公开(公告)号：US20120229794A1

公开(公告)日：2012-09-13

申请号：US13046722

申请日：2011-03-12

Applicant: KEN ROBERTS

Inventor： KEN ROBERTS

IPC: G01B11/16

CPC classification number: G01B11/16 ,  G01B11/165 ,  G01L1/24 ,  G01L1/241

Abstract: A system for measuring thin film stress (anisotropic or isotropic), such as from thin film deposition onto semiconductor substrates found in semiconductor manufacturing. The system uses resettled volume difference (V2−V1) of the surface of a material to calculate stress. The system includes A) A means to collect 3D surface point positions of a body by reflecting an image or light from the material surface into a sensor. B) A method to calculate volume from 3D surface points. C) A method to calculate thin film stress from resettled volume difference (V2−V1). D) A 3D Integrated Magnification Environment (3D-IME) to analyze 3D models of a body with a single axis (the height axis) magnified in an effort to observe the effects of stress on the body, before and after stress is applied, such as from film deposition). Calculating stress from resettled volume difference (V2−V1) eliminates the inaccuracy of calculating stress from the change in surface curvature or radius ( 1 R 2 - 1 R 1 ) , caused by the non-spherical deformation of anisotropic materials, such as semiconductor substrates (eg: silicon wafers) in semiconductor manufacturing.

Abstract translation: 用于测量薄膜应力（各向异性或各向同性）的系统，例如从在半导体制造中发现的半导体衬底上的薄膜沉积。 该系统使用材料表面的安置体积差（V2-V1）来计算应力。 该系统包括A）通过将图像或光从材料表面反射到传感器中来收集身体的3D表面点位置的方法。 B）从3D表面点计算体积的方法。 C）从安置体积差（V2-V1）计算薄膜应力的方法。 D）用于分析具有单轴（高度轴）的身体的3D模型的3D集成放大环境（3D-IME）被放大，以便在施加应力之前和之后观察应力对身体的影响，例如 从膜沉积）。 计算应力从安置的体积差（V2-V1）消除了由各向异性材料（如半导体衬底）的非球形变形引起的表面曲率或半径（1 R 2 - 1 R 1）变化计算应力的不精确度 （例如：硅晶片）。