公开(公告)号：US20080224190A1

公开(公告)日：2008-09-18

申请号：US12046965

申请日：2008-03-12

申请人： Jong-Min Lee ,  Jong-Cheol Shin ,  Doo-Cheol Park ,  Jeong-Hoon Koo ,  Hee-Yong Lim

发明人： Jong-Min Lee ,  Jong-Cheol Shin ,  Doo-Cheol Park ,  Jeong-Hoon Koo ,  Hee-Yong Lim

IPC分类号： H01L31/113 ,  H01L21/00

CPC分类号： H01L27/14609 ,  H01L27/1463 ,  H01L27/14689

摘要： An image sensor with sufficient photoelectric conversion capacity and enhanced reliability and a method of fabricating the same, in which the image sensor includes a bare substrate; an epitaxial layer disposed on the bare substrate and including a first impurity distribution region of a first conductivity type, which is formed on the bare substrate, and a second impurity distribution region of a second conductivity type, which is formed on the first impurity distribution region; and a charge collection well formed within the epitaxial layer and at least partially doped with third impurities of the second conductivity type, wherein the charge collection well occupies the first impurity distribution region and the second impurity distribution region and represents the second conductivity type as a whole.

摘要翻译： 具有足够的光电转换能力和增强的可靠性的图像传感器及其制造方法，其中图像传感器包括裸衬底; 外延层，设置在所述裸基板上，并且包括形成在所述裸基板上的第一导电类型的第一杂质分布区域和形成在所述第一杂质分布区域上的第二导电类型的第二杂质分布区域 ; 以及在所述外延层内形成并且至少部分地掺杂有所述第二导电类型的第三杂质的电荷收集阱，其中所述电荷收集阱占据所述第一杂质分布区域和所述第二杂质分布区域，并且表示作为整体的第二导电类型 。