公开(公告)号：US5762704A

公开(公告)日：1998-06-09

申请号：US600803

申请日：1996-02-13

申请人： Jun-ichi Matsubara ,  Yuji Miyake ,  Hiroshi Kongoji ,  Kouji Maeda

发明人： Jun-ichi Matsubara ,  Yuji Miyake ,  Hiroshi Kongoji ,  Kouji Maeda

IPC分类号： C30B15/20 ,  C30B15/00 ,  C30B15/22 ,  C30B29/06 ,  H01L21/208 ,  H01L21/66 ,  C30B15/26

CPC分类号： B24B37/013 ,  C30B15/22 ,  C30B29/06 ,  H01L22/26 ,  H01L2924/0002

摘要： A silicon single-crystal ingot which is nearly uniform in quality over the entire length of the column portion can be obtained to produce high-quality single-crystal silicon with high product yield and has the bottom column portion having the property close to the properties of the top column portion and the middle column portion. The bottom portion does not vary in shape among product lots and can be reproduced in the same shape. The diameter D2 of the bottom portion 2 is controlled in such a manner that the outer surface of the bottom portion 2a on the column portion side has an inclination angle .theta. of 10 to 25 degrees with respect to the outer surface of the column portion 1 and extends to the outer surface of the column portion.

摘要翻译： 可以获得在柱部分的整个长度上质量接近均匀的硅单晶锭，以产生高产率的高品质单晶硅，并且具有接近于 顶柱部分和中间柱部分。 底部在产品批次之间的形状不变，并且可以以相同的形状再现。 底部2的直径D2被控制为使得柱部侧的底部2a的外表面相对于柱部1的外表面具有10至25度的倾斜角θ，以及 延伸到柱部分的外表面。