公开(公告)号：US20160196932A1

公开(公告)日：2016-07-07

申请号：US14988626

申请日：2016-01-05

申请人： Johnny Duc Van CHIEM

发明人： Johnny Duc Van CHIEM

IPC分类号： H01G11/86 ,  H01G11/36 ,  H01G11/30

CPC分类号： H01G11/86 ,  H01G11/24 ,  H01G11/30 ,  H01G11/36 ,  Y02E60/13 ,  Y02T10/7022

摘要： A method of manufacturing trenched electrochemical double layer capacitors is provided. One aspect of the method employs state-of-the art processes used in semi-conductor wafer manufacturing such as photolithography etching for creating trenches in the electrodes of the double layer capacitor. Another aspect of the method employs a die-saw process, which is scalable and low-cost. The trenched super/ultra capacitors made by the disclosed methods have the combined advantage of higher energy storage capacity than conventional planar super/ultra capacitors due to the increased surface area and higher power density than commonly used Li-ion batteries due to the faster charging time and higher instantaneous energy burst power. The manufacturing processes also have the advantage of better manufacturability, scalability and reduced manufacturing cost.

摘要翻译： 提供一种制造沟槽电化学双层电容器的方法。 该方法的一个方面采用半导体晶片制造中使用的最先进的方法，例如用于在双层电容器的电极中产生沟槽的光刻蚀刻。 该方法的另一方面采用可视化和低成本的模锯工艺。 通过所公开的方法制造的沟槽式超/超电容器具有比常规平面超/超级电容器更高的能量存储容量的组合优点，这是由于比通常使用的锂离子电池增加的表面积和更高的功率密度，这是由于更快的充电时间 和更高的瞬时能量突发功率。 制造工艺也具有更好的可制造性，可扩展性和降低制造成本的优点。