Memory Device and Method for Its Operation

    公开(公告)号:US20220005524A1

    公开(公告)日:2022-01-06

    申请号:US17293693

    申请日:2019-11-14

    IPC分类号: G11C11/44 H01L39/16 H01L45/00

    摘要: The invention describes a memory device which combines a switchable resistive element and a superconductor element electrically in parallel. The switchable resistive element comprises an active material, which is switchable between first and second values of electrical resistivity ρ1 and ρ2 at the same temperature, wherein ρ1 is different to ρ2. The superconductor element is operable so that at least part of the superconductor element is switchable from a superconducting state to a non-superconducting state. When the superconductor element is switched from the superconducting state to the non-superconducting state, a current injection is provided through the switchable resistive element capable of switching the switchable resistive element between said first and second values of electrical resistivity.