公开(公告)号：US06555878B2

公开(公告)日：2003-04-29

申请号：US10233764

申请日：2002-09-03

申请人： Jun Song ,  Guang ping Hua ,  Keng-Foo Lo

发明人： Jun Song ,  Guang ping Hua ,  Keng-Foo Lo

IPC分类号： H01L2362

CPC分类号： H01L27/0262 ,  H01L29/7436

摘要： Described is a MOS gate-controlled SCR (UGSCR) structure with a U-shaped gate (UMOS) for an ESD protection circuit in an IC device which is compatible with shallow trench isolation (STI) and self-aligned silicide (salicide) fabrication technology. The UMOS gate is located in a p-substrate and is surrounded by an n-well on either side. Adjacent to one side of the UMOS gate, a first n+ diffusion is formed which straddles the first n-well. The n+ diffusion together with a p+ pickup diffused next to it form the cathode of the SCR (thyristor). Adjacent to the other side of the UMOS gate, a second n+ and p+ diffusion are formed in a second n-well. The second n+ and p+ diffusion together with the UMOS gate form the anode of the SCR and the input terminal of the circuit to be protected. The SCR is formed by the first n+ diffusion/n-well (cathode), the p-substrate, the second n-well and the second p+/n+ diffusion (anode). A latchup immune circuit is achieved by creating a U-shaped gate structure which is lined with a thick gate oxide—similar to a field oxide—under the poly gate.

摘要翻译： 描述了具有用于IC器件中的ESD保护电路的U形门（UMOS）的MOS栅极控制SCR（UGSCR）结构，其与浅沟槽隔离（STI）和自对准硅化物（自对准硅）制造技术相兼容 。 UMOS门位于p基板中，并且被两侧的n阱包围。 邻近UMOS门的一侧，形成跨越第一n阱的第一n +扩散。 n +扩散以及旁边扩散的p +拾取器形成SCR（晶闸管）的阴极。 在UMOS门的另一侧附近，在第二n阱中形成第二n +和p +扩散。 第二个n +和p +扩散与UMOS门一起形成SCR的阳极和要保护的电路的输入端。 SCR由第一n +扩散/ n阱（阴极），p衬底，第二n阱和第二p + / n +扩散（阳极）形成。 闭锁免疫电路通过在聚栅下形成一个衬有厚栅极氧化物（类似于场氧化物）的U形门结构来实现。