公开(公告)号：US09917158B2

公开(公告)日：2018-03-13

申请号：US14942193

申请日：2015-11-16

申请人： Jorge A. Kittl ,  Borna Josip Obradovic ,  Robert Christopher Bowen ,  Mark S. Rodder

发明人： Jorge A. Kittl ,  Borna Josip Obradovic ,  Robert Christopher Bowen ,  Mark S. Rodder

IPC分类号： H01L29/66 ,  H01L29/267 ,  H01L29/78 ,  H01L21/285 ,  H01L29/45 ,  H01L29/08

CPC分类号： H01L29/267 ,  H01L21/28575 ,  H01L29/0847 ,  H01L29/452 ,  H01L29/66795 ,  H01L29/785

摘要： A semiconductor device can include a channel region with a first semiconductor material for a majority carrier in the channel region during operation (on state) of the device and a metal contact. A source/drain region can include a semiconductor material alloy including a second semiconductor material and at least one heterojunction located between the metal contact and the channel region, wherein the heterojunction forms a band-edge offset for the majority carrier that is less than or equal to about 0.2 eV.

公开(公告)号：US20160079372A1

公开(公告)日：2016-03-17

申请号：US14942193

申请日：2015-11-16

申请人： Jorge A. Kittl ,  Borna Josip Obradovic ,  Robert Christopher Bowen ,  Mark S. Rodder

发明人： Jorge A. Kittl ,  Borna Josip Obradovic ,  Robert Christopher Bowen ,  Mark S. Rodder

IPC分类号： H01L29/267 ,  H01L29/78

CPC分类号： H01L29/267 ,  H01L21/28575 ,  H01L29/0847 ,  H01L29/452 ,  H01L29/66795 ,  H01L29/785

摘要： A semiconductor device can include a channel region with a first semiconductor material for a majority carrier in the channel region during operation (on state) of the device and a metal contact. A source/drain region can include a semiconductor material alloy including a second semiconductor material and at least one heterojunction located between the metal contact and the channel region, wherein the heterojunction forms a band-edge offset for the majority carrier that is less than or equal to about 0.2 eV.

摘要翻译： 半导体器件可以包括具有第一半导体材料的沟道区域，用于在器件的操作（开状态）和金属接触处的沟道区域中的多数载流子。 源极/漏极区域可以包括半导体材料合金，其包括第二半导体材料和位于金属触点和沟道区域之间的至少一个异质结，其中异质结形成小于或等于多数载流子的带边偏移 至约0.2eV。