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公开(公告)号:US10224413B1
公开(公告)日:2019-03-05
申请号:US13361461
申请日:2012-01-30
IPC分类号: B82Y40/00 , H01L29/66 , H01L29/786 , H01L29/78
摘要: A radio-frequency (RF) carbon-nanotube (CNT) field effect transistor (FET) device. The device includes a source contact, a drain contact, semi-conducting CNTs positioned between the source and drain contacts, high-κ gate dielectric, and a local backgate positioned below the semi-conducting CNTs, in which the local backgate is capable of RF performance and is capable of being used in a backgate burnout process used to enhance the semiconducting to metallic tube ratio of the device.