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1.发明申请公开(公告)号：US20090227114A1
公开(公告)日：2009-09-10
申请号：US12042584
申请日：2008-03-05
IPC分类号： H01L21/306
CPC分类号： H01L31/02363 , H01L21/67086 , Y02E10/50
摘要： A process for etching the surfaces of semiconductor substrates utilizes a texturing tank which introduces a process fluid through a circulating system. The process fluid is heated to a desired temperature and maintained at a desired concentration prior to entering a processing area where laminar flow is produced to more quickly and uniformly roughen the surface of semiconductor substrates. The texturing tank permits removal of bubbles and eliminates temperature stratification in the processing area.
摘要翻译： 用于蚀刻半导体衬底的表面的工艺利用了通过循环系统引入工艺流体的纹理槽。 将工艺流体加热到期望的温度并在进入生产层流的加工区域之前保持所需的浓度以更快速且均匀地粗糙化半导体衬底的表面。 纹理槽允许去除气泡并消除处理区域中的温度分层。
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2.发明授权公开(公告)号：US08894803B2
公开(公告)日：2014-11-25
申请号：US12042584
申请日：2008-03-05
IPC分类号： H01L21/306 , H01L31/0236 , H01L21/67
CPC分类号： H01L31/02363 , H01L21/67086 , Y02E10/50
摘要： A process for etching the surfaces of semiconductor substrates utilizes a texturing tank which introduces a process fluid through a circulating system. The process fluid is heated to a desired temperature and maintained at a desired concentration prior to entering a processing area where laminar flow is produced to more quickly and uniformly roughen the surface of semiconductor substrates. The texturing tank permits removal of bubbles and eliminates temperature stratification in the processing area.
摘要翻译： 用于蚀刻半导体衬底的表面的工艺利用了通过循环系统引入工艺流体的纹理槽。 将工艺流体加热到期望的温度并在进入生产层流的加工区域之前保持所需的浓度以更快速且均匀地粗糙化半导体衬底的表面。 纹理槽允许去除气泡并消除处理区域中的温度分层。
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