公开(公告)号：US20050035514A1

公开(公告)日：2005-02-17

申请号：US10639224

申请日：2003-08-11

申请人： Joseph Hillman ,  Dennis Conci

发明人： Joseph Hillman ,  Dennis Conci

IPC分类号： B25B11/00 ,  H01L21/683 ,  B23Q7/00

CPC分类号： H01L21/6838 ,  B25B11/005 ,  Y10T29/49998

摘要： Method and apparatus for holding a wafer having a wafer dimension during processing, the vacuum chuck comprising a concave wafer platen configured force the wafer into intimate contact with the wafer platen and provide a seal therebetween when high pressure is applied to the wafer. The wafer platen for preventing matter from entering between the wafer and vacuum chuck. A groove configured in the wafer platen applies vacuum to the underside of the wafer. A plenum configured in the platen provides pressure for a predetermined amount of time between the wafer and the vacuum chuck to disengage the wafer.

摘要翻译： 用于在处理期间保持具有晶片尺寸的晶片的方法和装置，包括凹晶片压板的真空吸盘构造成迫使晶片与晶片压板紧密接触并且当将高压施加到晶片时在其间提供密封。 用于防止物质进入晶片和真空卡盘之间的晶圆台板。 构造在晶片压板中的凹槽对晶片的下侧施加真空。 配置在压板中的气室在晶片和真空吸盘之间提供预定时间的压力以使晶片脱离。

公开(公告)号：US5702573A

公开(公告)日：1997-12-30

申请号：US592909

申请日：1996-01-29

申请人： Maximilian Biberger ,  Dennis Conci

发明人： Maximilian Biberger ,  Dennis Conci

IPC分类号： C23C14/35 ,  H01J37/34 ,  H01L21/203 ,  H01L21/285

CPC分类号： H01J37/3244 ,  C23C14/355 ,  H01J37/3408 ,  H01J37/3447 ,  H01J37/3494 ,  H01L21/2855

摘要： A method and apparatus are provided which increase the collimation of sputter deposited films by increasing the mean free path (MFP) of sputtered atoms so as to reduce redirecting collisions with the buffer gas. This is accomplished by reducing buffer gas pressure while employing mechanisms to maintain or increase plasma electron density so as to sustain the plasma in the absence of normally required gas pressure. A first mechanism used to permit reduced gas pressure is to provide gas flow directly to the immediate region of the plasma discharge rather than to another remote area of the sputter deposition chamber. A second mechanism used to permit reduced gas pressure is to provide an electron emitting source near the plasma discharge to increase the plasma electron density without requiring further ionization of buffer gas atoms. These two mechanisms can be used either alone or together, as desired, in view of the circumstances presented.

摘要翻译： 提供了一种方法和装置，其通过增加溅射原子的平均自由程（MFP）来增加溅射沉积膜的准直，从而减少与缓冲气体的重定向碰撞。 这是通过减少缓冲气体压力来实现的，同时采用机制来维持或增加等离子体电子密度，以便在没有通常需要的气体压力的情况下维持等离子体。 用于允许减小气体压力的第一机制是将气体流直接提供给等离子体放电的直接区域，而不是溅射沉积室的另一个远程区域。 用于允许降低气体压力的第二种机制是在等离子体放电附近提供电子发射源，以增加等离子体电子密度，而不需要进一步离子化缓冲气体原子。 鉴于所呈现的情况，这两种机制可以单独使用或一起使用。