公开(公告)号：US08787077B2

公开(公告)日：2014-07-22

申请号：US13845478

申请日：2013-03-18

申请人： Kabushiki Kaisha Toshiba

发明人： Daisuke Saida ,  Naoharu Shimomura ,  Minoru Amano ,  Eiji Kitagawa ,  Yoshishige Suzuki

IPC分类号： G11C11/02

CPC分类号： G11C11/161 ,  G11C11/1675

摘要： According to one embodiment, a nonvolatile memory device includes a memory unit and a control unit. The memory unit includes a magnetic memory element which includes: a first and second ferromagnetic layers; and a first nonmagnetic layer provided between the first and the second ferromagnetic layers. The memory unit includes a magnetic field application unit configured to apply a magnetic field to the second ferromagnetic layer, the magnetic field having a component in a first in-plane direction perpendicular to a stacking direction. The control unit is electrically connected to the magnetic memory element, and is configured to implement a setting operation of changing a voltage between the first and the second ferromagnetic layers from a first set voltage to a second set voltage. The magnetic field applied by the magnetic field application unit satisfies the condition of Δ ⁢ ⁢ H > ( H u + H dx ) ⁢ ( H u + H dx - H ext ) ( H u + H dx + H ext ) . ( 1 )

摘要翻译： 根据一个实施例，非易失性存储器件包括存储器单元和控制单元。 存储单元包括磁存储元件，其包括：第一和第二铁磁层; 以及设置在第一和第二铁磁层之间的第一非磁性层。 存储单元包括：磁场施加单元，被配置为向第二铁磁层施加磁场，该磁场具有垂直于堆叠方向的第一平面内方向的分量。 控制单元电连接到磁存储元件，并且被配置为实现将第一和第二铁磁层之间的电压从第一设定电压改变到第二设定电压的设置操作。 由磁场施加单元施加的磁场满足＆Dgr的条件; H H（H u + H dx）（H u + H dx-H ext）（H u + H dx + H ext）。 （1）

公开(公告)号：US20140085969A1

公开(公告)日：2014-03-27

申请号：US13845478

申请日：2013-03-18

申请人： KABUSHIKI KAISHA TOSHIBA

发明人： Daisuke SAIDA ,  Naoharu Shimomura ,  Minoru Amano ,  Eiji Kitagawa ,  Yoshishige Suzuki

IPC分类号： G11C11/16

CPC分类号： G11C11/161 ,  G11C11/1675

摘要： According to one embodiment, a nonvolatile memory device includes a memory unit and a control unit. The memory unit includes a magnetic memory element which includes: a first and second ferromagnetic layers; and a first nonmagnetic layer provided between the first and the second ferromagnetic layers. The memory unit includes a magnetic field application unit configured to apply a magnetic field to the second ferromagnetic layer, the magnetic field having a component in a first in-plane direction perpendicular to a stacking direction. The control unit is electrically connected to the magnetic memory element, and is configured to implement a setting operation of changing a voltage between the first and the second ferromagnetic layers from a first set voltage to a second set voltage. The magnetic field applied by the magnetic field application unit satisfies the condition of Δ   H > ( H u + H dx )  ( H u + H dx - H ext ) ( H u + H dx + H ext ) . ( 1 )

摘要翻译： 根据一个实施例，非易失性存储器件包括存储器单元和控制单元。 存储单元包括磁存储元件，其包括：第一和第二铁磁层; 以及设置在第一和第二铁磁层之间的第一非磁性层。 存储单元包括：磁场施加单元，被配置为向第二铁磁层施加磁场，该磁场具有垂直于堆叠方向的第一平面内方向的分量。 控制单元电连接到磁存储元件，并且被配置为实现将第一和第二铁磁层之间的电压从第一设定电压改变到第二设定电压的设置操作。 由磁场施加单元施加的磁场满足＆Dgr的条件; H H（H u + H dx）（H u + H dx-H ext）（H u + H dx + H ext）。 （1）