Exhaust buildup monitoring in semiconductor processing
    1.
    发明申请
    Exhaust buildup monitoring in semiconductor processing 审中-公开
    半导体加工中的排气监测

    公开(公告)号:US20070189356A1

    公开(公告)日:2007-08-16

    申请号:US11352919

    申请日:2006-02-13

    IPC分类号: G01K3/00 G01N25/00

    摘要: A system is provided for determining when the buildup of deposits in an exhaust line of a semiconductor wafer processing machine requires cleaning. Deposits in vacuum exhaust lines build up to where they eventually fail structurally, releasing particles that can contaminate equipment and processes. The time at which cleaning is required is often unpredictable, while frequent or early cleaning to avoid waiting too long unnecessarily reduces productivity. The invention provides for the monitoring of thermal properties on the inside of an exhaust line wall. Deposits cause changes in the monitored thermal properties. A heater and thermocouple can be used, for example, and the temperature at the thermocouple that is due to heat flow from the heater is measured. Buildups in the exhaust line affect heat flow to the sensor and are measurable as a decline in sensed temperature. Structural failure of the coating in the exhaust line leads to the eventual leveling off and fluctuation of the temperature measurement. Comparison or correlation of the sensed thermal property or a profile thereof with data stored under known exhaust line conditions is used to determine the condition of the exhaust line and signal when cleaning is most appropriate.

    摘要翻译: 提供了一种系统,用于确定半导体晶片加工机的排气管线中的沉积物的积聚何时需要清洁。 真空排气管中的沉积物最终到达最终结构失效的地方,释放可能污染设备和工艺的颗粒。 需要清洁的时间通常是不可预知的,而频繁或早期清洁以避免等待太长时间不必要地降低生产率。 本发明提供了对排气管壁内部的热性能的监测。 沉积物导致监测的热性能发生变化。 例如,可以使用加热器和热电偶,并测量热电偶因加热器的热量而导致的温度。 排气管道中的积聚会影响到传感器的热流,并且可以随着感测温度的下降而被测量。 排气管中涂层的结构破坏导致最终的平整和温度测量的波动。 使用感测的热性质或其轮廓与在已知排气管线条件下存储的数据进行比较或相关性来确定排气管线的状况和清洁最合适时的信号。