公开(公告)号：US20080104893A1

公开(公告)日：2008-05-08

申请号：US11877984

申请日：2007-10-24

申请人： Junhui OH

发明人： Junhui OH

IPC分类号： H01L21/304

CPC分类号： C09G1/02 ,  C09K3/1463 ,  H01L21/31053

摘要： To provide a polishing composition suitable for use to polish a silicon dioxide film, particularly for use to polish a silicon dioxide film formed on a silicon substrate or a polysilicon film, and a polishing method by means of such a polishing composition. The polishing composition of the present invention comprises a colloidal silica having a degree of association of more than 1, and an acid, and has a pH of from 1 to 4. The acid is preferably at least one member selected from the group consisting of a carboxylic acid and a sulfonic acid. This polishing composition preferably further contains an anionic surfactant. The anionic surfactant is preferably a sulfuric acid ester or a sulfonate.

摘要翻译： 提供适用于抛光二氧化硅膜的抛光组合物，特别是用于抛光形成在硅衬底或多晶硅膜上的二氧化硅膜，以及通过这种抛光组合物的抛光方法。 本发明的研磨用组合物含有大于1的结合度的胶体二氧化硅和酸，其pH为1〜4。酸优选为选自下述的至少一种： 羧酸和磺酸。 该抛光组合物优选还含有阴离子表面活性剂。 阴离子表面活性剂优选为硫酸酯或磺酸盐。