公开(公告)号：US06503688B1

公开(公告)日：2003-01-07

申请号：US09868274

申请日：2001-08-03

申请人： Jon Andrew Preece ,  Richard Edward Palmer ,  Alexander Phillip Robinson ,  Toshihiko Kanayama ,  Tetsuya Tada

发明人： Jon Andrew Preece ,  Richard Edward Palmer ,  Alexander Phillip Robinson ,  Toshihiko Kanayama ,  Tetsuya Tada

IPC分类号： G03C500

CPC分类号： G03F7/038 ,  Y10S430/143

摘要： A high resolution patterning method of a resist layer is disclosed by patternwise irradiation of a resist layer with electron beam utilizing a polysubstituted triphenylene compound as the electron beam resist material, which is graphitized and made insoluble in both polar and non-polar organic solvents for electron doses greater than 2×10−3 C/cm2, and which undergoes cleavage of the adduct chains and extensive de-aromatization of the triphenylene core therefore enhancing the solubility in polar solvents only for electron doses between 3×10−4 and 2×10−3 C/cm2. The thus formed positive or negative tone resist layer is highly resistant against dry etching to ensure the utility of the method in fine patterning work for the manufacture of semiconductor devices.

摘要翻译： 通过使用多取代的三亚苯化合物作为电子束抗蚀材料的电子束图案照射抗蚀剂层来公开抗蚀剂层的高分辨率图案化方法，其被石墨化并使其不溶于电子的极性和非极性有机溶剂 剂量大于2×10 -3 C / cm 2，并且其经历了加合物链的裂解和三亚苯基核心的广泛去芳构化，因此仅在3×10 -4和2×10 -3 C / cm 2之间的电子剂量下增强了在极性溶剂中的溶解度。 由此形成的正或负色调抗蚀剂层具有高抗干蚀刻性，以确保该方法在精细图案化工作中用于半导体器件的制造。

公开(公告)号：US6117617A

公开(公告)日：2000-09-12

申请号：US157103

申请日：1998-09-18

申请人： Toshihiko Kanayama ,  Tetsuya Tada ,  Richard Edward Palmer ,  Alexander Phillip Robinson

发明人： Toshihiko Kanayama ,  Tetsuya Tada ,  Richard Edward Palmer ,  Alexander Phillip Robinson

IPC分类号： C07C69/76 ,  G03F7/038 ,  H01L21/027 ,  G03C5/00

CPC分类号： G03F7/038 ,  Y10S430/143

摘要： A high-resolution patterning method of a resist layer is disclosed by patternwise irradiation of the resist layer with electron beams utilizing a methanofullerene compound as the electron beam resist material, which is graphitized and made insoluble in an organic solvent by the electron beam irradiation in a dose of, for example, 1.times.10.sup.-4 C/cm.sup.2 or larger. The thus formed resist layer is highly resistant against dry etching to ensure utilizability of the method in the fine patterning work for the manufacture of semiconductor devices.

摘要翻译： 公开了抗蚀剂层的高分辨率图案形成方法，其中利用电子束的电子束以电子束的方式照射抗蚀剂层，该甲基富勒烯化合物作为电子束抗蚀剂材料，其通过电子束照射被石墨化并且不溶于有机溶剂 剂量为例如1×10 -4 C / cm 2以上。 由此形成的抗蚀剂层对于干蚀刻具有很高的抵抗力，以确保用于制造半导体器件的精细图案化工作中的方法的可利用性。