公开(公告)号：US06329253B1

公开(公告)日：2001-12-11

申请号：US09434922

申请日：1999-11-05

申请人： Jun Song ,  Yonqzang Zhang ,  Shyue Fong Quek ,  Ting Cheong Ang ,  Jun Cai ,  Puay Ing Ong

发明人： Jun Song ,  Yonqzang Zhang ,  Shyue Fong Quek ,  Ting Cheong Ang ,  Jun Cai ,  Puay Ing Ong

IPC分类号： H01L21336

CPC分类号： H01L29/66621 ,  H01L21/76224 ,  H01L27/0266 ,  H01L29/7834

摘要： A method for forming a novel thick oxide electrostatic discharge device using shallow trench isolation technology is described. A trench is etched into a semiconductor substrate. An oxide layer is deposited overlying the semiconductor substrate and filling the trench. The oxide within the trench is partially etched away leaving the oxide on the sidewalls and bottom of the trench. The oxide is polished away to the surface of the semiconductor substrate whereby oxide remains only on the sidewalls and bottom of the trench. A gate is formed within the trench whereby the gate is surrounded by the oxide. First ions are implanted into the semiconductor substrate adjacent to the trench to form N-wells. Second ions are implanted into the semiconductor substrate in a top portion of the N-wells to form source/drain regions. Third ions are implanted into the semiconductor substrate underlying the N-wells and underlying the trench to form electrostatic discharge trigger taps. This completes formation of an electrostatic discharge device in the fabrication of integrated circuits.

摘要翻译： 描述了使用浅沟槽隔离技术形成新的厚氧化物静电放电装置的方法。 将沟槽蚀刻到半导体衬底中。 沉积在半导体衬底上并填充沟槽的氧化物层。 部分地蚀刻沟槽内的氧化物，留下沟槽的侧壁和底部上的氧化物。 氧化物被抛光到半导体衬底的表面，由此氧化物仅保留在沟槽的侧壁和底部上。 在沟槽内形成栅极，由此栅极被氧化物包围。 将第一离子注入到与沟槽相邻的半导体衬底中以形成N阱。 在N阱的顶部将第二离子注入到半导体衬底中以形成源/漏区。 将第三离子注入位于N阱下方并位于沟槽下方的半导体衬底中以形成静电放电触发抽头。 这就形成了集成电路制造中的静电放电装置。