公开(公告)号：US20090269869A1

公开(公告)日：2009-10-29

申请号：US12458136

申请日：2009-07-01

申请人： June-o SONG ,  Tae-yeon SEONG ,  Kyoung-kook KIM ,  Hyun-gi HONG ,  Kwang-ki CHOI ,  Hyun-soo KIM

发明人： June-o SONG ,  Tae-yeon SEONG ,  Kyoung-kook KIM ,  Hyun-gi HONG ,  Kwang-ki CHOI ,  Hyun-soo KIM

IPC分类号： H01L33/00 ,  H01L21/283

CPC分类号： H01L33/405 ,  H01L33/32

摘要： Provided are a multiple reflection layer electrode, a compound semiconductor light emitting device having the same and methods of fabricating the same. The multiple reflection layer electrode may include a reflection layer on a p-type semiconductor layer, an APL (agglomeration protecting layer) on the reflection layer so as to prevent or retard agglomeration of the reflection layer, and a diffusion barrier between the reflection layer and the APL so as to retard diffusion of the APL.

摘要翻译： 提供了多反射层电极，具有该反射层电极的化合物半导体发光器件及其制造方法。 多反射层电极可以包括在p型半导体层上的反射层，反射层上的APL（聚集保护层），以防止或阻止反射层的聚集，并且反射层与 APL，以阻止APL的扩散。

公开(公告)号：US20090095976A1

公开(公告)日：2009-04-16

申请号：US12335845

申请日：2008-12-16

申请人： June-o SONG ,  Tae-yeon Seong

发明人： June-o SONG ,  Tae-yeon Seong

IPC分类号： H01L33/00

CPC分类号： H01L33/42 ,  H01L33/32

摘要： Provided are a nitride-based light-emitting device including a transparent electrode made of a transparent conductive oxide having a higher work function than indium tin oxide and a method of manufacturing the same. The nitride-based light-emitting device has a sequentially stacked structure of a substrate, an n-type clad layer, an active layer, a p-type clad layer, and an ohmic contact layer. The ohmic contact layer is formed as a film made of a transparent conductive oxide having a higher work function than indium tin oxide or as a film made of the transparent conductive oxide doped with a metal dopant. Therefore, ohmic contact characteristics with the p-type clad layer are enhanced, thereby ensuring excellent current-voltage characteristics. Furthermore, the high light transmittance of the transparent electrode can increase the emission efficiency of the device.

摘要翻译： 提供了一种氮化物系发光器件及其制造方法，该氮化物系发光器件包括由比氧化铟锡更高的功函数的透明导电氧化物制成的透明电极。 氮化物系发光器件具有基板，n型覆盖层，有源层，p型覆盖层和欧姆接触层的顺序层叠结构。 欧姆接触层形成为具有比铟锡氧化物更高的功函数的透明导电氧化物或由掺杂有金属掺杂剂的透明导电氧化物制成的膜制成的膜。 因此，与p型覆盖层的欧姆接触特性提高，从而确保优异的电流 - 电压特性。 此外，透明电极的高透光率可以提高器件的发光效率。