公开(公告)号：US20150076540A1

公开(公告)日：2015-03-19

申请号：US14192773

申请日：2014-02-27

Applicant: KABUSHIKI KAISHA TOSHIBA

Inventor： Yoko MOTOJIMA ,  Akira TANAKA

IPC: H01L33/50 ,  H01L33/48

CPC classification number: H01L33/505 ,  H01L33/483

Abstract: A nitride semiconductor light emitting device includes a laminate body, a first electrode, a second electrode, and a phosphor layer having a light emitting surface. The laminate body includes a first layer of a first-conductivity-type, a first part of a second layer of a second-conductivity-type, and a light emitting layer containing a nitride semiconductor between the first layer and the second layer. The first electrode is formed on a surface of the first layer. The second electrode is formed on a surface of a second part of the second layer that is formed between the laminate body and the phosphor layer. At least one of the laminate body, the second part of the second layer, and the phosphor layer has a lateral width that increase toward the light emitting surface.

Abstract translation: 氮化物半导体发光器件包括层压体，第一电极，第二电极和具有发光表面的荧光体层。 层压体包括第一导电类型的第一层，第二导电类型的第二层的第一部分和在第一层和第二层之间包含氮化物半导体的发光层。 第一电极形成在第一层的表面上。 第二电极形成在形成在层叠体和荧光体层之间的第二层的第二部分的表面上。 层压体中的至少一个，第二层的第二部分和荧光体层具有朝向发光表面增加的横向宽度。