公开(公告)号：US06184562B2

公开(公告)日：2001-02-06

申请号：US09171677

申请日：1999-05-03

申请人： Josef Kemmer ,  Gerhard Lutz ,  Rainer Richter ,  Lothar Struder ,  Ladislav Andricek ,  Thomas Gebhart

发明人： Josef Kemmer ,  Gerhard Lutz ,  Rainer Richter ,  Lothar Struder ,  Ladislav Andricek ,  Thomas Gebhart

IPC分类号： H01L2978

CPC分类号： H01L31/1185 ,  H01L31/115

摘要： A strip detector for detecting ionizing particles and/or radiation, consisting of a silicon substrate which, at least on one substrate surface thereof, provides for n-doped zones spaced from each other as strips and voltage supply regions as well as a p-doped isolation zone between the n-doped zones, and including a first isolator layer as well as metal strips disposed above the n-doped zones, wherein immediately above the first isolated layer there is at least one further isolator layer provided and that at least one of the isolator layers is discontinuous in its projection above the intermediate zone of the two adjacent n-doped zones, and wherein the p-doped isolation zone presents a lateral distribution of concentration of the p-type doping material such that in the zone below the discontinuity of the discontinuous isolator layer, a higher concentration of doping material is present than in the isolation regions immediately adjacent to the n-doped zones.

摘要翻译： 一种用于检测电离颗粒和/或辐射的条带检测器，由硅衬底组成，硅衬底至少在其一个衬底表面上提供彼此间隔开的带状和电压供应区域的n掺杂区域以及p掺杂 隔离区，并且包括第一隔离层以及设置在n掺杂区上方的金属条，其中在第一隔离层的正上方提供至少一个另外的隔离层，并且至少一个 隔离层在其两个相邻n掺杂区域的中间区域上方的突起中不连续，并且其中p掺杂隔离区域呈现p型掺杂材料浓度的横向分布，使得在不连续区域内的区域 的不连续隔离层，存在比在n掺杂区域紧邻的隔离区域更高的掺杂材料的浓度。

公开(公告)号：US07586136B2

公开(公告)日：2009-09-08

申请号：US10597504

申请日：2005-01-17

申请人： Peter Lechner ,  Gerhard Lutz ,  Rainer Richter ,  Lothar Struder

发明人： Peter Lechner ,  Gerhard Lutz ,  Rainer Richter ,  Lothar Struder

IPC分类号： H01L27/00

CPC分类号： H01L31/101

摘要： The invention relates to a semiconductor structure, especially for use in a semiconductor detector. The semiconductor structure includes a weakly doped semiconductor substrate (HK) of a first or second doping type, a highly doped drain region (D) of a second doping type, located on a first surface of the semiconductor substrate (HK), a highly doped source region (S) of the second doping type, located on the first surface of the semiconductor substrate (HK), a duct (K) extending between the source region (S) and the drain region (D), a doped inner gate region (IG) of the first doping type, which is at least partially located below the duct (K), and a blow-out contact (CL) for removing charge carriers from the inner gate region (IG). According to the invention, the inner gate region (IG) extends in the semiconductor substrate (HK) at least partially up to the blow-out contact (CL) and the blow-out contact (CL) is located on the drain end relative to the source region (S).

摘要翻译： 本发明涉及一种特别用于半导体检测器的半导体结构。 该半导体结构包括第一或第二掺杂类型的弱掺杂半导体衬底（HK），位于半导体衬底（HK）的第一表面上的第二掺杂类型的高掺杂漏区（D），高掺杂 位于半导体衬底（HK）的第一表面上的第二掺杂类型的源极区（S），在源极区（S）和漏极区（D）之间延伸的导管（K），掺杂的内部栅极区域 至少部分地位于管道（K）下方的第一掺杂类型的（IG）和用于从内部栅极区域（IG）去除电荷载流子的吹出接点（CL）。 根据本发明，内部栅极区域（IG）在半导体衬底（HK）中至少部分地延伸到吹出触点（CL），并且吹出触点（CL）相对于漏极端部位于漏极端 源区（S）。

公开(公告)号：US20080230811A1

公开(公告)日：2008-09-25

申请号：US10597504

申请日：2005-01-17

申请人： Peter Lechner ,  Gerhard Lutz ,  Rainer Richter ,  Lothar Struder

发明人： Peter Lechner ,  Gerhard Lutz ,  Rainer Richter ,  Lothar Struder

IPC分类号： H01L29/78

CPC分类号： H01L31/101

摘要： The invention relates to a semiconductor structure, especially for use in a semiconductor detector. The semiconductor structure includes a weakly doped semiconductor substrate (HK) of a first or second doping type, a highly doped drain region (D) of a second doping type, located on a first surface of the semiconductor substrate (HK), a highly doped source region (S) of the second doping type, located on the first surface of the semiconductor substrate (HK), a duct (K) extending between the source region (S) and the drain region (D), a doped inner gate region (IG) of the first doping type, which is at least partially located below the duct (K), and a blow-out contact (CL) for removing charge carriers from the inner gate region (IG). According to the invention, the inner gate region (IG) extends in the semiconductor substrate (HK) at least partially up to the blow-out contact (CL) and the blow-out contact (CL) is located on the drain end relative to the source region (S).

摘要翻译： 本发明涉及一种特别用于半导体检测器的半导体结构。 该半导体结构包括第一或第二掺杂类型的弱掺杂半导体衬底（HK），位于半导体衬底（HK）的第一表面上的第二掺杂类型的高掺杂漏区（D），高掺杂 位于半导体衬底（HK）的第一表面上的第二掺杂类型的源极区（S），在源极区（S）和漏极区（D）之间延伸的导管（K），掺杂的内部栅极区域 至少部分地位于管道（K）下方的第一掺杂类型的（IG）和用于从内部栅极区域（IG）去除电荷载流子的吹出接点（CL）。 根据本发明，内部栅极区域（IG）在半导体衬底（HK）中至少部分地延伸到吹出触点（CL），并且吹出触点（CL）相对于漏极端部位于漏极端 源区（S）。

公开(公告)号：US07238949B2

公开(公告)日：2007-07-03

申请号：US10509320

申请日：2003-03-27

申请人： Lothar Struder ,  Gerhard Lutz ,  Rainer Richter

发明人： Lothar Struder ,  Gerhard Lutz ,  Rainer Richter

IPC分类号： G01T1/20 ,  H01L27/10

CPC分类号： H01L31/115 ,  G01T1/2928 ,  H01L27/14603 ,  H01L31/02002 ,  H01L31/022408 ,  H01L31/03529 ,  Y02E10/50

摘要： The invention relates to a conductor crossover for a semiconductor detector, particularly for a drift detector for conducting X-ray spectroscopy. The conductor crossover comprises at least two doped semiconductor electrodes (2), which are placed inside a semiconductor substrate (1), at least one connecting conductor (M), which is guided over the semiconductor electrodes (2), and a first insulating layer (Ox). An intermediate electrode (L) is situated between the connecting conductor (M) and the first insulation layer (Ox). Said intermediate electrode overlaps the area of the semiconductor substrate (1) between the semiconductor electrodes (2) and is electrically insulated from the connecting conductor (M) by at least one additional insulation layer (I). The invention also relates to a drift detector equipped with a conductor crossover of this type and to a detector arrangement for conducting X-ray spectroscopy.

摘要翻译： 本发明涉及用于半导体检测器的导体交叉，特别是用于进行X射线光谱的漂移检测器。 导体交叉包括放置在半导体衬底（1）内的至少两个掺杂半导体电极（2），被引导到半导体电极（2）上的至少一个连接导体（M）和第一绝缘层 （牛）。 中间电极（L）位于连接导体（M）和第一绝缘层（Ox）之间。 所述中间电极与半导体电极（2）之间的半导体衬底（1）的区域重叠，并且通过至少一个附加绝缘层（I）与连接导体（M）电绝缘。 本发明还涉及一种配备有这种类型的导体交叉的漂移检测器和用于进行X射线光谱的检测器装置。

公开(公告)号：US20050258449A1

公开(公告)日：2005-11-24

申请号：US11127660

申请日：2005-05-10

申请人： Gerhard Lutz ,  Rainer Richter ,  Lothar Struder

发明人： Gerhard Lutz ,  Rainer Richter ,  Lothar Struder

IPC分类号： H01L31/0328 ,  H01L31/107

CPC分类号： H01L31/107

摘要： The invention relates to an avalanche radiation detector comprising a semiconductor substrate (HK) with a front side (VS) and a back side (RS), an avalanche region (AB) which is arranged in the semiconductor substrate (HK) on the front side (VS) of the semiconductor substrate (HK) and a control electrode (R) for adjusting the electric field strength in the avalanche region (AB). It is proposed that the control electrode (R) is also arranged on the front side of the semiconductor substrate (HK).

摘要翻译： 本发明涉及一种雪崩辐射检测器，其包括具有前侧（VS）和背面（RS）的半导体衬底（HK），布置在前侧的半导体衬底（HK）中的雪崩区域 （HK）的控制电极（VS）和用于调整雪崩区域（AB）中的电场强度的控制电极（R）。 提出控制电极（R）也布置在半导体衬底（HK）的前侧。

公开(公告)号：US20050173733A1

公开(公告)日：2005-08-11

申请号：US10509320

申请日：2003-03-27

申请人： Lothar Struder ,  Gerhard Lutz ,  Rainer Richter

发明人： Lothar Struder ,  Gerhard Lutz ,  Rainer Richter

IPC分类号： H01L20060101 ,  H01L27/10 ,  H01L27/146 ,  H01L31/02 ,  H01L31/0224 ,  H01L31/0352 ,  H01L31/115

CPC分类号： H01L31/115 ,  G01T1/2928 ,  H01L27/14603 ,  H01L31/02002 ,  H01L31/022408 ,  H01L31/03529 ,  Y02E10/50

摘要： The invention relates to a conductor crossover for a semiconductor detector, particularly for a drift detector for conducting X-ray spectroscopy. The conductor crossover comprises at least two doped semiconductor electrodes (2), which are placed inside a semiconductor substrate (1), at least one connecting conductor (M), which is guided over the semiconductor electrodes (2), and a first insulating layer (Ox). An intermediate electrode (L) is situated between the connecting conductor (M) and the first insulation layer (Ox). Said intermediate electrode overlaps the area of the semiconductor substrate (1) between the semiconductor electrodes (2) and is electrically insulated from the connecting conductor (M) by at least one additional insulation layer (I). The invention also relates to a drift detector equipped with a conductor crossover of this type and to a detector arrangement for conducting X-ray spectroscopy.

摘要翻译： 本发明涉及用于半导体检测器的导体交叉，特别是用于进行X射线光谱的漂移检测器。 导体交叉包括放置在半导体衬底（1）内的至少两个掺杂半导体电极（2），被引导到半导体电极（2）上的至少一个连接导体（M）和第一绝缘层 （牛）。 中间电极（L）位于连接导体（M）与第一绝缘层（Ox）之间。 所述中间电极与半导体电极（2）之间的半导体衬底（1）的区域重叠，并且通过至少一个附加绝缘层（I）与连接导体（M）电绝缘。 本发明还涉及一种配备有这种类型的导体交叉的漂移检测器和用于进行X射线光谱的检测器装置。

公开(公告)号：US07098519B2

公开(公告)日：2006-08-29

申请号：US11127660

申请日：2005-05-10

申请人： Gerhard Lutz ,  Rainer H. Richter ,  Lothar Struder

发明人： Gerhard Lutz ,  Rainer H. Richter ,  Lothar Struder

IPC分类号： H01L31/107 ,  H01L29/80 ,  H01L31/0288 ,  H01L31/112

CPC分类号： H01L31/107

摘要： The invention relates to an avalanche radiation detector comprising a semiconductor substrate (HK) with a front side (VS) and a back side (RS), an avalanche region (AB) which is arranged in the semiconductor substrate (HK) on the front side (VS) of the semiconductor substrate (HK) and a control electrode (R) for adjusting the electric field strength in the avalanche region (AB). It is proposed that the control electrode (R) is also arranged on the front side of the semiconductor substrate (HK).

摘要翻译： 本发明涉及一种雪崩辐射检测器，其包括具有前侧（VS）和背面（RS）的半导体衬底（HK），布置在前侧的半导体衬底（HK）中的雪崩区域 （HK）的控制电极（VS）和用于调整雪崩区域（AB）中的电场强度的控制电极（R）。 提出控制电极（R）也布置在半导体衬底（HK）的前侧。