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公开(公告)号:US20150041899A1
公开(公告)日:2015-02-12
申请号:US14274861
申请日:2014-05-12
申请人: Junggil YANG , SANGSU KIM , TaeYong KWON , SUNG GI HUR
发明人: Junggil YANG , SANGSU KIM , TaeYong KWON , SUNG GI HUR
IPC分类号: H01L27/092
CPC分类号: H01L27/0924 , H01L21/30604 , H01L21/30612 , H01L21/823807 , H01L21/823821 , H01L27/0922 , H01L29/1054 , H01L29/42392
摘要: A semiconductor device includes a substrate including first and second regions, a first transistor provided on the first region to include a first channel region protruding from the substrate, and a second transistor provided on the second region to include a second channel region and a gate electrode extending between the substrate and the second channel region. The first channel region may include a lower semiconductor pattern containing a different material from the second channel region and an upper semiconductor pattern containing the same material as the second channel region.
摘要翻译: 半导体器件包括包括第一和第二区域的衬底,第一晶体管,设置在第一区域上,以包括从衬底突出的第一沟道区域;以及第二晶体管,设置在第二区域上以包括第二沟道区域和栅电极 在衬底和第二沟道区之间延伸。 第一沟道区可以包括含有与第二沟道区不同的材料的下半导体图案和包含与第二沟道区相同的材料的上半导体图案。