通过量的显着增加。 该面具证明了在集成电路设计的晶圆上印刷纳米尺寸和形状的相干清晰特征的缺陷弹性和能力。

    High aspect ratio metal microstructures and method for preparing the same
    4.
    发明授权
    High aspect ratio metal microstructures and method for preparing the same 失效
    高纵横比金属微结构及其制备方法

    公开(公告)号:US5814414A

    公开(公告)日:1998-09-29

    申请号:US601825

    申请日:1996-02-15

    摘要: High aspect ratio metal microstructures may be prepared by a method involving (i) forming a layer of a photoresist on a substrate; (ii) exposing the layer to actinic radiation in an imagewise manner and developing the exposed layer to obtain a surface which contains regions having no remaining photoresist and regions covered with photoresist; (iii) metallizing the surface to form a layer of metal on the region of the surface having no remaining photoresist and on the sides of the regions of photoresist remaining on the surface; and (iv) optionally, stripping the photoresist remaining on the surface. Such microstructures are useful as electron emitters, anisotropic high dielectric interconnects, masks for x-ray photolithography, carriers for the controlled release of active agents, and ultramicroelectrode arrays.

    摘要翻译: 高纵横比金属微结构可以通过以下方法制备:(i)在基底上形成光致抗蚀剂层; (ii)以成像方式将层暴露于光化辐射并显影曝光层以获得包含没有剩余光致抗蚀剂区域和用光刻胶覆盖的区域的表面; (iii)使表面金属化以在表面区域上形成金属层,该区域上没有剩余的光致抗蚀剂,并且在保留在表面上的光致抗蚀剂区域的侧面上; 和(iv)任选地,剥离残留在表面上的光致抗蚀剂。 这种微结构可用作电子发射体,各向异性高介电互连,用于X射线光刻的掩模,用于控制释放活性剂的载体和超微电极阵列。

    Alignment fiducial for improving patterning placement accuracy in e-beam
masks for x-ray lithography
    5.
    发明授权
    Alignment fiducial for improving patterning placement accuracy in e-beam masks for x-ray lithography 失效
    对准基准,用于改善用于x射线光刻的电子束掩模中的图案放置精度

    公开(公告)号:US5703373A

    公开(公告)日:1997-12-30

    申请号:US552651

    申请日:1995-11-03

    IPC分类号: H01J37/244 H01J37/30

    摘要: The present invention is a fiducial electron beam detector including an etron beam absorber layer having one or more apertures for transmitting an electron beam, and a conductive or semiconductive structure adapted to produce a current in response to an incident electron beam transmitted through an aperture. When electrons from the electron beam strike this structure, a flow of electrons is created which may be monitored using any of the known methods for detecting current flow. The present invention is also a fiducial electron beam detector including a first semiconductor layer for electron collection, a first responsive layer of essentially parallel lines of conductive material oriented in one direction, where these conductive lines are separated by nonconductive material, and each of the lines is adapted for producing a current responsive to an electron beam, a second semiconductor layer adapted for electron collection, and a second responsive layer of essentially parallel lines of conductive material oriented in another direction, where these conductive lines are separated by nonconductive material, and each of the fines is adapted for producing a current responsive to an electron beam. Diode layers separate each of the semiconductor and responsive layers, to restrict current flow to a single direction. The present invention is also a method for monitoring the position of an electron beam on a film, in an area wherein the beam can create a useful image on the film.

    摘要翻译: 本发明是一种基准电子束检测器,其包括具有一个或多个用于透射电子束的孔的电子束吸收层,以及适于响应于通过孔传输的入射电子束而产生电流的导电或半导体结构。 当来自电子束的电子撞击该结构时,产生电子流,其可以使用用于检测电流的任何已知方法进行监测。 本发明还是一种基准电子束检测器,其包括用于电子收集的第一半导体层,在一个方向上定向的基本平行的导电材料线的第一响应层,其中这些导线由非导电材料分开,并且每条线 适于产生响应于电子束的电流,适于电子收集的第二半导体层,以及在另一个方向上定向的基本上平行的导电材料线的第二响应层,其中这些导电线被非导电材料分开,并且每个 的细粉被适于产生响应于电子束的电流。 二极管层分离每个半导体层和响应层,以限制电流流向单个方向。 本发明还是一种用于监测电子束在膜上的位置的方法,其中光束可以在膜上产生有用的图像。

    Sidewall passivation by oxidation during refractory-metal plasma etching
    6.
    发明授权
    Sidewall passivation by oxidation during refractory-metal plasma etching 失效
    在难熔金属等离子体蚀刻期间通过氧化的侧壁钝化

    公开(公告)号:US5575888A

    公开(公告)日:1996-11-19

    申请号:US422102

    申请日:1995-04-14

    CPC分类号: H01L21/32136 C23F4/00

    摘要: Sidewalls in a pattern of a refractory metal on a substrate are passivated during plasma etching by introducing water vapor into the etching chamber. This process obtains nearly vertical sidewalls. In one exemplified embodiment, a pattern of tungsten on a chromium etch step layer was reactive ion etched. In that embodiment, the reactive ion etching was intermittently paused. After each pause, the workpiece was warmed from below about 20.degree. C. to about room temperature. Then, water vapor was introduced into the etching chamber housing the workpiece. After the water vapor was introduced, the workpiece was cooled to below about 20.degree. C. and reactive ion etching was resumed. Alternatively, water vapor can be introduced into the etching chamber continuously during plasma etching.

    摘要翻译: 通过将水蒸汽引入蚀刻室,在等离子体蚀刻期间,将基板上难熔金属图案的侧壁钝化。 该过程获得几乎垂直的侧壁。 在一个示例性实施例中,铬蚀刻步骤层上的钨的图案被反应离子蚀刻。 在该实施例中,反应离子蚀刻被间歇地暂停。 每次暂停后,将工件从低于约20℃升温至约室温。 然后,将水蒸汽引入到容纳工件的蚀刻室中。 引入水蒸气后,将工件冷却至低于约20℃,并恢复反应离子蚀刻。 或者,可以在等离子体蚀刻期间连续地将水蒸汽引入蚀刻室。

    System for sampling the sizes, geometrical distribution, and frequency
of small particles accumulating on a solid surface
    7.
    发明授权
    System for sampling the sizes, geometrical distribution, and frequency of small particles accumulating on a solid surface 失效
    用于对固体表面上积聚的小颗粒的尺寸,几何分布和频率进行取样的系统

    公开(公告)号:US5218211A

    公开(公告)日:1993-06-08

    申请号:US781615

    申请日:1991-10-23

    IPC分类号: G01N21/94 G01R31/308

    CPC分类号: G01N21/94 G01R31/308

    摘要: A system which samples and records the locations of opaque particles accumulating on a surface. The system represents graphically the geometrical distributions of the particles through an integral electronic hardware/software subsystem. The key component is a radiant energy sensitive sensor which produces the sampling surface. The sensor is exposed to a constant level of radiant energy. Opaque particles becoming resident upon the sensor surface inhibit sensitization of the surface by the radiant energy and thereby indicates the presence and location of the particle. Embodiments of the sensor include charge coupled devices (CCDs), photodiode arrays, intrinsic or extrinsic "bulk" material, and optically- or UV-erasable memories.

    摘要翻译: 采样和记录不透明粒子聚集在表面上的位置的系统。 该系统通过一个整体的电子硬件/软件子系统图形地表示了颗粒的几何分布。 关键部件是产生采样表面的辐射能敏感传感器。 传感器暴露于恒定的辐射能量水平。 变得驻留在传感器表面上的不透明颗粒通过辐射能抑制表面的致敏,从而指示颗粒的存在和位置。 传感器的实施例包括电荷耦合器件(CCD),光电二极管阵列,固有或外在“体”材料以及光学或UV可擦除存储器。

    Maximum entropy deconvolver circuit based on neural net principles
    9.
    发明授权
    Maximum entropy deconvolver circuit based on neural net principles 失效
    基于神经网络原理的最大熵解卷积电路

    公开(公告)号:US4849925A

    公开(公告)日:1989-07-18

    申请号:US144141

    申请日:1988-01-15

    IPC分类号: G06G7/19 G06N3/063

    CPC分类号: G06G7/1928 G06N3/0635

    摘要: Disclosed are two modifications of the Tank-Hopfield circuit, each of which enables the deconvolution of a signal in the presence of noise. In each embodiment, the Tank-Hopfield circuit is modified so that the equation for total circuit energy reduces to one term representing convolution and another information theoretic (or Shannon) entropy. Thus, in finding its global minimum energy state, each modified circuit inherently identifies an optimal estimate of a deconvoluted input signal without noise.

    摘要翻译: 公开了Tank-Hopfield电路的两个修改,每个都能够在存在噪声的情况下对信号进行去卷积。 在每个实施例中,修改了Tank-Hopfield电路,使得总电路能量的方程式减少到表示卷积和另一个信息理论(或Shannon)熵的一个项。 因此,在找到其全局最小能量状态时,每个修改的电路固有地识别无噪声的去卷积输入信号的最佳估计。

    STEPPER SYSTEM FOR ULTRA-HIGH RESOLUTION PHOTOLITHOGRAPHY USING PHOTOLITHOGRAPHIC MASK EXHIBITING ENHANCED LIGHT TRANSMISSION DUE TO UTILIZING SUB-WAVELENGTH APERTURE ARRAYS
    10.
    发明申请
    STEPPER SYSTEM FOR ULTRA-HIGH RESOLUTION PHOTOLITHOGRAPHY USING PHOTOLITHOGRAPHIC MASK EXHIBITING ENHANCED LIGHT TRANSMISSION DUE TO UTILIZING SUB-WAVELENGTH APERTURE ARRAYS 有权
    使用光刻胶幕进行超高分辨率光刻技术的步进系统展示增强型光传输由于使用子波长光栅阵列

    公开(公告)号:US20090201475A1

    公开(公告)日:2009-08-13

    申请号:US12114409

    申请日:2008-05-02

    IPC分类号: G03B27/42 G03B27/32

    CPC分类号: G03F7/70433 G03F1/50 G03F1/54

    摘要: A stepper system for ultra-high resolution nano-lithography employs a photolithographic mask which includes a layer of an electrically conductive optically opaque material in which periodic arrays of sub-wavelength apertures are formed. The plasmonic excitation in the photolithographic mask exposed to the light of the wavelength in the range of 197 nm-248 nm, produces high resolution far-field radiation patterns of sufficient intensity to expose a photoresist on a wafer. The stepper system demonstrates the resiliency to the mask defects and ability to imprint coherent clear features of nano dimensions (45 nm-500 nm) and various shapes on the wafers for integrated circuits design. The stepper system may be adjusted to image the plane of the highest plasmonic field exiting the mask.

    摘要翻译: 用于超高分辨率纳米光刻的步进系统采用光刻掩模,其包括其中形成有周期性的亚波长孔径阵列的导电光学不透明材料层。 暴露于波长在197nm-248nm范围内的光的光刻掩膜中的等离激元激发产生足够强度的高分辨率远场辐射图,以使晶片上的光刻胶曝光。 步进系统显示了对于掩模缺陷的弹性和在纳米尺寸(45nm-500nm))和用于集成电路设计的晶片上的各种形状的相干清晰特征的印记能力。 可以调整步进系统以对离开掩模的最高等离子体场的平面进行成像。