公开(公告)号：US20080081384A1

公开(公告)日：2008-04-03

申请号：US11845543

申请日：2007-08-27

申请人： Junji OH ,  Masanori TERAHARA

发明人： Junji OH ,  Masanori TERAHARA

IPC分类号： H01L21/76 ,  G06F19/00 ,  H01L21/66

CPC分类号： H01L21/823878 ,  H01L21/76224 ,  H01L22/12 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor device fabrication method is disclosed. The method comprises an insulating film forming step of forming an insulating film on a semiconductor substrate; a trench forming step of forming a trench for device isolation in a predetermined part of the semiconductor substrate; a trench filling step of forming a buried oxide film filling the trench; a polishing step of polishing the buried oxide film on the semiconductor substrate until the insulating film is exposed; a thickness measuring step of measuring the thickness of the insulating film remaining after the polishing; an etching amount determining step of determining an etching amount of etching the polished buried oxide film based on the measured thickness of the remaining insulating film; and a buried oxide film etching step of etching the polished buried oxide film based on the determined etching amount.

摘要翻译： 公开了一种半导体器件制造方法。 该方法包括在半导体衬底上形成绝缘膜的绝缘膜形成步骤; 在半导体衬底的预定部分中形成用于器件隔离的沟槽的沟槽形成步骤; 沟槽填充步骤，形成填充所述沟槽的掩埋氧化膜; 抛光步骤，在所述半导体衬底上抛光所述掩埋氧化膜，直到所述绝缘膜露出; 测量抛光后残留的绝缘膜的厚度的厚度测量步骤; 蚀刻量确定步骤，基于所测量的剩余绝缘膜的厚度来确定蚀刻所述抛光的掩埋氧化膜的蚀刻量; 以及基于所确定的蚀刻量蚀刻抛光的掩埋氧化膜的掩埋氧化物膜蚀刻步骤。