公开(公告)号：US20170062285A1

公开(公告)日：2017-03-02

申请号：US14956944

申请日：2015-12-02

Applicant: KABUSHIKI KAISHA TOSHIBA

Inventor： TAKAYUKI ITO ,  YASUNORI OSHIMA ,  TOSHIHIKO IINUMA

IPC: H01L21/66 ,  H01J37/317 ,  H01L21/265

CPC classification number: H01L22/26 ,  H01J37/244 ,  H01J37/3171 ,  H01J2237/24405 ,  H01J2237/24528 ,  H01J2237/24542 ,  H01J2237/31703 ,  H01L21/26513 ,  H01L22/14

Abstract: An ion implantation apparatus includes an implantation part, a measuring part, and a controller. The ion implantation part implants ions into an implantation region located at a bottom of a concave portion provided on a semiconductor substrate. The measuring part measures an implantation amount of ions corresponding to an aspect ratio of the concave portion based on ions implanted from the implantation part thereinto, at a first position at which the semiconductor substrate is arranged when the ions are implanted into the implantation region or a second position close to the first position. The controller controls the implantation part to stop implantation of the ions into the measuring part when an accumulated amount of the implantation amount has reached a predetermined amount according to a target accumulation amount of the implantation region.

Abstract translation: 离子注入装置包括注入部件，测量部件和控制器。 离子注入部将离子注入位于设置在半导体基板上的凹部的底部的注入区域中。 所述测量部件在离子注入到所述注入区域中时，基于从所述注入部分注入的离子，在配置所述半导体衬底的第一位置处测量与所述凹部的纵横比对应的离子的注入量，或者 第二名接近第一名。 当植入量的累积量根据植入区域的目标堆积量达到预定量时，控制器控制注入部分停止将离子注入测量部分。