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    METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE WHICH A PLURALITY OF TYPES OF TRANSISTORS ARE MOUNTED
    3.
    发明申请
    METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE WHICH A PLURALITY OF TYPES OF TRANSISTORS ARE MOUNTED 审中-公开
    制造多晶硅晶体管的半导体器件的制造方法

    公开(公告)号：US20120001265A1

    公开(公告)日：2012-01-05

    申请号：US13232402

    申请日：2011-09-14

    申请人： Masanori TERAHARA ,  Masaki Nakagawa

    发明人： Masanori TERAHARA ,  Masaki Nakagawa

    IPC分类号： H01L29/78

    CPC分类号： H01L21/76237 ,  H01L21/823814 ,  H01L21/823857 ,  H01L21/823878

    摘要： A method of manufacturing a semiconductor device includes the steps of forming a trench on a semiconductor substrate to define a first and a second element regions; burying a first oxide film in the trench; forming a second oxide film on surfaces of the first and second element regions; performing a first ion doping using a first mask which is exposing a first region containing the first element region and a part of the first oxide; performing a second ion doping using a second mask which is exposing a second region containing the second element region and a part of the first oxide film; and removing the second oxide film formed in the first element region and the second element region by etching, and the first oxide film is selectively thinned using the first or second mask after performing the first or second ion doping.

    摘要翻译： 制造半导体器件的方法包括以下步骤：在半导体衬底上形成沟槽以限定第一和第二元件区域; 在沟槽中埋设第一氧化膜; 在所述第一和第二元件区域的表面上形成第二氧化物膜; 使用第一掩模进行第一离子掺杂，所述第一掩模暴露含有所述第一元素区域的第一区域和所述第一氧化物的一部分; 使用暴露含有第二元素区域的第二区域和第一氧化物膜的一部分的第二掩模进行第二离子掺杂; 以及通过蚀刻去除在第一元件区域和第二元件区域中形成的第二氧化物膜，并且在执行第一或第二离子掺杂之后，使用第一或第二掩模来选择性地减薄第一氧化物膜。

    Method for manufacturing semiconductor device
    4.
    发明授权
    Method for manufacturing semiconductor device 有权
    制造半导体器件的方法

    公开(公告)号：US08043917B2

    公开(公告)日：2011-10-25

    申请号：US12468265

    申请日：2009-05-19

    申请人： Takayuki Wada ,  Masanori Terahara ,  Junji Oh

    发明人： Takayuki Wada ,  Masanori Terahara ,  Junji Oh

    IPC分类号： H01L21/762

    CPC分类号： H01L21/76224 ,  H01L29/6659 ,  H01L29/7833

    摘要： A method for manufacturing a semiconductor device includes forming a silicon substrate having first and second surfaces, the silicon substrate including no oxide film or an oxide film having a thickness no greater than 100 nm, forming a first oxide film at least on the second surface of the silicon substrate, forming a first film by covering at least the first surface, forming a mask pattern on the first surface by patterning the first film, forming a device separating region on the first surface by using the mask pattern as a mask, forming a gate insulating film on the first surface, forming a gate electrode on the first surface via the gate insulating film, forming a source and a drain one on each side of the gate electrode, and forming a wiring layer on the silicon substrate while maintaining the first oxide film on the second surface.

    摘要翻译： 一种制造半导体器件的方法包括：形成具有第一表面和第二表面的硅衬底，所述硅衬底不包括氧化膜或厚度不大于100nm的氧化物膜，至少在第二表面上形成第一氧化膜 所述硅衬底通过至少覆盖所述第一表面形成第一膜，通过使所述第一膜图案化​​而在所述第一表面上形成掩模图案，通过使用所述掩模图案作为掩模在所述第一表面上形成器件分离区域，形成 在所述第一表面上形成栅极绝缘膜，经由所述栅极绝缘膜在所述第一表面上形成栅电极，在所述栅电极的每一侧上形成源极和漏极，以及在所述硅衬底上形成布线层，同时保持所述第一 氧化膜在第二表面上。

    Manufacturing method of semiconductor device
    5.
    发明授权
    Manufacturing method of semiconductor device 有权
    半导体器件的制造方法

    公开(公告)号：US07541120B2

    公开(公告)日：2009-06-02

    申请号：US11066050

    申请日：2005-02-28

    申请人： Masanori Terahara

    发明人： Masanori Terahara

    IPC分类号： G03C5/00 ,  G03F9/00

    CPC分类号： G03F1/44 ,  G03F9/7003 ,  G03F9/7076

    摘要： After forming a resist film on a Si substrate, a circuit pattern for a semiconductor integrated circuit, a first L-shaped length measuring pattern and a cross-shaped monitor pattern for alignment are formed on the resist film. Next, based on these patterns, the Si substrate is patterned. Thereafter, a polysilicon film is formed above the Si substrate. Subsequently, a resist film is formed on the polysilicon film. Next, a circuit pattern for a semiconductor integrated circuit, a second L-shaped length measuring pattern and a cross-shaped monitor pattern for alignment are formed on the resist film. At this time, the second L-shaped length measuring pattern is made to face in a direction in which the first L-shaped length measuring pattern is rotated 180 degrees in plane view. By patterning the polysilicon film with these patterns as a mask, a gate electrode is formed.

    摘要翻译： 在Si衬底上形成抗蚀剂膜之后，在抗蚀剂膜上形成用于半导体集成电路的电路图案，第一L形长度测量图案和用于对准的十字形监视器图案。 接下来，基于这些图案，对Si衬底进行图案化。 此后，在Si衬底上形成多晶硅膜。 随后，在多晶硅膜上形成抗蚀剂膜。 接下来，在抗蚀剂膜上形成用于半导体集成电路的电路图案，第二L形长度测量图案和用于对准的十字形监视器图案。 此时，使第二L字形长度测量图案在第一L形长度测量图案在平面视图中旋转180度的方向上面对。 通过将这些图案的多晶硅膜图案化为掩模，形成栅电极。

    SEMICONDUCTOR DEVICE FABRICATION METHOD AND SEMICONDUCTOR DEVICE FABRICATION SYSTEM
    6.
    发明申请
    SEMICONDUCTOR DEVICE FABRICATION METHOD AND SEMICONDUCTOR DEVICE FABRICATION SYSTEM 有权
    半导体器件制造方法和半导体器件制造系统

    公开(公告)号：US20080081384A1

    公开(公告)日：2008-04-03

    申请号：US11845543

    申请日：2007-08-27

    申请人： Junji OH ,  Masanori TERAHARA

    发明人： Junji OH ,  Masanori TERAHARA

    IPC分类号： H01L21/76 ,  G06F19/00 ,  H01L21/66

    CPC分类号： H01L21/823878 ,  H01L21/76224 ,  H01L22/12 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A semiconductor device fabrication method is disclosed. The method comprises an insulating film forming step of forming an insulating film on a semiconductor substrate; a trench forming step of forming a trench for device isolation in a predetermined part of the semiconductor substrate; a trench filling step of forming a buried oxide film filling the trench; a polishing step of polishing the buried oxide film on the semiconductor substrate until the insulating film is exposed; a thickness measuring step of measuring the thickness of the insulating film remaining after the polishing; an etching amount determining step of determining an etching amount of etching the polished buried oxide film based on the measured thickness of the remaining insulating film; and a buried oxide film etching step of etching the polished buried oxide film based on the determined etching amount.

    摘要翻译： 公开了一种半导体器件制造方法。 该方法包括在半导体衬底上形成绝缘膜的绝缘膜形成步骤; 在半导体衬底的预定部分中形成用于器件隔离的沟槽的沟槽形成步骤; 沟槽填充步骤，形成填充所述沟槽的掩埋氧化膜; 抛光步骤，在所述半导体衬底上抛光所述掩埋氧化膜，直到所述绝缘膜露出; 测量抛光后残留的绝缘膜的厚度的厚度测量步骤; 蚀刻量确定步骤，基于所测量的剩余绝缘膜的厚度来确定蚀刻所述抛光的掩埋氧化膜的蚀刻量; 以及基于所确定的蚀刻量蚀刻抛光的掩埋氧化膜的掩埋氧化物膜蚀刻步骤。

    Manufacturing method of semiconductor device
    7.
    发明申请
    Manufacturing method of semiconductor device 有权

    公开(公告)号：US20060093963A1

    公开(公告)日：2006-05-04

    申请号：US11066050

    申请日：2005-02-28

    申请人： Masanori Terahara

    发明人： Masanori Terahara

    IPC分类号： G03F7/00

    CPC分类号： G03F1/44 ,  G03F9/7003 ,  G03F9/7076

    摘要： After forming a resist film on a Si substrate, a circuit pattern for a semiconductor integrated circuit, a first L-shaped length measuring pattern and a cross-shaped monitor pattern for alignment are formed on the resist film. Next, based on these patterns, the Si substrate is patterned. Thereafter, a polysilicon film is formed above the Si substrate. Subsequently, a resist film is formed on the polysilicon film. Next, a circuit pattern for a semiconductor integrated circuit, a second L-shaped length measuring pattern and a cross-shaped monitor pattern for alignment are formed on the resist film. At this time, the second L-shaped length measuring pattern is made to face in a direction in which the first L-shaped length measuring pattern is rotated 180 degrees in plane view. By patterning the polysilicon film with these patterns as a mask, a gate electrode is formed.

    Method for manufacturing semiconductor device
    8.
    发明授权
    Method for manufacturing semiconductor device 有权
    制造半导体器件的方法

    公开(公告)号：US08273630B2

    公开(公告)日：2012-09-25

    申请号：US13238336

    申请日：2011-09-21

    申请人： Takayuki Wada ,  Masanori Terahara ,  Junji Oh

    发明人： Takayuki Wada ,  Masanori Terahara ,  Junji Oh

    IPC分类号： H01L21/761

    CPC分类号： H01L21/76224 ,  H01L29/6659 ,  H01L29/7833

    摘要： A method for manufacturing a semiconductor device includes forming a silicon substrate having first and second surfaces, the silicon substrate including no oxide film or an oxide film having a thickness no greater than 100 nm, forming a first oxide film at least on the second surface of the silicon substrate, forming a first film by covering at least the first surface, forming a mask pattern on the first surface by patterning the first film, forming a device separating region on the first surface by using the mask pattern as a mask, forming a gate insulating film on the first surface, forming a gate electrode on the first surface via the gate insulating film, forming a source and a drain one on each side of the gate electrode, and forming a wiring layer on the silicon substrate while maintaining the first oxide film on the second surface.

    摘要翻译： 一种制造半导体器件的方法包括：形成具有第一表面和第二表面的硅衬底，所述硅衬底不包括氧化膜或厚度不大于100nm的氧化物膜，至少在第二表面上形成第一氧化膜 所述硅衬底通过至少覆盖所述第一表面形成第一膜，通过使所述第一膜图案化​​而在所述第一表面上形成掩模图案，通过使用所述掩模图案作为掩模在所述第一表面上形成器件分离区域，形成 在所述第一表面上形成栅极绝缘膜，经由所述栅极绝缘膜在所述第一表面上形成栅电极，在所述栅电极的每一侧上形成源极和漏极，以及在所述硅衬底上形成布线层，同时保持所述第一 氧化膜在第二表面上。

    Semiconductor device and method of manufacturing a semiconductor device
    9.
    发明授权
    Semiconductor device and method of manufacturing a semiconductor device 有权
    半导体装置及其制造方法

    公开(公告)号：US08193048B2

    公开(公告)日：2012-06-05

    申请号：US12061367

    申请日：2008-04-02

    申请人： Masato Miyamoto ,  Masanori Terahara

    发明人： Masato Miyamoto ,  Masanori Terahara

    IPC分类号： H01L21/8238

    CPC分类号： H01L21/76232

    摘要： A semiconductor device formed in a semiconductor substrate wherein the semiconductor substrate has a trench for isolating elements from each other, the trench has unevenness at the bottom thereof, and an insulator is buried in the trench.

    摘要翻译： 半导体器件形成在半导体衬底中，其中半导体衬底具有用于彼此隔离元件的沟槽，沟槽在其底部具有不均匀性，并且绝缘体被埋在沟槽中。