摘要:
The present invention provides an Ag alloy film which exhibits a low-level electrical resistivity nearly equivalent to that of a pure Ag film and which is superior to a conventional Ag alloy film in durability (specifically, resistances to salt water and halogen) and in the adhesion to a substrate. Further, the deposition rate of this Ag alloy film by sputtering is as high as that of a pure Ag film. Provided is an Ag alloy film useful as a reflecting film and/or a transmitting film or as an electrical wiring and/or an electrode, including 0.1 to 1.5 atomic % of at least one element selected from Pd, Au and Pt, and 0.02 to 1.5 atomic % of at least one element selected from at least one rare earth element, Bi and Zn with the balance being Ag and inevitable impurities.
摘要:
Provided is a Cu alloy interconnection film for touch-panel sensors, which excels in oxidation resistance and adhesion properties, and is low in electrical resistance. The interconnection film contains at least one alloy element selected from a group consisting of Ni, Zn, and Mn by 0.1 to 40 atom % in total, and the remainder contains Cu and inevitable impurities. Alternatively, the interconnection film is made of a Cu alloy containing at least one element selected from the group consisting of Ni, Zn, and Mn. In this case, if the Cu alloy contains one element, Ni is contained by 0.1 to 6 atom %, or Zn is contained by 0.1 to 6 atom %, or Mn is contained by 0.1 to 1.9 atom %. On the other hand, if two or more alloy elements are contained, the alloy elements are contained by 0.1 to 6 atom % in total (wherein, Mn is contained by [((6−x)×2)/6] atom % or less if Mn is contained; here, x is a total adding amount of Ni and Zn).