摘要:
The present disclosure relates to novel methanofullerene derivatives, negative-type photoresist compositions prepared therefrom and methods of using them. The derivatives, their photoresist compositions and the methods are ideal for fine pattern processing using, for example, ultraviolet radiation, beyond extreme ultraviolet radiation, extreme ultraviolet radiation, X-rays and charged particle rays.
摘要:
The present disclosure relates to novel methanofullerene derivatives, negative-type photoresist compositions prepared therefrom and methods of using them. The derivatives, their photoresist compositions and the methods are ideal for fine pattern processing using, for example, ultraviolet radiation, beyond extreme ultraviolet radiation, extreme ultraviolet radiation, X-rays and charged particle rays. Negative photosensitive compositions are also disclosed.
摘要:
The use as a resist material of a methanofullerene derivative having a plurality of open-ended addends, and to a method for forming a patterned resist layer on a substrate using the methanofullerene derivatives. The methanofullerene derivatives can be represented by the formal C2x(CR1R2)m where x is at least 10, m is at least 2, each addend represented by CR1R2 is the same or different, and wherein each R1 and R2 is each a monovalent organic group, or a divalent organic group which forms a ring structure by being joined to the fullerene shell, or where both R1 and R2 of an addend are divalent groups, they may be mutually joined to form a ring structure, save that at least two of R1 or two of R2 are monovalent, or a mixture of such derivatives. The use of any methanofullerene derivative which has been chemically amplified for formation of a patterned resist layer. The essential step of the method is forming a coating layer comprising the methanofullerene derivative on the substrate surface, the methanofullerene derivative being chemically amplified by including in the coating layer at least one additional component which increases the sensitivity of the exposed layer to actinic radiation which is subsequently used to pattern the layer.
摘要:
A method for the formation of a patterned resist layer on a substrate surface by patternwise irradiation with actinic radiation. The first step of the method is formation of a coating layer comprising a substituted triphenylene compound having a diameter of between 1 and 3 nm, a sensitizer which increases the sensitivity of the exposed layer to the actinic radiation used in a subsequent irradiation step and a cross-linker on the substrate surface. Subsequently the coating layer is irradiated patternwise, and unirradiated areas of the coating layer are removed. A resist material comprising a solution of: (i) as the principal resist material a triphenylene derivative having a diameter of from 1 to 3 rim, (ii) a sensitizer which increases the sensitivity of the resist material to actinic radiation, and (iii) a cross-linker capable of cross-linking molecules of the triphenyl derivative, the cross-linker optionally being constituted by a moiety attached to the triphenylene derivative.
摘要:
A high resolution patterning method of a resist layer is disclosed by patternwise irradiation of a resist layer with electron beam utilizing a polysubstituted triphenylene compound as the electron beam resist material, which is graphitized and made insoluble in both polar and non-polar organic solvents for electron doses greater than 2×10−3 C/cm2, and which undergoes cleavage of the adduct chains and extensive de-aromatization of the triphenylene core therefore enhancing the solubility in polar solvents only for electron doses between 3×10−4 and 2×10−3 C/cm2. The thus formed positive or negative tone resist layer is highly resistant against dry etching to ensure the utility of the method in fine patterning work for the manufacture of semiconductor devices.
摘要翻译:通过使用多取代的三亚苯化合物作为电子束抗蚀材料的电子束图案照射抗蚀剂层来公开抗蚀剂层的高分辨率图案化方法,其被石墨化并使其不溶于电子的极性和非极性有机溶剂 剂量大于2×10 -3 C / cm 2,并且其经历了加合物链的裂解和三亚苯基核心的广泛去芳构化,因此仅在3×10 -4和2×10 -3 C / cm 2之间的电子剂量下增强了在极性溶剂中的溶解度。 由此形成的正或负色调抗蚀剂层具有高抗干蚀刻性,以确保该方法在精细图案化工作中用于半导体器件的制造。
摘要:
The present disclosure relates to novel methanofullerene derivatives, negative-type photoresist compositions prepared therefrom and methods of using them. The derivatives, their photoresist compositions and the methods are ideal for fine pattern processing using, for example, ultraviolet radiation, beyond extreme ultraviolet radiation, extreme ultraviolet radiation, X-rays and charged particle rays. Negative photosensitive compositions are also disclosed.
摘要:
Methanofullerene derivatives having side chains with acid-labile protecting groups. The methanofullerene derivatives may find application as photoresist materials, and particularly as positive-tone photoresists.
摘要:
The present disclosure relates to novel methanofullerene derivatives, negative-type photoresist compositions prepared therefrom and methods of using them. The derivatives, their photoresist compositions and the methods are ideal for fine pattern processing using, for example, ultraviolet radiation, beyond extreme ultraviolet radiation, extreme ultraviolet radiation, X-rays and charged particle rays.
摘要:
The use as a resist material of a methanofullerene derivative having a plurality of open-ended addends, and to a method for forming a patterned resist layer on a substrate using the methanofullerene derivatives. The methanofullerene derivatives can be represented by the formal C2x(CR1R2)m where x is at least 10, m is at least 2, each addend represented by CR1R2 is the same or different, and wherein each R1 and R2 is each a monovalent organic group, or a divalent organic group which forms a ring structure by being joined to the fullerene shell, or where both R1 and R2 of an addend are divalent groups, they may be mutually joined to form a ring structure, save that at least two of R1 or two of R2 are monovalent, or a mixture of such derivatives. The use of any methanofullerene derivative which has been chemically amplified for formation of a patterned resist layer. The essential step of the method is forming a coating layer comprising the methanofullerene derivative on the substrate surface, the methanofullerene derivative being chemically amplified by including in the coating layer at least one additional component which increases the sensitivity of the exposed layer to actinic radiation which is subsequently used to pattern the layer.
摘要翻译:作为具有多个开口加数的亚甲基富勒烯衍生物的抗蚀剂材料的用途,以及使用甲基富勒烯衍生物在基板上形成图案化抗蚀剂层的方法。 亚甲基富勒烯衍生物可以通过其中x在下面的形式C 2X(CR 1 R 2,R 2) 至少10,m为至少2,由CR 1 R 2 2 N表示的每个加成物相同或不同,并且其中每个R 1和 R 2 2各自是一价有机基团,或通过与富勒烯壳体接合而形成环结构的二价有机基团,或者R 1和R 2均为 > 2 SUB>是二价基团,它们可以相互连接以形成环结构,除了R 1至少两个或R 2 2中的两个 >是单价或这些衍生物的混合物。 使用已化学放大以形成图案化抗蚀剂层的任何甲基富勒烯衍生物。 该方法的基本步骤是在基材表面上形成包含甲基富勒烯衍生物的涂层,通过在涂层中包括至少一种附加组分将化学扩增的亚甲基富勒烯衍生物增加曝光层对光化辐射的敏感性, 随后用于对图层进行图案化。
摘要:
Certain methanofullerene derivatives are described, having side chains with acid-labile protecting groups. The methanofullerene derivatives may find application as photoresist materials, and particularly as positive-tone photoresists.