-
公开(公告)号:US10224413B1
公开(公告)日:2019-03-05
申请号:US13361461
申请日:2012-01-30
IPC分类号: B82Y40/00 , H01L29/66 , H01L29/786 , H01L29/78
摘要: A radio-frequency (RF) carbon-nanotube (CNT) field effect transistor (FET) device. The device includes a source contact, a drain contact, semi-conducting CNTs positioned between the source and drain contacts, high-κ gate dielectric, and a local backgate positioned below the semi-conducting CNTs, in which the local backgate is capable of RF performance and is capable of being used in a backgate burnout process used to enhance the semiconducting to metallic tube ratio of the device.
-
公开(公告)号:US20240297651A1
公开(公告)日:2024-09-05
申请号:US18177299
申请日:2023-03-02
CPC分类号: H03L7/06 , G06N10/40 , H03K3/0315 , H03K17/92
摘要: One example includes a superconducting circuit chip. The chip includes superconducting circuitry that operates based on a clock signal. The chip also includes a ring oscillator configured to receive a synchronization signal from a ring oscillator associated with another superconducting circuit chip. The ring oscillator is also configured to provide a trigger signal to the superconducting circuitry at a given phase of the clock signal relative to a phase of the clock signal of a trigger signal associated with the other one of the superconducting circuit chips based on the synchronization signal.
-