公开(公告)号：US20230402297A1

公开(公告)日：2023-12-14

申请号：US18131099

申请日：2023-04-05

Applicant: KCTECH CO., LTD.

Inventor： Hyung Chul KIM ,  You Sun JUNG ,  Dong Min KIM

IPC: H01L21/67 ,  H01L21/687

CPC classification number: H01L21/67034 ,  H01L21/68785

Abstract: A substrate processing apparatus is disclosed. The substrate processing apparatus includes a chamber having a processing space in which substrate processing is performed therein, one or more exhaust lines connected to the chamber and configured to discharge a processing fluid from the processing space to an outside of the chamber, a supporting chuck disposed in the processing space, configured to support the substrate from below so that the substrate is disposed on an upper portion of the supporting chuck, and having an inner space configured to accommodate a first processing fluid, and one or more first supply lines configured to receive the first processing fluid from the outside of the chamber and transfer the first processing fluid to the inner space of the supporting chuck. In addition, various embodiments may be possible.