公开(公告)号：US07460579B2

公开(公告)日：2008-12-02

申请号：US11159350

申请日：2005-06-23

申请人： Jong Ik Park ,  Yu Seung Kim ,  Ki Won Moon ,  Hye Ran Oh

发明人： Jong Ik Park ,  Yu Seung Kim ,  Ki Won Moon ,  Hye Ran Oh

IPC分类号： H01S5/00

CPC分类号： H01S5/4025 ,  H01S3/08086 ,  H01S3/0809

摘要： A semiconductor laser device comprises: a substrate having a top surface divided into a first region and a second region; a high-output LD including a first conductivity-type clad layer, an active layer, and a second conductivity-type clad layer including an upper portion having a first ridge structure, sequentially formed on the first region of the substrate; and a low-output LD including a first conductivity-type clad layer, an active layer, and a second conductivity-type clad layer including an upper portion having a second ridge structure, sequentially formed on the second region of the substrate, wherein the first and second ridge structures are formed in such a manner that they are extended to both ends opposed to each other, the first ridge structure is bent at two or more bending positions, and the second ridge structure is rectilinear.

摘要翻译： 半导体激光装置包括：基板，其具有分为第一区域和第二区域的顶表面; 包括依次形成在所述基板的所述第一区域上的包括具有第一脊结构的上部的第一导电型覆盖层，有源层和第二导电型覆盖层的高输出LD， 以及依次形成在所述基板的第二区域上的包括第一导电型覆盖层，有源层和包括具有第二脊结构的上部的第二导电型覆盖层的低输出LD，其中， 并且第二脊结构形成为使得它们彼此相对延伸到两个端部，第一脊结构在两个或更多个弯曲位置弯曲，并且第二脊结构是直线的。