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公开(公告)号：US10483964B2
公开(公告)日：2019-11-19
申请号：US16183209
申请日：2018-11-07
发明人： Natsuki Arakawa , Junichi Matsubara , Satoki Uruno , Kengo Shima , Daisuke Aoki , Yuichiro Mori
IPC分类号： H03K17/56
摘要： A signal processing device includes an input terminal configured to be input with an input signal that is active high or an input signal that is active low, a switching terminal connectable to a power supply or ground, a selection circuit configured to select and output the input signal that is active high in a case that the switching terminal is connected to the power supply and select and output the input signal that is active low in a case that the switching terminal is connected to the ground.
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公开(公告)号：US10593662B2
公开(公告)日：2020-03-17
申请号：US15915522
申请日：2018-03-08
发明人： Narumasa Soejima , Takashi Suzuki , Kengo Shima , Yosuke Kanie , Kazuya Adachi
IPC分类号： H01L23/60 , H01L27/02 , H01L23/64 , H01L23/62 , H01L49/02 , H02H9/04 , H01L29/74 , H01L29/866
摘要： A protection device includes a semiconductor substrate including a protection element; an insulating layer covering a surface of the semiconductor substrate; a conductive layer disposed in the insulating layer, and extending in a plane that is parallel with the surface of the semiconductor substrate; a passive element formed with an elongated conductor, curved in a plane that is parallel with the conductive layer, and located over the conductive layer; and an input terminal, an output terminal, and a ground terminal exposed in a surface of the insulating layer. One end of the passive element is electrically connected to the input terminal, the other end of the passive element and a high-potential-side terminal of the protection element are electrically connected to the output terminal, and a low-potential-side terminal of the protection element and the conductive layer are electrically connected to the ground terminal.
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公开(公告)号：US11009899B2
公开(公告)日：2021-05-18
申请号：US15777832
申请日：2016-08-23
发明人： Kengo Shima , Daisuke Aoki , Satoki Uruno , Junichi Matsubara
IPC分类号： G05F1/56 , G05F3/26 , H05B45/10 , H05B45/37 , H05B45/395 , B60R16/033
摘要： A semiconductor integrated circuit includes a constant-voltage circuit that outputs a constant voltage and a constant-current circuit. The constant-current circuit includes a first transistor. A voltage input as an input voltage to a first gate electrode of the first transistor is equal to the node voltage at an intermediate node in a connection path between the output of the constant-voltage circuit and an external resistor. A source region of the first transistor is connected to a fixed power supply, and a drain region of the first transistor is connected to the external power supply via a load. In the first transistor, a constant current can be made to flow between the source region and the drain region based on the input voltage. A constant-current drive system in which the semiconductor integrated circuit and the external resistor have been mounted on a circuit board is also constructed.
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公开(公告)号：US10177138B2
公开(公告)日：2019-01-08
申请号：US15882432
申请日：2018-01-29
发明人： Takashi Suzuki , Narumasa Soejima , Yosuke Kanie , Kengo Shima
摘要： A semiconductor device used in a protection circuit including a thyristor and an LCR circuit which includes a coil L, a capacitor C and a resistor R, the semiconductor device may include: a semiconductor layer in which the thyristor is provided; an insulating film provided on the semiconductor layer; and a pair of electrodes provided on the insulating film and connected to a protection target circuit, wherein at least one of the coil L, the capacitor C and the resistor R is provided in the insulating film, and the at least one of the coil L, the capacitor C and the resistor R is connected to an anode of the thyristor by a first metal wire filling a first hole provided in the insulating film.
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