公开(公告)号：US12107383B2

公开(公告)日：2024-10-01

申请号：US17296140

申请日：2019-10-16

Applicant: SHENZHEN LIGHTING INSTITUTE

Inventor： Chao-Chen Cheng ,  Anh Chuong Tran

IPC: H01S5/024 ,  H01S5/02 ,  H01S5/028 ,  H01S5/40

CPC classification number: H01S5/0202 ,  H01S5/02469 ,  H01S5/028 ,  H01S5/4025

Abstract: A semiconductor laser and a fabrication method therefor. The method comprises: providing a heat sink motherboard, and cutting the heat sink motherboard to form a plurality of heat sink substrates (300) (S11); providing an epitaxial wafer (200) (S12); bonding the plurality of heat sink substrates (300) to the epitaxial wafer (200) in an array to form a plurality of gaps parallel to the direction of resonant cavities (210) and perpendicular to the direction of the resonant cavities (210) (S13); dividing the epitaxial wafer (200) along the gaps to obtain a plurality of laser chips (S14); and stacking the plurality of laser chips, and coating the plurality of stacked laser chips to form a plurality of semiconductor lasers (S15).

公开(公告)号：US12100932B2

公开(公告)日：2024-09-24

申请号：US15580900

申请日：2016-06-07

Applicant: Jabil Inc.

Inventor： Tony Gijbels

IPC: H01S5/00 ,  H01S5/06 ,  H01S5/0683 ,  H01S5/40

CPC classification number: H01S5/0683 ,  H01S5/0021 ,  H01S5/0087 ,  H01S5/0617 ,  H01S5/4025

Abstract: A laser-based light source (10), comprising: at least one first arrangement (100), for generating light (500), comprising: a laser device (200) for generating laser light (510) of a predetermined laser wavelength and emitting this laser light as a laser beam; and a light-conversion device (210) for converting at least part of the laser light into converted light (520); a second arrangement (110)), for generating at least a first signal (300) and a second signal (310), representative for a different part of the spectrum of said light, from direct measurements on a portion of said light (500); and a controller (120) for receiving the first signal and the second signal, for determining a safe-to-operate parameter, based on the first signal and the second signal, and for controlling the operation of the laser-device based on a comparison between the safe-to-operate parameter and at least one predefined threshold.

公开(公告)号：US12085592B2

公开(公告)日：2024-09-10

申请号：US17413499

申请日：2019-12-06

Applicant: ams AG

Inventor： Rahim Akbari-Dilmaghani

IPC: G01R19/04 ,  G01R19/25 ,  G01S7/48 ,  G01S7/4861 ,  H01S5/042 ,  H01S5/40

CPC classification number: G01R19/04 ,  G01R19/2506 ,  G01S7/4804 ,  G01S7/4861 ,  H01S5/0428 ,  H01S5/4025

Abstract: An apparatus and method for current peak detection. The apparatus includes a pulse laser diode array, a sense resistor, a capacitive voltage divider (CVD) electrically coupled to the pulse laser diode array, a first current rectifier, a second current rectifier, a first current peak detector, a second current peak detector, an analog-to-digital converter (ADC) operable to convert the analog outputs from each current peak detector to a digital output signal, and a digital signal processing (DSP) unit operable to detect, from the digital output signal, a current peak pulse at the top and the bottom of the sense resistor.

公开(公告)号：US12068574B2

公开(公告)日：2024-08-20

申请号：US17377832

申请日：2021-07-16

Applicant: Bryan Lochman ,  Matthew Sauter ,  Bien Chann ,  Michael Deutsch

Inventor： Bryan Lochman ,  Matthew Sauter ,  Bien Chann ,  Michael Deutsch

IPC: H01S5/024 ,  H01S5/40 ,  H01S5/02355

CPC classification number: H01S5/02423 ,  H01S5/4025 ,  H01S5/02355

Abstract: In various embodiments, a laser emitter such as a diode bar is cooled during operation via jets of cooling fluid formed by ports in a cooler on which the laser emitter is positioned. The jets strike an impingement surface of the cooler that is thermally coupled to the laser emitter but prevents direct contact between the cooling fluid and the laser emitter itself.

公开(公告)号：US20240266806A1

公开(公告)日：2024-08-08

申请号：US18599033

申请日：2024-03-07

Applicant: INNOLIGHT TECHNOLOGY (SUZHOU) LTD.

Inventor： Xuezhe ZHENG ,  Yinchao DU ,  Min TENG

IPC: H01S5/40 ,  H01S5/042 ,  H01S5/10

CPC classification number: H01S5/4025 ,  H01S5/0425 ,  H01S5/1032

Abstract: A laser capable of reducing the difficulty of a wavelength tuning process, a fabrication method therefor, and a laser device. The laser comprises: an active light-emitting structure used for emitting light; a silicon-based structure which is bonded to the active light-emitting structure, and which comprises a silicon-based waveguide and at least two composite gratings, wherein the composite gratings are opposite to the active light-emitting structure and are formed in the silicon-based waveguide. Each composite grating comprises one primary grating and a plurality of secondary gratings, the secondary gratings are periodically arranged to form the primary grating, and the primary gratings in at least a portion of the composite gratings have different grating periods from that of the primary gratings in other composite gratings. The silicon-based structure and the active light-emitting structure form at least two laser units, and each laser unit corresponds to one composite grating.

公开(公告)号：US11990838B2

公开(公告)日：2024-05-21

申请号：US17560385

申请日：2021-12-23

Applicant: ams-OSRAM International GmbH

Inventor： Ann Russell ,  Joseph Gasiewicz ,  Syedhossein Mousavian ,  Somayeh Abnavi ,  Hubert Halbritter ,  Steffen Strauss

IPC: G01S7/484 ,  H01S5/042 ,  H01S5/40 ,  H02M3/158

CPC classification number: H02M3/158 ,  G01S7/484 ,  H01S5/0428 ,  H01S5/4025

Abstract: A driver circuit may include a first inductor with a first terminal coupled to a first voltage terminal and a first switch with a first and a second terminal. The first terminal of the first switch is coupled to a second terminal of the first inductor via a first node and the second terminal of the first switch is coupled to a second voltage terminal. Moreover, the driver circuit may include a diode with a first terminal coupled to the first node, an output terminal, and a first capacitor with a first electrode coupled to a second terminal of the diode and a second electrode coupled to the output terminal.

公开(公告)号：US20240097405A1

公开(公告)日：2024-03-21

申请号：US18470945

申请日：2023-09-20

Applicant: California Institute of Technology

Inventor： Aroutin Khachaturian ,  David Baum ,  Seyed Ali Hajimiri

IPC: H01S5/40 ,  G01S7/4911 ,  H01S5/026 ,  H01S5/06

CPC classification number: H01S5/4025 ,  G01S7/4911 ,  H01S5/026 ,  H01S5/0618

Abstract: An integrated photonic architecture for coherent signal generation and processing. This architecture can enhance coherent transceiver performance for many applications, including remote sensing, LiDAR, high-speed data communication, and high performance computing.

公开(公告)号：US20240035822A1

公开(公告)日：2024-02-01

申请号：US18377064

申请日：2023-10-05

Applicant: Stanley Black & Decker Inc.

Inventor： Jia Yong JIANG ,  Noreen M. O'SULLIVAN ,  Wang SHUANG

IPC: G01C15/00 ,  H01S5/00 ,  H01S5/062 ,  H01S5/042

CPC classification number: G01C15/004 ,  H01S5/0071 ,  H01S5/06216 ,  H01S5/042 ,  H01S5/005 ,  H01S5/4025

Abstract: A laser beam generating device includes a housing a first laser diode which generates a visible first output beam which projects outside of the housing onto a surface and a second laser diode which generates a visible second output beam which projects outside of the housing onto the surface. The laser beam generating device has a first mode in which the first laser diode and the second laser diode are both on. In the first mode, the first laser diode is operated at a first duty cycle the second laser diode is operated at a second duty cycle. The first duty cycle and the second duty cycle are staggered.

公开(公告)号：US11876348B2

公开(公告)日：2024-01-16

申请号：US17032673

申请日：2020-09-25

Applicant: Apple Inc.

Inventor： Mariam Sadaka ,  Date J. Noorlag

IPC: H01S5/183 ,  H01S5/42 ,  H01S5/40 ,  H01S5/22

CPC classification number: H01S5/18313 ,  H01S5/18327 ,  H01S5/18344 ,  H01S5/2205 ,  H01S5/4025 ,  H01S5/423 ,  H01S2301/176

Abstract: Trenched VCSEL emitter structures are described. In an embodiment, an emitter structure includes a cluster of non-uniformly distributed emitters in which each emitter includes an inside mesa trench and an oxidized portion of an oxide aperture layer extending from the inside mesa trench. An outside moat trench is located adjacent the inside mesa trench and is formed to a depth past the oxide aperture layer.

公开(公告)号：US11876345B2

公开(公告)日：2024-01-16

申请号：US17015001

申请日：2020-09-08

Applicant: HEWLETT PACKARD ENTERPRISE DEVELOPMENT LP

Inventor： Di Liang ,  Chih C. Shih ,  Kevin B. Leigh ,  Geza Kurczveil ,  Marco Fiorentino

IPC: H01S5/024 ,  H01S5/0237 ,  H01S5/0239 ,  H01S5/187 ,  H01S5/40 ,  H01S5/00

CPC classification number: H01S5/02469 ,  H01S5/0237 ,  H01S5/0239 ,  H01S5/02476 ,  H01S5/187 ,  H01S5/0085 ,  H01S5/4025

Abstract: Techniques and systems for a semiconductor laser, namely a grating-coupled surface-emitting (GCSE) comb laser, having thermal management for facilitating dissipation of heat, integrated thereon. The thermal management is structured in manner that prevents deformation or damage to the GCSE laser chips included in the semiconductor laser implementation. The disclosed thermal management elements integrated in the laser can include: heat sinks; support bars; solder joints; thermal interface material (TIM); silicon vias (TSV); and terminal conductive sheets. Support bars, for example, having the GCSE laser chip positioned between the bars and having a height that is higher than a thickness of the GCSE laser chip. Accordingly, the heat sink can be placed on top of the support bars such that heat is dissipated from the GCSE laser chip, and the heat sink is separated from directed contact with the GCSE laser chip due to the height of the support bars.