Apparatus and Method of Wafer Bonding Using Compatible Alloy
    3.
    发明申请
    Apparatus and Method of Wafer Bonding Using Compatible Alloy 有权
    使用兼容合金的晶圆接合的装置和方法

    公开(公告)号:US20110212563A1

    公开(公告)日:2011-09-01

    申请号:US13082834

    申请日:2011-04-08

    IPC分类号: H01L21/782

    摘要: A method of forming an inertial sensor provides 1) a device wafer with a two-dimensional array of inertial sensors and 2) a second wafer, and deposits an alloy of aluminum/germanium onto one or both of the wafers. The alloy is deposited and patterned to form a plurality of closed loops. The method then aligns the device wafer and the second wafer, and then positions the alloy between the wafers. Next, the method melts the alloy, and then solidifies the alloy to form a plurality of conductive hermetic seal rings about the plurality of the inertial sensors. The seal rings bond the device wafer to the second wafer. Finally, the method dices the wafers to form a plurality of individual, hermetically sealed inertial sensors.

    摘要翻译: 形成惯性传感器的方法提供1)具有二维阵列惯性传感器的装置晶片和2)第二晶片,并将铝/锗合金沉积到一个或两个晶片上。 合金被沉积并图案化以形成多个闭合环。 该方法然后对准器件晶片和第二晶片,然后将合金定位在晶片之间。 接下来,该方法熔化合金,然后固化合金以在多个惯性传感器周围形成多个导电密封环。 密封环将装置晶片连接到第二晶片。 最后,该方法切割晶片以形成多个单独的气密密封惯性传感器。

    Apparatus and method of wafer bonding using compatible alloy
    5.
    发明授权
    Apparatus and method of wafer bonding using compatible alloy 有权
    使用相容合金的晶片接合的装置和方法

    公开(公告)号:US08288191B2

    公开(公告)日:2012-10-16

    申请号:US13082834

    申请日:2011-04-08

    摘要: A method of forming an inertial sensor provides 1) a device wafer with a two-dimensional array of inertial sensors and 2) a second wafer, and deposits an alloy of aluminum/germanium onto one or both of the wafers. The alloy is deposited and patterned to form a plurality of closed loops. The method then aligns the device wafer and the second wafer, and then positions the alloy between the wafers. Next, the method melts the alloy, and then solidifies the alloy to form a plurality of conductive hermetic seal rings about the plurality of the inertial sensors. The seal rings bond the device wafer to the second wafer. Finally, the method dices the wafers to form a plurality of individual, hermetically sealed inertial sensors.

    摘要翻译: 形成惯性传感器的方法提供1)具有二维阵列惯性传感器的装置晶片和2)第二晶片,并将铝/锗合金沉积到一个或两个晶片上。 合金被沉积并图案化以形成多个闭合环。 该方法然后对准器件晶片和第二晶片,然后将合金定位在晶片之间。 接下来,该方法熔化合金,然后固化合金以在多个惯性传感器周围形成多个导电密封环。 密封环将装置晶片连接到第二晶片。 最后,该方法切割晶片以形成多个单独的气密密封惯性传感器。

    Apparatus and method of wafer bonding using compatible alloy
    8.
    发明授权
    Apparatus and method of wafer bonding using compatible alloy 有权
    使用相容合金的晶片接合的装置和方法

    公开(公告)号:US07943411B2

    公开(公告)日:2011-05-17

    申请号:US12434772

    申请日:2009-05-04

    IPC分类号: H01L21/00 H01L21/30 H01L21/46

    摘要: A method of forming an inertial sensor provides 1) a device wafer with a two-dimensional array of inertial sensors and 2) a second wafer, and deposits an alloy of aluminum/germanium onto one or both of the wafers. The alloy is deposited and patterned to form a plurality of closed loops. The method then aligns the device wafer and the second wafer, and then positions the alloy between the wafers. Next, the method melts the alloy, and then solidifies the alloy to form a plurality of conductive hermetic seal rings about the plurality of the inertial sensors. The seal rings bond the device wafer to the second wafer. Finally, the method dices the wafers to form a plurality of individual, hermetically sealed inertial sensors.

    摘要翻译: 形成惯性传感器的方法提供1)具有二维阵列惯性传感器的装置晶片和2)第二晶片,并将铝/锗合金沉积到一个或两个晶片上。 合金被沉积并图案化以形成多个闭合环。 该方法然后对准器件晶片和第二晶片,然后将合金定位在晶片之间。 接下来,该方法熔化合金,然后固化合金以在多个惯性传感器周围形成多个导电密封环。 密封环将装置晶片连接到第二晶片。 最后,该方法切割晶片以形成多个单独的气密密封惯性传感器。

    Apparatus and Method of Wafer Bonding Using Compatible Alloy
    10.
    发明申请
    Apparatus and Method of Wafer Bonding Using Compatible Alloy 有权
    使用兼容合金的晶圆接合的装置和方法

    公开(公告)号:US20100059835A1

    公开(公告)日:2010-03-11

    申请号:US12434772

    申请日:2009-05-04

    IPC分类号: H01L23/10 H01L29/84 H01L21/50

    摘要: A method of forming an inertial sensor provides 1) a device wafer with a two-dimensional array of inertial sensors and 2) a second wafer, and deposits an alloy of aluminum/germanium onto one or both of the wafers. The alloy is deposited and patterned to form a plurality of closed loops. The method then aligns the device wafer and the second wafer, and then positions the alloy between the wafers. Next, the method melts the alloy, and then solidifies the alloy to form a plurality of conductive hermetic seal rings about the plurality of the inertial sensors. The seal rings bond the device wafer to the second wafer. Finally, the method dices the wafers to form a plurality of individual, hermetically sealed inertial sensors.

    摘要翻译: 形成惯性传感器的方法提供1)具有二维阵列惯性传感器的装置晶片和2)第二晶片,并将铝/锗合金沉积到一个或两个晶片上。 合金被沉积并图案化以形成多个闭合环。 该方法然后对准器件晶片和第二晶片,然后将合金定位在晶片之间。 接下来,该方法熔化合金,然后固化合金以在多个惯性传感器周围形成多个导电密封环。 密封环将装置晶片连接到第二晶片。 最后,该方法切割晶片以形成多个单独的气密密封惯性传感器。