公开(公告)号：US20140103196A1

公开(公告)日：2014-04-17

申请号：US14054114

申请日：2013-10-15

Applicant: KABUSHIKI KAISHA TOYOTA CHUO KENKYUSHO

Inventor： Mineki SOGA ,  Cristiano NICLASS

IPC: H01L27/144

CPC classification number: H01L27/144 ,  G01S7/4865 ,  H01L31/02019 ,  H01L31/107

Abstract: There is provided a light detector having a light-receiving unit including a light-receiving element of a photon-counting type that receives incident light and outputs a binary pulse indicating presence or absence of photon incidence, and an integrating unit that calculates an output value in which a total of pulse widths of pulses is integrated over a measurement period.

Abstract translation: 提供一种光检测器，其具有光接收单元，该光接收单元包括接收入射光的光子计数型光接收元件，并输出指示存在或不存在光子入射的二进制脉冲;以及积分单元，其计算输出值 其中在测量周期内积分脉冲的总脉冲宽度。

公开(公告)号：US20150054111A1

公开(公告)日：2015-02-26

申请号：US14465340

申请日：2014-08-21

Applicant: KABUSHIKI KAISHA TOYOTA CHUO KENKYUSHO

Inventor： Cristiano NICLASS ,  Mineki SOGA

IPC: H01L31/107 ,  H01L27/146

CPC classification number: H01L31/107 ,  H01L27/1446

Abstract: A first semiconductor layer serves as a first implanted layer of a first conductivity type. A second semiconductor layer of a second conductivity type is provided under the first semiconductor layer. The second conductivity type is opposite to the first conductivity type. The second semiconductor layer is buried in an epitaxial layer grown above a substrate. The second semiconductor layer becomes fully depleted when an appropriate bias voltage is applied to the device.

Abstract translation: 第一半导体层用作第一导电类型的第一注入层。 第二导电类型的第二半导体层设置在第一半导体层的下方。 第二导电类型与第一导电类型相反。 第二半导体层被埋在在衬底上生长的外延层中。 当适当的偏置电压施加到器件时，第二半导体层变得完全耗尽。