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    CMOS image sensors and methods of manufacturing the same
    1.
    发明授权
    CMOS image sensors and methods of manufacturing the same 有权
    CMOS图像传感器及其制造方法

    公开(公告)号：US07875491B2

    公开(公告)日：2011-01-25

    申请号：US12010349

    申请日：2008-01-24

    申请人： Doo-cheol Park ,  Jung-hyeon Kim ,  Jun-young Lee

    发明人： Doo-cheol Park ,  Jung-hyeon Kim ,  Jun-young Lee

    IPC分类号： H01L21/00

    CPC分类号： H01L27/14609 ,  H01L27/14645 ,  H01L27/14689

    摘要： A complementary metal-oxide-semiconductor image sensor may include: a semiconductor substrate; a photodiode formed on a first portion of the semiconductor substrate; a transfer gate formed on the semiconductor substrate, near the photodiode, to transfer optical charges accumulated in the photodiode; a floating diffusion area formed on a second portion of the semiconductor substrate, on an opposite side of the transfer gate from the photodiode, to accommodate the optical charges; and/or a channel area formed under the transfer gate and contacting a side of the photodiode to transfer the optical charges. The transfer gate may be formed, at least in part, of transparent material. A method of manufacturing a complimentary metal-oxide-semiconductor image sensor may include: forming the photodiode; forming the floating diffusion area, separate from the photodiode; and/or forming the transfer gate, near the photodiode, to transfer optical charges accumulated in the photodiode.

    摘要翻译： 互补金属氧化物半导体图像传感器可以包括：半导体衬底; 形成在所述半导体衬底的第一部分上的光电二极管; 在所述半导体衬底上形成的传输门，在所述光电二极管附近，以传输光电二极管中累积的光电荷; 浮动扩散区，形成在半导体衬底的第二部分上，在与光电二极管的传输栅极相对的一侧，以适应光电荷; 和/或形成在传输门下方并且与光电二极管的一侧接触以传送光电荷的沟道区。 传输门可以至少部分地由透明材料形成。 互补金属氧化物半导体图像传感器的制造方法可以包括：形成光电二极管; 形成与光电二极管分离的浮动扩散区域; 和/或在光电二极管附近形成传输门，以转移积聚在光电二极管中的光电荷。

    CMOS image sensors and methods of manufacturing the same
    4.
    发明申请
    CMOS image sensors and methods of manufacturing the same 有权
    CMOS图像传感器及其制造方法

    公开(公告)号：US20090179239A1

    公开(公告)日：2009-07-16

    申请号：US12010349

    申请日：2008-01-24

    申请人： Doo-cheol Park ,  Jung-hyeon Kim ,  Jun-young Lee

    发明人： Doo-cheol Park ,  Jung-hyeon Kim ,  Jun-young Lee

    IPC分类号： H01L27/146 ,  H01L21/28

    CPC分类号： H01L27/14609 ,  H01L27/14645 ,  H01L27/14689

    摘要： A complementary metal-oxide-semiconductor image sensor may include: a semiconductor substrate; a photodiode formed on a first portion of the semiconductor substrate; a transfer gate formed on the semiconductor substrate, near the photodiode, to transfer optical charges accumulated in the photodiode; a floating diffusion area formed on a second portion of the semiconductor substrate, on an opposite side of the transfer gate from the photodiode, to accommodate the optical charges; and/or a channel area formed under the transfer gate and contacting a side of the photodiode to transfer the optical charges. The transfer gate may be formed, at least in part, of transparent material. A method of manufacturing a complimentary metal-oxide-semiconductor image sensor may include: forming the photodiode; forming the floating diffusion area, separate from the photodiode; and/or forming the transfer gate, near the photodiode, to transfer optical charges accumulated in the photodiode.

    摘要翻译： 互补金属氧化物半导体图像传感器可以包括：半导体衬底; 形成在所述半导体衬底的第一部分上的光电二极管; 在所述半导体衬底上形成的传输门，在所述光电二极管附近，以传输光电二极管中累积的光电荷; 形成在半导体衬底的第二部分上的浮动扩散区，在与光电二极管的传输栅极相反的一侧，以适应光电荷; 和/或形成在传输门下方并且与光电二极管的一侧接触以传送光电荷的沟道区。 传输门可以至少部分地由透明材料形成。 互补金属氧化物半导体图像传感器的制造方法可以包括：形成光电二极管; 形成与光电二极管分离的浮动扩散区域; 和/或在光电二极管附近形成传输门，以转移积聚在光电二极管中的光电荷。

    Method of fabricating microlens, and depth sensor including microlens
    6.
    发明授权
    Method of fabricating microlens, and depth sensor including microlens 有权
    微透镜的制造方法，以及微透镜的深度传感器

    公开(公告)号：US09029785B2

    公开(公告)日：2015-05-12

    申请号：US13407879

    申请日：2012-02-29

    申请人： Doo Cheol Park ,  Seung Hyuk Chang ,  Myung-Sun Kim ,  Won Joo Kim ,  Ju Hwan Jung ,  Seung Hoon Lee ,  Kwang-Min Lee ,  Hyoung Soo Ko

    发明人： Doo Cheol Park ,  Seung Hyuk Chang ,  Myung-Sun Kim ,  Won Joo Kim ,  Ju Hwan Jung ,  Seung Hoon Lee ,  Kwang-Min Lee ,  Hyoung Soo Ko

    IPC分类号： G02B13/00 ,  G02B3/00 ,  G02B13/14 ,  G03F7/40 ,  G02B23/14

    CPC分类号： G02B3/0018 ,  G02B3/0056 ,  G02B13/14 ,  G02B23/14 ,  G03F7/40

    摘要： A method of fabricating a microlens includes forming layer of photoresist on a substrate, patterning the layer of photoresist, and then reflowing the photoresist pattern. The layer of photoresist is formed by coating the substrate with liquid photoresist whose viscosity is 150 to 250 cp. A depth sensor includes a substrate and photoelectric conversion elements at an upper portion of the substrate, a metal wiring section disposed on the substrate, an array of the microlenses for focusing incident light as beams onto the photoelectric conversion elements and which beams avoid the wirings of the metal wiring section. The depths sensor also includes a layer presenting a flat upper surface on which the microlenses are formed. The layer may be a dedicated planarization layer or an IR filter, interposed between the microlenses and the metal wiring section.

    摘要翻译： 制造微透镜的方法包括在衬底上形成光致抗蚀剂层，图案化光致抗蚀剂层，然后回流光致抗蚀剂图案。 通过用粘度为150至250cp的液体光致抗蚀剂涂覆基底来形成光致抗蚀剂层。 深度传感器包括基板和在基板的上部的光电转换元件，设置在基板上的金属布线部分，用于将入射光聚焦到光电转换元件上的微透镜阵列，并且这些光束避免了布线 金属配线部。 深度传感器还包括呈现其上形成有微透镜的平坦上表面的层。 该层可以是介于微透镜和金属布线部之间的专用平坦化层或IR滤光器。

    METHOD OF FABRICATING MICROLENS, AND DEPTH SENSOR INCLUDING MICROLENS
    8.
    发明申请
    METHOD OF FABRICATING MICROLENS, AND DEPTH SENSOR INCLUDING MICROLENS 有权
    微生物的制备方法，以及包含微生物的深度传感器

    公开(公告)号：US20120224028A1

    公开(公告)日：2012-09-06

    申请号：US13407879

    申请日：2012-02-29

    申请人： DOO CHEOL PARK ,  SEUNG HYUK CHANG ,  MYUNG-SUN KIM ,  WON JOO KIM ,  JU HWAN JUNG ,  SEUNG HOON LEE ,  KWANG-MIN LEE ,  HYOUNG SOO KO

    发明人： DOO CHEOL PARK ,  SEUNG HYUK CHANG ,  MYUNG-SUN KIM ,  WON JOO KIM ,  JU HWAN JUNG ,  SEUNG HOON LEE ,  KWANG-MIN LEE ,  HYOUNG SOO KO

    IPC分类号： H04N15/00 ,  G03F7/20 ,  G02B13/14 ,  H01J40/14 ,  G02B3/00

    CPC分类号： G02B3/0018 ,  G02B3/0056 ,  G02B13/14 ,  G02B23/14 ,  G03F7/40

    摘要： A method of fabricating a microlens includes forming layer of photoresist on a substrate, patterning the layer of photoresist, and then reflowing the photoresist pattern. The layer of photoresist is formed by coating the substrate with liquid photoresist whose viscosity is 150 to 250 cp. A depth sensor includes a substrate and photoelectric conversion elements at an upper portion of the substrate, a metal wiring section disposed on the substrate, an array of the microlenses for focusing incident light as beams onto the photoelectric conversion elements and which beams avoid the wirings of the metal wiring section. The depths sensor also includes a layer presenting a flat upper surface on which the microlenses are formed. The layer may be a dedicated planarization layer or an IR filter, interposed between the microlenses and the metal wiring section.

    摘要翻译： 制造微透镜的方法包括在衬底上形成光致抗蚀剂层，图案化光致抗蚀剂层，然后回流光致抗蚀剂图案。 通过用粘度为150至250cp的液体光致抗蚀剂涂覆基底来形成光致抗蚀剂层。 深度传感器包括基板和在基板的上部的光电转换元件，设置在基板上的金属布线部分，用于将入射光聚焦到光电转换元件上的微透镜阵列，并且这些光束避免了布线 金属配线部。 深度传感器还包括呈现其上形成有微透镜的平坦上表面的层。 该层可以是介于微透镜和金属布线部之间的专用平坦化层或IR滤光器。

    SHARED-PIXEL-TYPE IMAGE SENSOR AND METHOD OF FABRICATING THE SAME
    10.
    发明申请
    SHARED-PIXEL-TYPE IMAGE SENSOR AND METHOD OF FABRICATING THE SAME 有权
    共享像素型图像传感器及其制造方法

    公开(公告)号：US20090261443A1

    公开(公告)日：2009-10-22

    申请号：US12416703

    申请日：2009-04-01

    申请人： Hyun-Pil Noh ,  Duck-Hyung Lee ,  Doo-Cheol Park

    发明人： Hyun-Pil Noh ,  Duck-Hyung Lee ,  Doo-Cheol Park

    IPC分类号： H01L27/146

    CPC分类号： H01L27/14603 ,  H01L27/14636 ,  H01L27/14641 ,  H01L27/14643

    摘要： A shared-pixel-type image sensor including a shared floating diffusion region formed in a semiconductor substrate; first and second adjacent photoelectric conversion regions sharing the floating diffusion region; two transmission elements that alternately transfer electric charges accumulated in the first and second photoelectric conversion regions to the shared floating diffusion region, respectively; a drive element for outputting the electric charges of the shared floating diffusion region; a first contact formed on the floating diffusion region; a second contact formed on the drive element; and a local wire that connects the first and second contacts to electrically connect the floating diffusion region and the drive element, wherein the local wire is formed at a level lower than respective top surfaces of the first and second contacts.

    摘要翻译： 共享像素型图像传感器，包括形成在半导体衬底中的共享浮动扩散区域; 第一和第二相邻的光电转换区域共享浮动扩散区域; 两个传输元件，分别将累积在第一和第二光电转换区域中的电荷交替地传送到共享浮动扩散区域; 用于输出共享浮动扩散区域的电荷的驱动元件; 形成在所述浮动扩散区上的第一接触; 形成在所述驱动元件上的第二触点; 以及连接第一和第二触点以电连接浮动扩散区域和驱动元件的局部电线，其中局部电线形成在比第一和第二触点的相应顶表面低的水平处。