公开(公告)号：US12087871B2

公开(公告)日：2024-09-10

申请号：US18385213

申请日：2023-10-30

Applicant: W&W Sens Devices, Inc.

Inventor： Shih-Yuan Wang ,  Shih-Ping Wang

IPC: H01L31/0236 ,  G02B6/122 ,  G02B6/136 ,  H01L23/66 ,  H01L31/02 ,  H01L31/0224 ,  H01L31/0232 ,  H01L31/024 ,  H01L31/028 ,  H01L31/0304 ,  H01L31/0312 ,  H01L31/0352 ,  H01L31/036 ,  H01L31/054 ,  H01L31/0745 ,  H01L31/075 ,  H01L31/077 ,  H01L31/105 ,  H01L31/107 ,  H01L31/18 ,  G02B6/12

CPC classification number: H01L31/035272 ,  G02B6/122 ,  G02B6/136 ,  H01L23/66 ,  H01L31/02005 ,  H01L31/02016 ,  H01L31/02019 ,  H01L31/022408 ,  H01L31/022475 ,  H01L31/02327 ,  H01L31/02363 ,  H01L31/024 ,  H01L31/028 ,  H01L31/0284 ,  H01L31/0304 ,  H01L31/03046 ,  H01L31/0312 ,  H01L31/035209 ,  H01L31/035227 ,  H01L31/035281 ,  H01L31/036 ,  H01L31/054 ,  H01L31/0745 ,  H01L31/075 ,  H01L31/077 ,  H01L31/105 ,  H01L31/1055 ,  H01L31/107 ,  H01L31/1075 ,  H01L31/1804 ,  H01L31/1808 ,  H01L31/1812 ,  H01L31/184 ,  H01L31/1844 ,  G02B2006/12097 ,  G02B2006/12176 ,  H01L2223/6627 ,  Y02E10/52 ,  Y02E10/548

Abstract: Techniques for enhancing the absorption of photons in semiconductors with the use of microstructures are described. The microstructures, such as pillars and/or holes, effectively increase the effective absorption length resulting in a greater absorption of the photons. Using microstructures for absorption enhancement for silicon photodiodes and silicon avalanche photodiodes can result in bandwidths in excess of 10 Gb/s at photons with wavelengths of 850 nm, and with quantum efficiencies of approximately 90% or more.

公开(公告)号：US20240186442A1

公开(公告)日：2024-06-06

申请号：US18026350

申请日：2022-10-12

Applicant: SUZHOU YIXIAN ELECTRONIC TECHNOLOGY CO., LTD.

Inventor： Wei LEI ,  Jianming ZHOU ,  Ying ZHU

IPC: H01L31/115 ,  G01T7/00 ,  H01L31/02 ,  H01L31/032

CPC classification number: H01L31/115 ,  G01T7/005 ,  H01L31/02019 ,  H01L31/032

Abstract: A γ ray detector structure based on a p-i-n junction of perovskite and a calibration method are provided. An ultrathick intrinsic perovskite crystal grows by utilizing temperature inversion solution crystallization as a γ ray photon absorber, a p-type perovskite epitaxial layer grows on one side of the intrinsic perovskite crystal by adopting an epitaxial doping growing method, a n-type perovskite epitaxial layer grows on the other side, a dark state current and noise are inhibited by utilizing the p-i-n junction of perovskite, and a large-sized perovskite crystal is used to absorb and convert more γ photons. Detected signals at a cathode terminal and an anode terminal are measured simultaneously. The longitudinal interaction depths of the γ photons are calibrated according to the ratio of the two signals, and then detection events at the same depth are classified and counted respectively.

公开(公告)号：US20240113236A1

公开(公告)日：2024-04-04

申请号：US18453283

申请日：2023-08-21

Applicant: Innolux Corporation

Inventor： I-AN YAO ,  Yu-Tsung Liu

IPC: H01L31/02 ,  H01L31/0216 ,  H01L31/18

CPC classification number: H01L31/02005 ,  H01L31/02019 ,  H01L31/02164 ,  H01L31/186

Abstract: A sensing device including a substrate, a circuit layer, and a plurality of sensing units is provided. The circuit layer is disposed on the substrate and includes a plurality of driving circuits. The plurality of sensing units are disposed on the circuit layer, and each of the sensing units includes a supporting part and a sensing part. The supporting part is electrically connected to one of the plurality of driving circuits. The sensing part is electrically connected to the supporting part, and the sensing part is separated from a first cavity by the supporting part and the circuit layer. In a normal direction of the substrate, at least a portion of the supporting part is disposed between the circuit layer and the sensing part.

公开(公告)号：US11943527B2

公开(公告)日：2024-03-26

申请号：US18311297

申请日：2023-05-03

Applicant: CANON KABUSHIKI KAISHA

Inventor： Yosuke Nishide ,  Yu Maehashi ,  Masahiro Kobayashi ,  Katsuyuki Hoshino ,  Akira Okita ,  Takeshi Ichikawa

IPC: H04N23/57 ,  G06F1/16 ,  G09F9/30 ,  H01L27/14 ,  H01L27/144 ,  H01L27/146 ,  H01L27/15 ,  H01L31/02 ,  H01L31/0216 ,  H01L31/10 ,  H01L31/147 ,  H04N23/56 ,  H04N25/70 ,  H05B33/02 ,  H05B33/12 ,  H05B33/14 ,  H10K50/00 ,  H10K59/00

CPC classification number: H04N23/57 ,  G06F1/163 ,  G09F9/30 ,  H01L27/14 ,  H01L27/144 ,  H01L27/146 ,  H01L27/15 ,  H01L31/02019 ,  H01L31/02164 ,  H01L31/10 ,  H01L31/147 ,  H04N23/56 ,  H04N25/70 ,  H05B33/02 ,  H05B33/12 ,  H05B33/14 ,  H10K50/00 ,  H10K59/00

Abstract: An image capturing and display apparatus comprises a plurality of photoelectric conversion elements for converting incident light from the outside of the image capturing and display apparatus to electrical charge signals, and a plurality of light-emitting elements for emitting light of an intensity corresponding to the electrical charge signals acquired by the plurality of photoelectric conversion elements. A pixel region is defined as a region in which the plurality of photoelectric conversion elements are arranged in an array. Signal paths for transmitting signals from the plurality of photoelectric conversion elements to the plurality of light-emitting elements lie within the pixel region.

公开(公告)号：US11937004B2

公开(公告)日：2024-03-19

申请号：US16751099

申请日：2020-01-23

Applicant: CANON KABUSHIKI KAISHA

Inventor： Kazuhiro Morimoto

IPC: H04N5/378 ,  H01L27/146 ,  H01L31/02 ,  H01L31/107 ,  H04N25/75

CPC classification number: H04N25/75 ,  H01L27/14634 ,  H01L31/02019 ,  H01L31/107

Abstract: A photoelectric conversion apparatus includes a photodiode, a generation circuit, a first control circuit, and a second control circuit. The photodiode is configured to perform avalanche multiplication. The generation circuit is configured to generate a control signal. The first control circuit is configured to be controlled by the control signal to be in a standby state where the avalanche multiplication by the photodiode is possible and in a recharging state for returning the photodiode having performed the avalanche multiplication to the standby state. The second control circuit is configured to count a number of periods in which the avalanche multiplication has occurred among a plurality of periods of the standby state by using the control signal and a signal corresponding to an output of the photodiode.

公开(公告)号：US11894474B2

公开(公告)日：2024-02-06

申请号：US16562889

申请日：2019-09-06

Applicant: Intel Corporation

Inventor： Priyanka Dobriyal ,  Ankur Agrawal ,  Susheel Jadhav ,  Quan Tran ,  Raghuram Narayan ,  Raiyomand Aspandiar ,  Kenneth Brown ,  John Heck

IPC: H01L31/02 ,  H01L31/0232 ,  G02B3/00 ,  H01L31/0216 ,  H01L25/16 ,  H01L31/18 ,  G02B1/11 ,  G02B6/42 ,  H01L23/538 ,  G02B6/24

CPC classification number: H01L31/02327 ,  G02B1/11 ,  G02B3/0012 ,  G02B3/0056 ,  G02B6/428 ,  H01L23/5385 ,  H01L25/167 ,  H01L31/02005 ,  H01L31/02019 ,  H01L31/02161 ,  H01L31/1876 ,  G02B6/241

Abstract: Embodiments disclosed herein include optoelectronic systems and methods of forming such systems. In an embodiment the optoelectronic system comprises a board, and a carrier attached to the board. In an embodiment, a first die is on the carrier. In an embodiment, the first die is a photonics die, and a surface of the first die is covered by an optically transparent layer.

公开(公告)号：US20230417675A1

公开(公告)日：2023-12-28

申请号：US18464624

申请日：2023-09-11

Applicant: Illumina, Inc.

Inventor： Xiuyu CAI ,  Joseph Francis PINTO ,  Thomas A. BAKER ,  Tracy Helen FUNG

IPC: G01N21/64 ,  B01L3/00 ,  G01J1/44 ,  G01N33/58 ,  G02B6/42 ,  H01L27/144 ,  H01L27/146 ,  H01L31/02 ,  H01L31/0216 ,  H01L31/0232

CPC classification number: G01N21/6428 ,  B01L3/502715 ,  B01L3/5085 ,  B01L3/50853 ,  G01J1/44 ,  G01N21/6454 ,  G01N33/582 ,  G02B6/4214 ,  H01L27/1446 ,  H01L27/14609 ,  H01L27/14623 ,  H01L27/14629 ,  H01L31/02019 ,  H01L31/02164 ,  H01L31/02165 ,  H01L31/02327 ,  G01N21/05

Abstract: Light detection devices and related methods are provided. The devices may comprise a reaction structure for containing a reaction solution with a relatively high or low pH and a plurality of reaction sites that generate light emissions. The devices may comprise a device base comprising a plurality of light sensors, device circuitry coupled to the light sensors, and a plurality of light guides that block excitation light but permit the light emissions to pass to a light sensor. The device base may also include a shield layer extending about each light guide between each light guide and the device circuitry, and a protection layer that is chemically inert with respect to the reaction solution extending about each light guide between each light guide and the shield layer. The protection layer prevents reaction solution that passes through the reaction structure and the light guide from interacting with the device circuitry.

公开(公告)号：US20230261132A1

公开(公告)日：2023-08-17

申请号：US18139715

申请日：2023-04-26

Applicant: Lumileds LLC

Inventor： Charles André Schrama ,  Noman Rangwala

IPC: H01L31/173 ,  H02M7/00 ,  H01L31/024 ,  H01L31/02

CPC classification number: H01L31/173 ,  H02M7/003 ,  H01L31/024 ,  H01L31/02019

Abstract: An electrical power converter can include a plurality of layers disposed on a substrate. An emitter, including a first semiconductor junction that is formed at an interface between a first pair of adjacent layers, can produce light in response to a first electrical signal. An absorber, including a second semiconductor junction that is formed at an interface between a second pair of adjacent layers, can absorb at least some of the light. Circuitry can produce a second electrical signal in response to the absorbed light. The second electrical signal can be substantially proportional to the first electrical signal and can be electrically isolated from the first electrical signal. Because the light can remain within the layers during use, the electrical power converter can have a higher efficiency than a comparable device that propagates the light through at least one interface between air and a semiconductor material.

公开(公告)号：US20190198709A1

公开(公告)日：2019-06-27

申请号：US16228211

申请日：2018-12-20

Applicant: Lumileds LLC

Inventor： Isaac Harshman Wildeson ,  Parijat Pramil Deb ,  Robert Armitage

IPC: H01L33/06 ,  H01L33/00 ,  H01L33/32 ,  H01L33/62 ,  H01L33/50 ,  H01L27/15

CPC classification number: H01L27/153 ,  H01L27/156 ,  H01L31/02019 ,  H01L31/02327 ,  H01L31/167 ,  H01L33/007 ,  H01L33/0075 ,  H01L33/06 ,  H01L33/08 ,  H01L33/32 ,  H01L33/38 ,  H01L33/50 ,  H01L33/62 ,  H01L2933/0016 ,  H04B10/116 ,  H04B10/572 ,  H05B33/086 ,  H05B37/0272

Abstract: A device may include a first light emitting diode (LED) on a first surface of a substrate, a first tunnel junction on the first LED a first semiconductor layer on the first tunnel junction, and a conformal dielectric layer on at least a sidewall of the LED and the first surface of the substrate.

公开(公告)号：US20190035748A1

公开(公告)日：2019-01-31

申请号：US16138971

申请日：2018-09-22

Applicant: International Business Machines Corporation

Inventor： Ali Afzali-Ardakani ,  Joel P. de Souza ,  Bahman Hekmatshoartabari ,  Daniel M. Kuchta ,  Devendra K. Sadana

IPC: H01L23/00 ,  H01L31/20 ,  H01L31/14 ,  H01L31/112 ,  H01L31/0376 ,  H01L31/024 ,  H01L31/0224 ,  H01L21/762 ,  H01L31/0203 ,  H01L31/02 ,  H01L31/0216 ,  H01L27/144 ,  H01L29/49

CPC classification number: H01L23/573 ,  H01L21/762 ,  H01L23/576 ,  H01L27/144 ,  H01L29/4916 ,  H01L31/02019 ,  H01L31/0203 ,  H01L31/02161 ,  H01L31/022408 ,  H01L31/024 ,  H01L31/03762 ,  H01L31/1129 ,  H01L31/143 ,  H01L31/202

Abstract: Silicon-based or other electronic circuitry is dissolved or otherwise disabled by reactive materials within a semiconductor chip should the chip or a device containing the chip be subjected to tampering. Triggering circuits containing normally-OFF heterojunction field-effect photo-transistors are configured to cause reactions of the reactive materials within the chips upon exposure to light. The normally-OFF heterojunction field-effect photo-transistors can be fabricated during back-end-of-line processing through the use of polysilicon channel material, amorphous hydrogenated silicon gate contacts, hydrogenated crystalline silicon source/drain contacts, or other materials that allow processing at low temperatures.