公开(公告)号：US20150041899A1

公开(公告)日：2015-02-12

申请号：US14274861

申请日：2014-05-12

申请人： Junggil YANG ,  SANGSU KIM ,  TaeYong KWON ,  SUNG GI HUR

发明人： Junggil YANG ,  SANGSU KIM ,  TaeYong KWON ,  SUNG GI HUR

IPC分类号： H01L27/092

CPC分类号： H01L27/0924 ,  H01L21/30604 ,  H01L21/30612 ,  H01L21/823807 ,  H01L21/823821 ,  H01L27/0922 ,  H01L29/1054 ,  H01L29/42392

摘要： A semiconductor device includes a substrate including first and second regions, a first transistor provided on the first region to include a first channel region protruding from the substrate, and a second transistor provided on the second region to include a second channel region and a gate electrode extending between the substrate and the second channel region. The first channel region may include a lower semiconductor pattern containing a different material from the second channel region and an upper semiconductor pattern containing the same material as the second channel region.

摘要翻译： 半导体器件包括包括第一和第二区域的衬底，第一晶体管，设置在第一区域上，以包括从衬底突出的第一沟道区域;以及第二晶体管，设置在第二区域上以包括第二沟道区域和栅电极 在衬底和第二沟道区之间延伸。 第一沟道区可以包括含有与第二沟道区不同的材料的下半导体图案和包含与第二沟道区相同的材料的上半导体图案。

公开(公告)号：US20150249087A1

公开(公告)日：2015-09-03

申请号：US14547190

申请日：2014-11-19

申请人： MIRCO CANTORO ,  TAEYONG KWON ,  SANGSU KIM ,  JAE-HWAN LEE

发明人： MIRCO CANTORO ,  TAEYONG KWON ,  SANGSU KIM ,  JAE-HWAN LEE

IPC分类号： H01L27/092 ,  H01L29/20 ,  H01L29/16 ,  H01L27/088 ,  H01L29/36

CPC分类号： H01L27/0924 ,  H01L21/823431 ,  H01L21/823821 ,  H01L21/845 ,  H01L27/0886 ,  H01L29/16 ,  H01L29/20 ,  H01L29/36

摘要： A semiconductor device includes a substrate, an insulating layer disposed on the substrate and having a trench exposing a surface portion of the substrate, and a channel-forming structure comprising crystalline semiconductor material. The channel-forming structure has a lower portion located in the trench and fins extending upright on the lower portion, where the fins are spaced from each other and are each narrower than an opening of the trench, and the lower portion of the channel forming structure has a higher crystal defect density than the fins of the channel forming structure.

摘要翻译： 半导体器件包括衬底，设置在衬底上并具有暴露衬底的表面部分的沟槽的绝缘层以及包含晶体半导体材料的沟道形成结构。 通道形成结构具有位于沟槽中的下部，并且在下部直立延伸的翅片，其中翅片彼此间隔开并且比沟槽的开口窄，并且通道形成结构的下部 具有比通道形成结构的翅片更高的晶体缺陷密度。