公开(公告)号：US20140009815A1

公开(公告)日：2014-01-09

申请号：US14022487

申请日：2013-09-10

申请人： Jung-mok BAE ,  Hong-seok LEE ,  Hoon SONG ,  Yong-joo KWON ,  Jung-hoon LEE ,  Seung-yul CHOI

发明人： Jung-mok BAE ,  Hong-seok LEE ,  Hoon SONG ,  Yong-joo KWON ,  Jung-hoon LEE ,  Seung-yul CHOI

IPC分类号： G02B26/00

CPC分类号： G02B26/005 ,  G02B3/0056 ,  G02B3/14

摘要： A changeable liquid lens array and a method of manufacturing the same. The changeable liquid lens array includes a substrate, a plurality of partition walls arrayed on the substrate and having a fluid travel path, cells defined by the plurality of partition walls, a first fluid comprised in the cells, a second fluid arranged on the first fluid, a first electrode arranged on at least one side surface of each of the partition walls, and a second electrode disposed to be separate from the partition walls. A shape of shape of an interface between the first fluid and the second fluid changes based on a voltage that is applied to the first electrode and the second electrode.

摘要翻译： 一种可变液晶透镜阵列及其制造方法。 可变液体透镜阵列包括基板，排列在基板上并具有流体行进路径的多个分隔壁，由多个分隔壁限定的单元，包含在单元中的第一流体，布置在第一流体上的第二流体 ，布置在每个分隔壁的至少一个侧表面上的第一电极和设置成与分隔壁分离的第二电极。 基于施加到第一电极和第二电极的电压，第一流体和第二流体之间的界面形状的形状发生变化。

公开(公告)号：US20120178233A1

公开(公告)日：2012-07-12

申请号：US13425807

申请日：2012-03-21

申请人： Jin-gyoo YOO ,  Cheol-soon KIM ,  Jung-hoon LEE

发明人： Jin-gyoo YOO ,  Cheol-soon KIM ,  Jung-hoon LEE

IPC分类号： H01L21/02 ,  B82Y40/00

CPC分类号： G11C13/025 ,  B82Y10/00 ,  G11C2213/16 ,  H01L51/0048 ,  Y10S977/943

摘要： A nanowire memory device and a method of manufacturing the same are provided. A memory device includes: a substrate; a first electrode formed on the substrate; a first nanowire extending from an end of the first electrode; a second electrode formed over the first electrode to overlap the first electrode; and a second nanowire extending from an end of the second electrode corresponding to the end of the first electrode in the same direction as the first nanowire, wherein an insulating layer exists between the first and second electrodes.

摘要翻译： 提供了一种纳米线存储器件及其制造方法。 存储器件包括：衬底; 形成在所述基板上的第一电极; 从所述第一电极的端部延伸的第一纳米线; 形成在所述第一电极上以与所述第一电极重叠的第二电极; 以及从与第一电极的端部对应的第二电极的端部沿与第一纳米线相同的方向延伸的第二纳米线，其中在第一和第二电极之间存在绝缘层。