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公开(公告)号:US20220336597A1
公开(公告)日:2022-10-20
申请号:US17640886
申请日:2020-09-09
Inventor: Thomas D. ANTHOPOULOS , Kalaivanan LOGANATHAN , Emre YARALI , Emre YENGEL , Hendrik Andreas FABER
IPC: H01L29/41 , H01L29/06 , H01L29/786 , H01L21/283
Abstract: A method for manufacturing a solid state device with a self-forming nanogap includes patterning a first metallic layer (M1) to form a first electrode on a substrate; depositing a self-assembling monolayer, SAM, layer over and around the first electrode; forming a second metallic layer (M2) in contact with the SAM layer and the substrate; and touchlessly removing parts of the second metallic layer (M2) that is formed directly above the SAM layer, to form a second electrode, and a nanogap between the first electrode and the second electrode.
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公开(公告)号:US20220332570A1
公开(公告)日:2022-10-20
申请号:US17640890
申请日:2020-09-09
Inventor: Thomas D. ANTHOPOULOS , Kalaivanan LOGANATHAN , Ulrich BUTTNER , Emre YENGEL , Hendrik Andreas FABER
Abstract: A method for manufacturing a soft stamp includes providing a substrate having a first electrode and a second electrode, the second electrode being formed at a distance less than 100 nm from the first electrode so that a nanogap Ng is formed between the first and second electrodes; pouring a curable substance over the first and second electrodes and into the nanogap Ng; curing the curable substance to form a soft stamp; and removing the soft stamp from the first and second electrodes. The soft stamp has a nano-feature having a size less than 100 nm.
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