Abstract:
A semiconductor memory device includes a memory core and an input/output circuit. The memory core amplifies a signal of a memory cell to output the amplified signal through an input/output line pair in a read mode, receives a signal of the input/output line pair to store in the memory cell in a write mode, and electrically separates a bit line pair from the input/output line pair in response to a read column selection signal, a write column selection signal and a first data masking signal. The input/output circuit buffers and provided a signal of the input/output line pair to input/output pins, receives input data from the input/output pins, and buffers the received input data to provide the buffered input data to the input/output line pair. Thus, the semiconductor device can perform a fast data writing operation.
Abstract:
A speaker device and a portable terminal are provided. The speaker device includes a first sub-housing for receiving a speaker unit, and a second sub-housing assembled with the first sub-housing for fixing the speaker unit, in which the second sub-housing includes at least a pair of openings for outputting sound from the speaker unit, and the first sub-housing and the second sub-housing constitute a speaker housing. Since the speaker device for the portable terminal uses the speaker housing having a resonance structure, it is used as a woofer to reinforce bass sound. Furthermore, the speaker device constructs a 2.1 channel audio system along with other speaker devices installed in the portable terminal, thereby providing sound similar to the original sound when a user listens to music files or watches moving picture files or broadcasting programs such as DMB and TV.
Abstract:
A semiconductor memory device can include a first driver configured to generate a pair of first sense amplifier driving signals having an activation period at a predetermined level during command execution; and a second driver that can be configured to generate a pair of second sense amplifier driving signals for increasing a driving strength of a pair of sense amplifiers when logic values of a pair of bit lines are constant during the command execution and decreasing the driving strength of the pair of sense amplifiers when the logic values of the pair of bit lines change.
Abstract:
First and second active regions are doped with different types of impurities, and extend in a first direction and spaced apart from each other in a second direction. First and third gate structures, which are on the first active region and a first portion of the isolation layer between the first and second active regions, extend in the second direction and are spaced apart from each other in the first direction. Second and fourth gate structures, which are on the second active region and the first portion, extend in the second direction, are spaced apart from each other in the first direction, and face and are spaced apart from the first and third gate structures, respectively, in the second direction. First to fourth contacts are on portions of the first to fourth gate structures, respectively. The first and fourth contacts are connected, and the second and third contacts are connected.
Abstract:
At least one example embodiment discloses a semiconductor device. The semiconductor device includes a first sense amplifier selectively connected between a first bit line and a second bit line, a second sense amplifier selectively connected between the first bit line and the second bit line, a first power supply circuit configured to provide a power supply voltage to the first sense amplifier in response to a first control signal, a second power supply circuit configured to provide a ground voltage to the second sense amplifier in response to a second control signal, and a switching circuit configured to selectively connect the first power supply circuit with the second power supply circuit in response to a third control signal.
Abstract:
A semiconductor memory device can include a first driver configured to generate a pair of first sense amplifier driving signals having an activation period at a predetermined level during command execution; and a second driver that can be configured to generate a pair of second sense amplifier driving signals for increasing a driving strength of a pair of sense amplifiers when logic values of a pair of bit lines are constant during the command execution and decreasing the driving strength of the pair of sense amplifiers when the logic values of the pair of bit lines change.
Abstract:
A semiconductor memory device includes a memory core and an input/output circuit. The memory core amplifies a signal of a memory cell to output the amplified signal through an input/output line pair in a read mode, receives a signal of the input/output line pair to store in the memory cell in a write mode, and electrically separates a bit line pair from the input/output line pair in response to a read column selection signal, a write column selection signal and a first data masking signal. The input/output circuit buffers and provided a signal of the input/output line pair to input/output pins, receives input data from the input/output pins, and buffers the received input data to provide the buffered input data to the input/output line pair. Thus, the semiconductor device can perform a fast data writing operation.
Abstract:
Disclosed herein is a wakeboard-only artificial pool system. The system includes an artificial pool. A model boat is installed at a front position in the artificial pool and is rotatably coupled at a lower end and both sides thereof to support members such that an inclination of the model boat can be adjusted and the adjusted angle can be maintained, while the model boat is supported during wakeboarding. A high-speed injection means produces a wake under the lower portion of the model boat as if water were colliding with the front of the operating model boat, and sprays water on the lower end of a bow of the model boat at high speed, thus creating a current on the surface of the artificial pool so as to help a user float on water. A circulation means circulates water fed into and discharged from the artificial pool. A wake size/shape adjusting means is mounted to the model boat and rotated by power generated when the model boat is operating, thus creating a water current and adjusting the size and shape of the wake. A wake attenuating means is mounted to the inner wall of the artificial pool, and attenuates waves generated when the wake produced during wakeboarding is reflected from a wall.
Abstract:
At least one example embodiment discloses a semiconductor device. The semiconductor device includes a first sense amplifier selectively connected between a first bit line and a second bit line, a second sense amplifier selectively connected between the first bit line and the second bit line, a first power supply circuit configured to provide a power supply voltage to the first sense amplifier in response to a first control signal, a second power supply circuit configured to provide a ground voltage to the second sense amplifier in response to a second control signal, and a switching circuit configured to selectively connect the first power supply circuit with the second power supply circuit in response to a third control signal.
Abstract:
A golf bag carrier includes a pivot adjusting unit, at least one strut pivotally coupled to the pivot adjusting unit and adjusted in an angle with respect to a ground by the pivot adjusting unit, at least one wheel coupled to a lower end of the strut to move the golf bag, a fixing plate to which the pivot adjusting unit having the strut and the wheel are fixed, a vertical bar that is fixedly installed on a central portion of the fixing plate, and a fixing unit that is installed on the golf bag to detachably fix the vertical bar on the golf bag.